National Semiconductor LMH6622 Technical data

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LMH6622 Dual Wideband, Low Noise, 160MHz, Operational Amplifiers

February 2002

General Description

The LMH6622 is a dual high speed voltage feedback operational amplifier specifically optimized for lownoise.A voltage noise specification of 1.6nV/

cation 1.5pA/ distortion specificationthat exceeds 90dBc combineto make the LMH6622 an ideal choice for the receive channel amplifier in ADSL, VDSL, or other xDSL designs. The LMH6622 operates from +5V to +12V in single supply configuration. The LMH6622 is stable for A on National Semiconductor’s advanced VIP10 process enables excellent (160MHz) bandwidth at a current consumption of only 4.3mA/amplifier. Packages for this dual amplifier are the 8-lead SOIC and the 8-lead MSOP.

, abandwidth of 160MHz,and a harmonic

±

2.5V to±6V in dual supply mode and from

≥ 2orAV≤−1. The fabrication of the LMH6622

V

, a current noise specifi-

Features

VS=±6V, TA= 25˚C, Typical values unless specified

n Bandwidth (A n Supply Voltage Range n Slew rate 85V/µs n Supply current 4.3mA/amp n Input common mode voltage −4.75V to +5.7V n Output Voltage Swing (R n Input voltage noise 1.6nV/ n Input current noise 1.5pA/ n Linear output current 90mA n Excellent harmonic distortion 90dBc

= +2) 160MHz

V

±

2.5V to±6V +5V to +12

= 100Ω)

L

±

4.6V

Applications

n xDSL receiver n Low noise instrumentation front end n Ultrasound preamp n Active filters n Cellphone basestation

xDSL Analog Front End

20029226

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/

LMH6622

Distributors for availability and specifications.

ESD Tolerance

Human Body Model 2kV (Note 2) Machine Model 200V (Note 2)

V

Differential

IN

Supply Voltage (V Voltage at Input Pins V Soldering Information

Infrared or Convection (20 sec) 235˚C

±

6V Electrical Characteristics

+–V−

) 13.2V

+

+0.5V, V−−0.5V

±

1.2V

Wave Soldering (10 sec) 260˚C Storage Temperature Range −65˚C to +150˚C Junction Temperature (Note 4) +150˚C

Operating Ratings (Note 1)

Supply Voltage (V

+–V−

)

Junction Temperature Range (Note 3), (Note 4)

Package Thermal Resistance (Note 4) (θ

8-pin SOIC 166˚C/W

8-pin MSOP 211˚C/W

±

2.25V to±6V

−40˚C to +85˚C

)

JA

Unless otherwise specified, TJ= 25˚C, V+= 6V, V−= −6V, VCM= 0V, AV= +2, RF= 500Ω,RL= 100Ω. Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

(Note 6)

Typ

(Note 5)

Max

(Note 6)

Dynamic Performance

f

CL

BW

0.1dB

SR Slew Rate (Note 8) V TS Settling Time V

Tr Rise Time V Tf Fall Time V

−3dB BW VO= 200mV

0.1dB Gain Flatness VO= 200mV =2V

O

PP

=2VPPto±0.1% 40

O

=2VPPto±1.0% 35

V

O

= 0.2V Step, 10% to 90% 2.3 ns

O

= 0.2V Step, 10% to 90% 2.3 ns

O

PP PP

160 MHz

30 MHz 85 V/µs

Distortion and Noise Response

e

n

i

n

Input Referred Voltage Noise f = 100kHz 1.6 nV/

Input Referred Current Noise f = 100kHz 1.5 pA/ DG Differential Gain RL= 150Ω,RF= 470Ω, NTSC 0.03 % DP Differential Phase R HD2 2

HD3 3

nd

Harmonic Distortion fc= 1MHz, VO=2VPP,RL= 100Ω −90

rd

Harmonic Distortion fc= 1MHz, VO=2VPP,RL= 100Ω −94

MTPR Upstream V

= 150Ω,RF= 470Ω, NTSC 0.03 deg

L

= 1MHz, VO=2VPP,RL= 500Ω −100

f

c

= 1MHz, VO=2VPP,RL= 500Ω −100

f

c

= 0.6 V

O

, 26kHz to 132kHz

RMS

−78

(see test circuit 5)

