National Semiconductor LMH6570 Technical data

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LMH6570 2:1 High Speed Video Multiplexer

May 2005

General Description

The LMH™6570 is a high performance analog multiplexer optimized for professional grade video and other high fidelity high bandwidth analog applications. The output amplifier selects one of two buffered input signals based on the state of the SEL pin. The LMH6570 provides a 400 MHz bandwidth at 2 V definition television (HDTV) applications can benefit from the LMH6570’s 0.1 dB bandwidth of 150 MHz and its 2200 V/µs slew rate.

The LMH6570 supports composite video applications with its

0.02% and 0.05˚ differential gain and phase errors for NTSC and PAL video signals while driving a single, back terminated 75Ω load. An 80 mA linear output current is available for driving multiple video load applications.

The LMH6570 gain is set by external feedback and gain set resistors for maximum flexibility.

The LMH6570 is available in the 8 pin SOIC package.

output signal levels. Multimedia and high

Connection Diagram

8-Pin SOIC

Features

n 500 MHz, 500 mVPP, −3 dB bandwidth, AV=2 n 400 MHz, 2V n 8 ns channel switching time n 70 dB channel to channel isolation n 0.02%, 0.05˚ diff. gain, diff. phase n 0.1 dB gain flatness to 150 MHz n 2200 V/µs slew rate n Wide supply voltage range: 6V ( n −68 dB HD2 n −84 dB HD3

, −3 dB bandwidth, AV=2

5 MHz

10 MHz

3V) to 12V (±6V)

Applications

n Video router n Multi input video monitor n Instrumentation / Test equipment n Receiver IF diversity switch n Multi channel A/D driver n Picture in Picture video switch

Top View

20129905

Truth Table

SEL SD OUTPUT

1 0 IN1 * (1+RF/RG)

0 0 IN0 * (1+RF/RG)

X 1 Shutdown

LMH™is a trademark of National Semiconductor Corporation.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/

LMH6570

Distributors for availability and specifications.

Storage Temperature Range −65˚C to +150˚C

Soldering Information

Infrared or Convection (20 sec) 235 ˚C

Wave Soldering (10 sec) 260 ˚C

ESD Tolerance (Note 4)

Human Body Model 2000V

Operating Ratings (Note 1)

Machine Model 200V

+−V−

Supply Voltage (V

(Note 3) 130 mA

OUT

Signal & Logic Input Pin Voltage

Signal & Logic Input Pin Current

) 13.2V

(VS+0.6V)

20 mA

Maximum Junction Temperature +150˚C

5V Electrical Characteristics

Operating Temperature −40 ˚C to 85 ˚C

Supply Voltage Range 6V to 12V

Thermal Resistance

Package (θ

)(θJC)

8-Pin SOIC 150˚C/W 50˚C/W

VS=±5V, RL= 100Ω,RF=576Ω,AV=2 V/V, TJ=25 ˚C, Unless otherwise specified. Bold numbers specify limits at temperature extremes.

Symbol Parameter Conditions (Note 2) Min

(Note 5)

Typ

(Note 9)

Max

(Note 5)

Frequency Domain Performance

SSBW −3 dB Bandwidth V

LSBW –3 dB Bandwidth V

.1 dBBW 0.1 dB Bandwidth V

DG Differential Gain R

DP Differential Phase R

= 0.5 V

OUT

= 150Ω, f=4.43 MHz 0.02 %

= 150Ω, f=4.43 MHz 0.05 deg

=2V

= 0.25 V

500 MHz

400 MHz

150 MHz

XTLK Channel to Channel Crosstalk All Hostile,f=5MHz −70 dBc

Time Domain Response

TRS Channel to Channel Switching Time Logic transition to 90% output 8 ns

Enable and Disable Times Logic transition to 90% or 10%

10 ns

output.

TRL Rise and Fall Time 4V Step 2.4 ns

TSS Settling Time to 0.05% 2V Step 17 ns

OS Overshoot 2V Step 5 %

SR Slew Rate 4V Step, (Note 8) 2200 V/µs

Distortion

HD2 2

HD3 3

IMD 3

Harmonic Distortion 2 VPP, 5 MHz −68 dBc

Harmonic Distortion 2 VPP, 5 MHz −84 dBc

Order Intermodulation Products 10 MHz, Two tones 2 Vpp at output −80 dBc

Equivalent Input Noise

VN Voltage

ICN Current

1 MHz, Input Referred 5 nV

1 MHz, Input Referred 5 pA/

Static, DC Performance

CHGM Channel to Channel Gain Difference DC, Difference in gain between

channels

VIO Input Offset Voltage V

=0V 1

0.005±0.034

0.036

DVIO Offset Voltage Drift (Note 10) 30 µV/˚C

IBN Input Bias Current (Note 7) V

=0V −3

5.5

6.2

DIBN Bias Current Drift (Note 10) 11 nA/˚C

IBI Inverting Input Bias Current (Note 7) Pin 8, Feedback point,

=0V

PSRR Power Supply Rejection Ratio DC, Input referred 48

−3

50 dB

Units

µA

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5V Electrical Characteristics (Continued)

VS=±5V, RL= 100Ω,RF=576Ω,AV=2 V/V, TJ=25 ˚C, Unless otherwise specified. Bold numbers specify limits at temperature extremes.

