National Semiconductor LMK02000 Technical data

LMK02000 Precision Clock Conditioner with Integrated PLL
LMK02000 Precision Clock Conditioner with Integrated PLL
September 2007

General Description

The LMK02000 precision clock conditioner combines the functions of jitter cleaning/reconditioning, multiplication, and distribution of a reference clock. The device integrates a high performance Integer-N Phase Locked Loop (PLL), three LVDS, and five LVPECL clock output distribution blocks.
Each clock distribution block includes a programmable di­vider, a phase synchronization circuit, a programmable delay, a clock output mux, and an LVDS or LVPECL output buffer. This allows multiple integer-related and phase-adjusted copies of the reference to be distributed to eight system com­ponents.
The clock conditioner comes in a 48-pin LLP package and is footprint compatible with other clocking devices in the same family.

Functional Block Diagram

Features

20 fs additive jitter
Integrated Integer-N PLL with outstanding normalized
phase noise contribution of -224 dBc/Hz Clock output frequency range of 1 to 800 MHz
3 LVDS and 5 LVPECL clock outputs
Dedicated divider and delay blocks on each clock output
Pin compatible family of clocking devices
3.15 to 3.45 V operation
Package: 48 pin LLP (7.0 x 7.0 x 0.8 mm)

Target Applications

Data Converter Clocking
Networking, SONET/SDH, DSLAM
Wireless Infrastructure
Medical
Test and Measurement
Military / Aerospace
TRI-STATE® is a registered trademark of National Semiconductor Corporation.
© 2007 National Semiconductor Corporation 202165 www.national.com
20216501

Connection Diagram

LMK02000
48-Pin LLP Package
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Pin Descriptions

Pin # Pin Name I/O Description
1, 25 GND - Ground
2, 7 NC - No Connection to these pins
3, 8, 13, 16, 19, 22, 26,
30, 31, 33, 37, 40, 43, 46
4 CLKuWire I MICROWIRE Clock Input
5 DATAuWire I MICROWIRE Data Input
6 LEuWire I MICROWIRE Latch Enable Input
9, 10 LDObyp1, LDObyp2 - LDO Bypass
11 GOE I Global Output Enable
12 LD O Lock Detect and Test Output
14, 15 CLKout0, CLKout0* O LVDS Clock Output 0
17, 18 CLKout1, CLKout1* O LVDS Clock Output 1
20, 21 CLKout2, CLKout2* O LVDS Clock Output 2
23, 24 CLKout3, CLKout3* O LVPECL Clock Output 3
27 SYNC* I Global Clock Output Synchronization
28, 29 OSCin, OSCin* I Oscillator Clock Input; Must be AC coupled
32 CPout O Charge Pump Output
34, 35 Fin, Fin* I Frequency Input; Must be AC coupled
36 Bias I Bias Bypass
38, 39 CLKout4, CLKout4* O LVPECL Clock Output 4
41, 42 CLKout5, CLKout5* O LVPECL Clock Output 5
44, 45 CLKout6, CLKout6* O LVPECL Clock Output 6
47, 48 CLKout7, CLKout7* O LVPECL Clock Output 7
DAP DAP - Die Attach Pad is Ground
Vcc1, Vcc2, Vcc3, Vcc4, Vcc5, Vcc6, Vcc7,
Vcc8, Vcc9, Vcc10, Vcc11, Vcc12, Vcc13, Vcc14
LMK02000
- Power Supply
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Absolute Maximum Ratings (Notes 1, 2)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
LMK02000
Parameter Symbol Ratings Units
Power Supply Voltage
Input Voltage
Storage Temperature Range
Lead Temperature (solder 4 s)
Junction Temperature
V
CC
V
IN
T
STG
T
L
T
J
-0.3 to 3.6 V
-0.3 to (VCC + 0.3)
-65 to 150 °C
+260 °C
125 °C

Recommended Operating Conditions

Parameter Symbol Min Typ Max Units
Ambient Temperature
Power Supply Voltage
Note 1: "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
Note 2: This device is a high performance integrated circuit with ESD handling precautions. Handling of this device should only be done at ESD protected work stations. The device is rated to a HBM-ESD of > 2 kV, a MM-ESD of > 200 V, and a CDM-ESD of > 1.2 kV.
T
A
V
CC
-40 25 85 °C
3.15 3.3 3.45 V

Package Thermal Resistance

V
Package
θ
JA
θ
J-PAD (Thermal Pad)
48-Lead LLP (Note 3) 27.4° C/W 5.8° C/W
Note 3: Specification assumes 16 thermal vias connect the die attach pad to the embedded copper plane on the 4-layer JEDEC board. These vias play a key role in improving the thermal performance of the LLP. It is recommended that the maximum number of vias be used in the board layout.

Electrical Characteristics (Note 4)

(3.15 V Vcc 3.45 V, -40 °C TA 85 °C, Differential Inputs/Outputs; except as specified. Typical values represent most likely parametric norms at Vcc = 3.3 V, TA = 25 °C, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed).
Symbol Parameter Conditions Min Typ Max Units
Current Consumption
I
CC
ICCPD
f
OSCin
V
OSCin
f
Fin
SLEW
DUTY
P
Fin
square
square
Fin
Fin
Entire device; CLKout0 & CLKout4 Power Supply Current (Note 5)
enabled in Bypass Mode
Entire device; All Outputs Off (no
emitter resistors placed)
Power Down Current POWERDOWN = 1 1 mA
Reference Oscillator
Reference Oscillator Input Frequency Range for Square Wave
Square Wave Input Voltage for OSCin and
AC coupled; Differential (VOD)
OSCin*
Frequency Input
Frequency Input Frequency Range 1 800 MHz
Frequency Input Slew Rate (Notes 6, 10) 0.5 V/ns
Frequency Input Duty Cycle 40 60 %
Input Power Range for Fin or Fin* AC coupled -13 8 dBm
145.8
70
1 200 MHz
0.2 1.6 Vpp
mA
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Symbol Parameter Conditions Min Typ Max Units
PLL
f
COMP
I
CPout
SRCE
I
CPout
SINK
I
TRI Charge Pump TRI-STATE® Current 0.5 V < V
CPout
I
%MIS
CPout
I
VTUNE
CPout
I
TEMP
CPout
PN10kHz
PN1Hz
Phase Detector Frequency 40 MHz
V
Charge Pump Source Current
Charge Pump Sink Current
Magnitude of Charge Pump Sink vs. Source Current Mismatch
Magnitude of Charge Pump Current vs. Charge Pump Voltage Variation
Magnitude of Charge Pump Current vs. Temperature Variation
PLL 1/f Noise at 10 kHz Offset (Note 7) Normalized to 1 GHz Output Frequency
Normalized Phase Noise Contribution (Note 8)
= Vcc/2, PLL_CP_GAIN = 1x
CPout
V
= Vcc/2, PLL_CP_GAIN = 4x
CPout
V
= Vcc/2, PLL_CP_GAIN = 16x
CPout
V
= Vcc/2, PLL_CP_GAIN = 32x
CPout
V
= Vcc/2, PLL_CP_GAIN = 1x
CPout
V
= Vcc/2, PLL_CP_GAIN = 4x
CPout
V
= Vcc/2, PLL_CP_GAIN = 16x
CPout
V
= Vcc/2, PLL_CP_GAIN = 32x
CPout
< Vcc - 0.5 V
CPout
V
= Vcc / 2
CPout
TA = 25°C
0.5 V < V
< Vcc - 0.5 V
CPout
TA = 25°C
4 %
PLL_CP_GAIN = 1x -117
PLL_CP_GAIN = 32x -122
PLL_CP_GAIN = 1x -219
PLL_CP_GAIN = 32x -224
100
400
1600
3200
-100
-400
-1600
-3200
2 10 nA
3 %
4 %
Clock Distribution Section (Note 9) - LVDS Clock Outputs (CLKout0 to CLKout2)
Jitter
ADD
Additive RMS Jitter (Note 9)
RL = 100 Ω Distribution Path = 800 MHz Bandwidth = 12 kHz to 20 MHz
CLKoutX_MUX = Bypass
CLKoutX_MUX = Divided CLKoutX_DIV = 4
20
75
Equal loading and identical clock
t
SKEW
CLKoutX to CLKoutY (Note 10)
configuration
-30 ±4 30 ps
RL = 100 Ω
V
ΔV
V
ΔV
I
SA
I
SB
I
SAB
OD
OD
OS
OS
Differential Output Voltage
Change in magnitude of VOD for complementary output states
Output Offset Voltage
Change in magnitude of VOS for complementary output states
Clock Output Short Circuit Current single ended
Clock Output Short Circuit Current differential
RL = 100 Ω
RL = 100 Ω
RL = 100 Ω
RL = 100 Ω
250 350 450 mV
-50 50 mV
1.070 1.25 1.370 V
-35 35 mV
Single ended outputs shorted to GND -24 24 mA
Complementary outputs tied together -12 12 mA
LMK02000
µA
μA
dBc/Hz
dBc/Hz
fs
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Symbol Parameter Conditions Min Typ Max Units
Clock Distribution Section (Note 9) - LVPECL Clock Outputs (CLKout3 to CLKout7)
LMK02000
Jitter
ADD
Additive RMS Jitter (Note 9)
RL = 100 Ω
Distribution Path =
800 MHz
Bandwidth =
12 kHz to 20 MHz
CLKoutX_MUX = Bypass
CLKoutX_MUX = Divided CLKoutX_DIV = 4
20
75
Equal loading and identical clock
t
SKEW
CLKoutX to CLKoutY (Note 10)
configuration
-30 ±3 30 ps
Termination = 50 Ω to Vcc - 2 V
V
OH
V
OL
V
OD
Output High Voltage
Output Low Voltage
Termination = 50 Ω to Vcc - 2 V
Differential Output Voltage 660 810 965 mV
Vcc -
0.98
Vcc -
1.8
Digital LVTTL Interfaces (Note 11)
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
High-Level Input Voltage 2.0 Vcc V
Low-Level Input Voltage 0.8 V
High-Level Input Current
Low-Level Input Current
High-Level Output Voltage
Low-Level Output Voltage
VIH = Vcc
VIL = 0
IOH = +500 µA
IOL = -500 µA
-5.0 5.0 µA
-40.0 5.0 µA
Vcc -
0.4
V
0.4 V
Digital MICROWIRE Interfaces (Note 12)
V
IH
V
IL
I
IH
I
IL
High-Level Input Voltage 1.6 Vcc V
Low-Level Input Voltage 0.4 V
High-Level Input Current
Low-Level Input Current
VIH = Vcc
VIL = 0
-5.0 5.0 µA
-5.0 5.0 µA
MICROWIRE Timing
t
CS
t
CH
t
CWH
t
CWL
t
ES
t
CES
t
EWH
Note 4: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 5: See 3.4 for more current consumption / power dissipation calculation information.
Note 6: For all frequencies the slew rate, SLEW
Note 7: A specification in modeling PLL in-band phase noise is the 1/f flicker noise, L
dB/decade slope. PN10kHz is normalized to a 10 kHz offset and a 1 GHz carrier frequency. PN10kHz = L (f) is the single side band phase noise of only the flicker noise's contribution to total noise, L(f). To measure L slope close to the carrier. A high phase detector frequency and a clean crystal are important to isolating this noise source from the total phase noise, L(f). L (f) can be masked by the reference oscillator performance if a low power or noisy source is used. The total PLL inband phase noise performance is the sum of L
PLL_flicker
Note 8: A specification in modeling PLL in-band phase noise is the Normalized Phase Noise Contribution, L L
PLL_flat
detector frequency of the synthesizer. L smaller then the loop bandwidth of the PLL, and yet large enough to avoid a substantial noise contribution from the reference and flicker noise. L masked by the reference oscillator performance if a low power or noisy source is used.
Note 9: The Clock Distribution Section includes all parts of the device except the PLL section. Typical Additive Jitter specifications apply to the clock distribution section only.
Note 10: Specification is guaranteed by characterization and is not tested in production.
Note 11: Applies to GOE, LD, and SYNC*.
Data to Clock Set Up Time See Data Input Timing 25 ns
Data to Clock Hold Time See Data Input Timing 8 ns
Clock Pulse Width High See Data Input Timing 25 ns
Clock Pulse Width Low See Data Input Timing 25 ns
Clock to Enable Set Up Time See Data Input Timing 25 ns
Enable to Clock Set Up Time See Data Input Timing 25 ns
Enable Pulse Width High See Data Input Timing 25 ns
, is measured between 20% and 80%.
(f) and L
(f) – 20log(N) – 10log(f
PLL_flat
(f).
COMP
Fin
). L
(f) is the single side band phase noise measured at an offset frequency, f, in a 1 Hz Bandwidth and f
PLL_flat
(f) contributes to the total noise, L(f). To measure L
PLL_flat
(f), which is dominant close to the carrier. Flicker noise has a 10
PLL_flicker
PLL_flat
(10 kHz) - 20log(Fout / 1 GHz), where L
PLL_flicker
(f) the offset frequency, f, must be chosen sufficiently
(f) it is important to be on the 10 dB/decade
PLL_flicker
(f), of the PLL and is defined as PN1Hz =
PLL_flat
COMP
V
V
PLL_flicker
PLL_flicker
is the phase
(f) can be
PLL_flat
fs
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