Downstream V

= 0.6 V

O

, 144kHz to 1.1MHz

RMS

−70

(see test circuit 5)

Input Characteristics

V

OS

TC V I

OS

I

B

Input Offset Voltage VCM= 0V −1.2

+0.2 +1.2

−2

Input Offset Average Drift VCM= 0V (Note 7) −2.5 µV/˚C

OS

Input Offset Current VCM=0V −1

−0.04 1

−1.5

Input Bias Current VCM= 0V 4.7 10

+2

1.5

15

R

IN

Input Resistance Common Mode 17 MΩ

Differential Mode 12 kΩ

C

IN

Input Capacitance Common Mode 0.9 pF

Differential Mode 1.0 pF

Units

ns

dBc

mV

µA

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±

6V Electrical Characteristics (Continued)

Unless otherwise specified, TJ= 25˚C, V+= 6V, V−= −6V, VCM= 0V, AV= +2, RF= 500Ω,RL= 100Ω. Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions Min

(Note 6)

CMVR Input Common Mode Voltage

CMRR ≥ 60dB −4.75 −4.5

Range

CMRR Common-Mode Rejection Ratio Input Referred,

V

= −4.2 to +5.2V

CM

5.5 +5.7 80

75

Typ

(Note 5)

Max

(Note 6)

100 dB

Units

Transfer Characteristics

A

VOL

Large Signal Voltage Gain VO=4V

PP

74

83 dB

70

X

t

Crosstalk f = 1MHz −75 dB

Output Characteristics

V

O

Output Swing No Load, Positive Swing 4.8

5.2

4.6

No Load, Negative Swing −5.0 −4.6

−4.4

R

= 100Ω, Positive Swing 4.0

L

4.6

3.8

R

= 100Ω, Negative Swing −4.6 −4

L

−3.8

R I

I

O

SC

OUT

Output Impedance f = 1MHz 0.08 Ω Output Short Circuit Current Sourcing to Ground

= 200mV (Note 3), (Note 9)

∆V

IN

Sinking to Ground ∆V

= −200mV (Note 3), (Note 9)

IN

Output Current Sourcing, VO= +4.3V

Sinking, V

= −4.3V

O

100 135

100 130

90 mA

Power Supply

+PSRR Positive Power Supply

Rejection Ratio

−PSRR Negative Power Supply Rejection Ratio

I

S

Supply Current (per amplifier) No Load 4.3 6

Input Referred, V

= +5V to +6V

S

Input Referred, V

= −5V to −6V

S

80

74

75

69

95

90

6.5

LMH6622

V

mA

dB

mA

±

2.5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 2.5V, V−= −2.5V, VCM= 0V, AV= +2, RF= 500Ω, R

= 100Ω. Boldface limits apply at the temperature extremes.

L

Symbol Parameter Conditions Min

(Note 6)

Typ

(Note 5)

Max

(Note 6)

Dynamic Performance

f

CL

BW

0.1dB

SR Slew Rate (Note 8) V T

S

T

r

T

f

−3dB BW VO= 200mV

0.1dB Gain Flatness VO= 200mV

=2V

O

PP

PP PP

150 MHz

20 MHz 80 V/µs

Settling Time VO=2VPPto±0.1% 45

=2VPPto±1.0% 40

V

O

Rise Time VO= 0.2V Step, 10% to 90% 2.5 ns Fall Time VO= 0.2V Step, 10% to 90% 2.5 ns

Distortion and Noise Response

e

n

i

n

Input Referred Voltage Noise f = 100kHz 1.7 nV/

Input Referred Current Noise f = 100kHz 1.5 pA/

Units

ns

www.national.com3

±

2.5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 2.5V, V−= −2.5V, VCM= 0V, AV= +2, RF= 500Ω,

LMH6622

R

= 100Ω. Boldface limits apply at the temperature extremes.

L

Symbol Parameter Conditions Min

(Note 6)

HD2 2

HD3 3

MTPR Upstream V

nd

Harmonic Distortion fc = 1MHz, VO=2VPP,RL= 100Ω −88

rd

Harmonic Distortion fc = 1MHz, VO=2VPP,RL= 100Ω −92

fc = 1MHz, V

= 0.4V

O

fc = 1MHz, V

=2VPP,RL= 500Ω −98

O

=2VPP,RL= 500Ω −100

O

,26kHz to 132kHz

RMS

Typ

(Note 5)

−76

(see test circuit 5)

Downstream V

= 0.4V

O

,144kHz to 1.1MHz

RMS

−68

(see test circuit 5)

Input Characteristics

V

OS

Input Offset Voltage VCM= 0V −1.5

+0.3 +1.5

−2.3

TC V I

OS

Input Offset Average Drift VCM= 0V (Note 7) −2.5 µV/˚C

OS

Input Offset Current VCM= 0V −1.5

+0.01 1.5

−2.5

I

B

R

IN

Input Bias Current VCM= 0V 4.6 10

Input Resistance Common Mode 17 MΩ

Differential Mode 12 kΩ

C

IN

Input Capacitance Common Mode 0.9 pF

Differential Mode 1.0 pF

CMVR Input Common Mode Voltage

Range

CMRR Common Mode Rejection Ratio Input Referred,

CMRR ≥ 60dB −1.25 −1

2 +2.2

V

= −0.7 to +1.7V

CM

80

75

100 dB

Transfer Characteristics

A

VOL

X

t

Large Signal Voltage Gain VO=1V

PP

74 82 dB

Crosstalk f = 1MHz −75 dB

Output Characteristics

V

O

Output Swing No Load, Positive Swing 1.4

1.7

1.2

No Load, Negative Swing −1.5 −1.2

R

= 100Ω, Positive Swing 1.2

L

1.5

1

R

= 100Ω, Negative Swing −1.4 −1.1

L

R I

I

O

SC

OUT

Output Impedance f = 1MHz 0.1 Ω Output Short Circuit Current Sourcing to Ground

= 200mV (Note 3), (Note 9)

∆V

IN

Sinking to Ground ∆V

= −200mV (Note 3), (Note 9)

IN

Output Current Sourcing, VO= +0.8V

Sinking, V

= −0.8V

O

100 137

100 134

90 mA

Power Supply

+PSRR Positive Power Supply Rejection

Ratio

−PSRR Negative Power Supply Rejection Ratio

Input Referred, V

= +2.5V to +3V

S

Input Referred, V

= −2.5V to −3V

S

78

72

75

70

93

88 dB

Max

(Note 6)

+2.3

2.5

15

−1

−0.9

Units

dBc

mV

µA

V

mA

dB

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±

2.5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 2.5V, V−= −2.5V, VCM= 0V, AV= +2, RF= 500Ω, R

= 100Ω. Boldface limits apply at the temperature extremes.

L

Symbol Parameter Conditions Min

(Note 6)

I

S

Supply Current (per amplifier) No Load 4.1 5.8

Typ

(Note 5)

Max

(Note 6)

mA

6.4

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω in series with 200pF. Note 3: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the

maximum allowed junction temperature of 150˚C. Note 4: The maximum power dissipation is a function of T

(T

J(MAX)−TA

Note 5: Typical values represent the most likely parametric norm. Note 6: All limits are guaranteed by testing or statistical analysis. Note 7: Offset voltage average drift is determined by dividing the change in V Note 8: Slew rate is the slowest of the rising and falling slew rates. Note 9: Short circuit test is a momentary test.Output short circuitduration is infinitefor V

circuit duration is 1.5ms.

)/θJA. All numbers apply for packages soldered directly onto a PC board.

, θJAand TA. The maximum allowable power dissipation at any ambient temperature is PD=

J(MAX)

at temperature extremes into the total temperature change.

OS

>

≤±2.5V,atroom temperature andbelow.For V

S

±

2.5V,allowableshort

S

LMH6622

Units

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Typical Performance Characteristics

LMH6622

Current and Voltage Noise vs. Frequency Current and Voltage Noise vs. Frequency

20029224

20029225

Frequency Response vs. Input Signal Level Frequency Response vs. Input Signal Level

20029202 20029203

Inverting Amplifier Frequency Response Non-Inverting Amplifier Frequency Response

20029246 20029247

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