The LMH6624/LMH6626 offer wide bandwidth (1.5GHz for
single, 1.3GHz for dual) with very low input noise (0.92nV/
, 2.3pA/) and ultra low dc errors (100µV VOS,
±
0.1µV/˚C drift) providing very precise operational amplifiers
with wide dynamic range. This enables the user to achieve
closed-loop gains of greater than 10, in both inverting and
non-inverting configurations.
The LMH6624 (single) and LMH6626’s (dual) traditional voltage feedback topology provide the following benefits: balanced inputs, low offset voltage and offset current, very low
offset drift, 81dB open loop gain, 95dB common mode rejection ratio, and 88dB power supply rejection ratio.
±
The LMH6624/LMH6626 operate from
dual supply mode and from +5V to +12V in single supply
configuration.
LMH6624 is offered in SOT23-5 and SOIC-8 packages.
The LMH6626 is offered in SOIC-8 and MSOP-8 packages.
n Gain bandwidth (LMH6624)1.5GHz
n Input voltage noise0.92nV/
n Input offset voltage (limit over temp)700uV
n Slew rate350V/µs
n Slew rate (A
@
n HD2
@
n HD3
n Supply voltage range (dual supply)
n Supply voltage range (single supply)+5V to +12V
n Improved replacement for the CLC425(LMH6624)
n Stable for closed loop |A
= 10)400V/µs
V
f = 10MHz, RL= 100Ω−63dBc
f = 10MHz, RL= 100Ω−80dBc
±
2.5V to±6V
| ≥ 10
V
Applications
n Instrumentation sense amplifiers
n Ultrasound pre-amps
n Magnetic tape & disk pre-amps
n Wide band active filters
n Professional Audio Systems
n Opto-electronics
n Medical diagnostic systems
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
Wave Soldering (10 sec.)260˚C
Storage Temperature Range−65˚C to +150˚C
Junction Temperature (Note 3), (Note 4)+150˚C
Operating Ratings (Note 1)
Human Body Model2000V (Note 2)
LMH6624/LMH6626
Machine Model200V (Note 9)
Differential
V
IN
Supply Voltage (V
+-V−
)13.2V
Voltage at Input pinsV
Soldering Information
Infrared or Convection (20 sec.)235˚C
±
2.5V Electrical Characteristics
±
+
+0.5V, V−−0.5V
1.2V
Operating Temperature Range
(Note 3), (Note 4)−40˚C to +125˚C
Package Thermal Resistance (θ
)(Note 4)
JA
SOIC-8166˚C/W
SOT23–5265˚C/W
MSOP-8235˚C/W
Unless otherwise specified, all limits guaranteed at TA= 25˚C, V+= 2.5V, V−= −2.5V, VCM= 0V, AV= +20, RF= 500Ω,RL=
100Ω. Boldface limits apply at the temperature extremes. See (Note 12).
SymbolParameterConditionsMin
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Dynamic Performance
f
CL
SRSlew Rate(Note 8)V
t
r
t
f
t
s
−3dB BWVO= 400mVPP(LMH6624)90
V
= 400mVPP(LMH6626)80
O
=2VPP,AV= +20 (LMH6624)300
O
V
=2VPP,AV= +20 (LMH6626)290
O
V
=2VPP,AV= +10 (LMH6624)360
O
V
=2VPP,AV= +10 (LMH6626)340
O
Rise TimeVO= 400mV Step, 10% to 90%4.1ns
Fall TimeVO= 400mV Step, 10% to 90%4.1ns
Settling Time 0.1%VO=2VPP(Step)20ns
Distortion and Noise Response
e
n
Input Referred Voltage Noisef = 1MHz (LMH6624)0.92
Unless otherwise specified, all limits guaranteed at TA= 25˚C, V+= 2.5V, V−= −2.5V, VCM= 0V, AV= +20, RF= 500Ω,RL=
100Ω. Boldface limits apply at the temperature extremes. See (Note 12).
SymbolParameterConditionsMin
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Transfer Characteristics
A
VOL
Large Signal Voltage Gain(LMH6624)
= 100Ω,VO= −1V to +1V
R
L
(LMH6626)
= 100Ω,VO= −1V to +1V
R
L
X
t
Crosstalk Rejectionf = 1MHz (LMH6626)−75dB
75
70
72
67
79
79
Output Characteristics
V
R
I
I
O
O
SC
OUT
Output SwingRL= 100Ω
No Load
±
±
±
±
1.1
1.0
1.4
1.25
Output Impedancef ≤ 100KHz10mΩ
Output Short Circuit Current(LMH6624)
Sourcing to Ground
= 200mV (Note 3), (Note 11)
∆V
IN
(LMH6624)
Sinking to Ground
= −200mV (Note 3), (Note 11)
∆V
IN
(LMH6626)
Sourcing to Ground
= 200mV (Note 3),(Note 11)
∆V
IN
(LMH6626)
Sinking to Ground
= −200mV (Note 3),(Note 11)
∆V
IN
90
75
90
75
60
50
60
50
Output Current(LMH6624)
Sourcing, V
Sinking, V
O
= −0.8V
O
= +0.8V
(LMH6626)
Sourcing, V
Sinking, V
O
= −0.8V
O
= +0.8V
±
±
145
145
120
120
100
75
1.5
1.7
Power Supply
PSRRPower Supply Rejection RatioV
=±2.0V to±3.0V82
S
90dB
80
I
S
Supply Current (per channel)No Load11.416
18
LMH6624/LMH6626
Units
dB
V
mA
mA
mA
±
6V Electrical Characteristics
Unless otherwise specified, all limits guaranteed at TA= 25˚C, V+= 6V, V−= −6V, VCM= 0V, AV= +20, RF= 500Ω,RL=
100Ω. Boldface limits apply at the temperature extremes. See (Note 12).
SymbolParameterConditionsMin
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Dynamic Performance
f
CL
SRSlew Rate (Note 8)V
t
r
−3dB BWVO= 400mVPP(LMH6624)95
V
= 400mVPP(LMH6626)85
O
=2VPP,AV= +20 (LMH6624)350
O
V
=2VPP,AV= +20 (LMH6626)320
O
V
=2VPP,AV= +10 (LMH6624)400
O
V
=2VPP,AV= +10 (LMH6626)360
O
Rise TimeVO= 400mV Step, 10% to 90%3.7ns
www.national.com3
Units
MHz
V/µs
±
6V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed at TA= 25˚C, V+= 6V, V−= −6V, VCM= 0V, AV= +20, RF= 500Ω,RL=
100Ω. Boldface limits apply at the temperature extremes. See (Note 12).
SymbolParameterConditionsMin
t
f
LMH6624/LMH6626
t
s
Fall TimeVO= 400mV Step, 10% to 90%3.7ns
Settling Time 0.1%VO=2VPP(Step)18ns
(Note 6)
Typ
(Note 5)
(Note 6)
Distortion and Noise Response
e
n
Input Referred Voltage Noisef = 1MHz (LMH6624)0.92
Unless otherwise specified, all limits guaranteed at TA= 25˚C, V+= 6V, V−= −6V, VCM= 0V, AV= +20, RF= 500Ω,RL=
100Ω. Boldface limits apply at the temperature extremes. See (Note 12).
SymbolParameterConditionsMin
(Note 6)
I
SC
Output Short Circuit Current(LMH6624)
Sourcing to Ground
= 200mV (Note 3), (Note 11)
∆V
IN
(LMH6624)
Sinking to Ground
= −200mV (Note 3), (Note 11)
∆V
IN
(LMH6626)
Sourcing to Ground
= 200mV (Note 3), (Note 11)
∆V
IN
(LMH6626)
Sinking to Ground
= −200mV (Note 3), (Note 11)
∆V
IN
I
OUT
Output Current(LMH6624)
Sourcing, V
Sinking, V
O
= −4.3V
O
= +4.3V
(LMH6626)
Sourcing, V
Sinking, V
O
= −4.3V
O
= +4.3V
100
85
100
85
65
55
65
55
Typ
(Note 5)
156
156
120
120
100
80
Max
(Note 6)
Power Supply
PSRRPower Supply Rejection RatioV
=±5.4V to±6.6V82
S
88dB
80
I
S
Supply Current (per channel)No Load1216
18
LMH6624/LMH6626
Units
mA
mA
mA
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5kΩ in series with 100pF.
Note 3: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C.
Note 4: The maximum power dissipation is a function of T
P
=(T
D
J(MAX)-TA
Note 5: Typical Values represent the most likely parametric norm.
Note 6: All limits are guaranteed by testing or statistical analysis.
Note 7: Average drift is determined by dividing the change in parameter at temperature extremes into the total temperature change.
Note 8: Slew rate is the slowest of the rising and falling slew rates.
Note 9: Machine Model, 0Ω in series with 200pF.
Note 10: Simulation results.
Note 11: Short circuit test is a momentary test. Output short circuit duration is 1.5ms.
Note 12: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
Absolute maximum ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
)/ θJA. All numbers apply for packages soldered directly onto a PC board.
. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where T
J=TA
, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is