Symbol Parameter Conditions (Note 2) Min

(Note 5)

ICC Supply Current No Load, Shutdown Pin (SD)

0.8V

Supply Current Shutdown Shutdown Pin (SD)

VIH Logic High Threshold Select Pin & Shutdown pin (SEL,

SD)

VIL Logic Low Threshold Select Pin & Shutdown pin (SEL,

SD)

IiL Logic Pin Input Current Low (Note 7) Logic Input = 0V Select Pin &

Shutdown pin (SEL, SD)

IiH Logic Pin Input Current High (Note 7) Logic Input = 5.0V, Select Pin &

Shutdown pin (SEL, SD)

Miscellaneous Performance

RIN+ Input Resistance 5kΩ

CIN Input Capacitance 0.8 pF

ROUT Output Resistance Output Active, (SD

ROUT Output Resistance Output Disabled, (SD

COUT Output Capacitance Output Disabled, (SD

VO Output Voltage Range No Load

VOL R

CMIR Input Voltage Range

IO Linear Output Current (Note 7) V

ISC Short Circuit Current(Note 3) V

= 100Ω

= 0V, +60

=±2V, Output shorted to

ground

0.8V) 0.04 Ω

2V 1.1 1.3

2.0 V

−2.9

-10

2V) 3000 Ω

2V) 3.1 pF

3.51

3.50

3.16

3.15

2.5

-70

Typ

(Note 9)

13.8 15

−1 µA

57 68

3.7 V

3.5 V

2.6 V

80 mA

230 mA

Max

(Note 5)

1.4

0.8 V

Units

µA

LMH6570

3.3V Electrical Characteristics

VS=±3.3V, RL= 100Ω,RF=576Ω,AV=2 V/V; Unless otherwise specified.

Symbol Parameter Conditions (Note 2) Min

(Note 5)

Frequency Domain Performance

SSBW −3 dB Bandwidth V

LSBW −3 dB Bandwidth V

0.1 dBBW 0.1 dB Bandwidth V

GFP Peaking DC to 200 MHz 0.4 dB

XTLK Channel to Channel Crosstalk All Hostile,f=5MHz −70 dBc

Time Domain Response

TRL Rise and Fall Time 2V Step 2 ns

TSS Settling Time to 0.05% 2V Step 20 ns

OS Overshoot 2V Step 5 %

SR Slew Rate 2V Step 1400 V/µs

Distortion

HD2 2

HD3 3

Static, DC Performance

Harmonic Distortion 2 VPP, 10 MHz −67 dBc

Harmonic Distortion 2 VPP, 10 MHz −87 dBc

OUT

= 0.5 V

= 2.0 V

= 0.5 V

Typ

(Note 9)

475 MHz

375 MHz

100 MHz

Max

(Note 5)

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Units

3.3V Electrical Characteristics (Continued)

VS=±3.3V, RL= 100Ω,RF=576Ω,AV=2 V/V; Unless otherwise specified.

LMH6570

Symbol Parameter Conditions (Note 2) Min

(Note 5)

VIO Input Offset Voltage V

IBN Input Bias Current (Note 7) V

=0V 1 mV

=0V -3 µA

Typ

(Note 9)

Max

(Note 5)

PSRR Power Supply Rejection Ratio DC, Input Referred 49 dB

ICC Supply Current No Load 12.5 mA

VIH Logic High Threshold Select Pin & Shutdown pin (SEL,

1.3 V

SD),

VIH )V

VIL Logic Low Threshold Select Pin & Shutdown pin (SEL,

* 0.4

0.4 V

SD),

VIL )V

* 0.12

Miscellaneous Performance

RIN+ Input Resistance 5kΩ

CIN Input Capacitance 0.8 pF

ROUT Output Resistance 0.06 Ω

VO Output Voltage Range No Load

VOL R

= 100Ω

CMIR Input Voltage Range

IO Linear Output Current (Note 3) V

ISC Short Circuit Current (Note 3) V

=0V

=±1V, Output shorted to

1.8 V

1.2 V

60 mA

150 mA

ground

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.

Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T See Applications Section for information on temperature de-rating of this device. Min/Max ratings are based on product testing, characterization and simulation. Individual parameters are tested as noted.

Note 3: The maximum output current (I 150˚C). See the Power Dissipation section of the Application Section for more details. A short circuit condition should be limited to 5 seconds or less.

Note 4: Human Body model, 1.5kΩ in series with 100pF. