National Semiconductor LMV115 Technical data

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LMV115
GSM Baseband 30MHz 2.8V Oscillator Buffer

LMV115 GSM Baseband 30MHz 2.8V Oscillator Buffer

December 2003

General Description

The LMV115 is a 30MHz buffer specially designed to mini­mize the effects of spurious signals from the base band chip
to the oscillator. The buffer also minimizes the influence of
varying load resistance and capacitance to the oscillator and
increases the drive capability.

The input of the LMV115 is internally biased with two equal
resistors to the power supply rails. This allows AC coupling
on the input.

The LMV115 offers a shutdown function to optimize current
consumption. This shutdown function can also be used to
control the supply voltage of an external oscillator. The de­vice is in shutdown mode when the shutdown pin is con­nected to V

The LMV115 comes in SC70-6 package. This space saving
product reduces components, improves clock signal and
allows ease of placement for the best form factor.

.

DD

Schematic Diagram

Features

(Typical 2.8V supply; values unless otherwise specified)

n Low supply current: 0.3mA
n 2.5V to 3.3V supply
n AC coupling possible without external bias resistors.
n Includes shutdown function external oscillator
n SC70-6 pin package 2.1 x 2mm
n Operating Temperature Range −40˚C to 85˚C

Applications

n Cellular phones
n GSM Modules
n Oscillator Modules

20075129

© 2003 National Semiconductor Corporation DS200751 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

LMV115

please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

ESD Tolerance

Human Body Model 2000V (Note 2)

Machine Model 150V (Note 3)

Supply Voltage (V

Output Short Circuit to V

Output Short Circuit to V

+–V−

) 3.6V

+

−

(Note 4), (Note 5)

(Note 4), (Note 5)

Junction Temperature (Note 6) +150˚C

Mounting Temperature

Infrared or Convection (20 sec.) 235˚C

Operating Ratings (Note 1)

Supply Voltage (V

Temperature Range (Note 6), (Note 7) −40˚C to +85˚C

Package Thermal Resistance (Note 6), (Note 7)

SC70-6 414˚C/W

+–V−

) 2.5V to 3.3V

Storage Temperature Range −65˚C to +150˚C

2.8V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 2.8V, V−= 0V, VCM=V+/2, shutdown = 0.0V, and RL=
50kΩ to V

Symbol Parameter Conditions

SSBW Small Signal Bandwidth V

GFN Gain Flatness

FPBW Full Power Bandwidth (−3dB) V

Time Domain Response

t

r

t

f

t

s

OS Overshoot 0.1V

SR Slew Rate (Note 11) 18 V/µs

Distortion and Noise Performance

HD2 2

HD3 3

THD Total Harmonic Distortion V

e

n

Isolation Output to Input See also Typical Performance

Static DC Performance

A

CL

V

OS

TC V

R

OUT

PSRR Power Supply Rejection Ratio V

I

S

Miscellaneous Performance

R

IN

C

IN

+

/2, CL= 5pF to V+/2 and C

<

0.1dB f>50kHz 2.8 MHz

COUPLING

Rise Time 0.1V

= 1nF.Boldface limits apply at the temperature extremes.

Min

(Note 9)

<

0.5VPP; −3dB 31 MHz

OUT

= 1.0VPP(+4.5dBm) 9 MHz

OUT

(10-90%) 11

STEP

Typ

(Note 8)

Fall Time 11

Settling Time to 0.1% 0.1V

nd

Harmonic Distortion V

rd

Harmonic Distortion V

OUT

OUT

OUT

STEP

STEP

= 500mVPP; f = 100kHz −41 dBc

= 500mVPP; f = 100kHz −43 dBc

= 500mVPP; f = 100kHz −38 dBc

95 ns

24 %

Input-Referred Voltage Noise f = 1MHz 27 nV/

>

40 dB

Characteristics

Small Signal Voltage Gain V

Output Offset Voltage

Temperature Coefficient Output

OS

OUT

= 100mV

PP

0.90

0.85

0.998

3.5

(Note 12) 102 µV/˚C

Offset Voltage

Output Resistance f = 10kHz 61

f = 25MHz 330

+

= 2.8V to V+= 3.3V 41

38

42 dB

Supply Current No Load; Shutdown = 2.8V 0.0 2.00

No Load; Shutdown = 0V

314

Input Resistance Shutdown = 2.8V 65

Shutdown = 0V 64

Input Capacitance Shutdown = 2.8V 1.82

Shutdown = 0V 1.50

Max

(Note 9) Units

1.10

1.11

35

55

450

520

ns

V/V

mV

Ω

µA

kΩ

pF

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2.8V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 2.8V, V−= 0V, VCM=V+/2, shutdown = 0.0V, and RL=
50kΩ to V

Symbol Parameter Conditions

Z

IN

V

O

I

O

I

SC

R

ON

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human Body Model (HBM) is 1.5kΩ in series with 100pF.

Note 3: Machine Model, 0Ω in series with 200pF.

Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the

maximum allowed junction temperature of 150˚C

Note 5: Infinite Duration; Short circuit test is a momentary test. See next note.

Note 6: The maximum power dissipation is a function of T

P

D

Note 7: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
T

J

Note 8: Typical Values represent the most likely parametric norm.

Note 9: All limits are guaranteed by testing or statistical analysis.

Note 10: Positive current corresponds to current flowing into the device.

Note 11: Slew rate is the average of the positive and negative slew rate.

Note 12: Average Temperature Coefficient is determined by dividing the change in a parameter at temperature extremes by the total temperature change.

+

/2, CL= 5pF to V+/2 and C

COUPLING

= 1nF.Boldface limits apply at the temperature extremes.

(Note 9)

Input Impedance f = 25MHz; Shutdown = 2.8V 2.38

f = 25MHz; Shutdown = 0V 2.47

Output Swing Positive RL= 50kΩ to V+/2 1.90

Output Swing Negative RL= 50kΩ to V+/2

Linear Output Current No Load; V

=V+− 1.1V

OUT

(Sourcing)

No Load; V

=V−+ 1.1V

OUT

(Sinking)

Output Short-Circuit Current

No Load; Sourcing to V+/2 −90

(Note 5)

+

No Load; Sinking from V

/2 100

Switch in ON Position

, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is

=(T

J(MAX)-TA

>

TA. See Applications section for information on temperature de-rating of this device.

)/θJA. All numbers apply for packages soldered directly onto a PC board.

. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where

J=TA

J(MAX)

Min

1.65

−90

−35

100

50

−35

50

Typ

(Note 8)

2.16

1.05

−206

205

−186

191

21

Max

(Note 9) Units

1.35

1.30

40

45

LMV115

kΩ

V

µA

µA

Ω

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Connection Diagram

LMV115

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

SC70-6

SC70-6

Top View

LMV115MG

LMV115MGX 3k Units Tape and Reel

B04

20075130

250 Units Tape and Reel

MAA06A

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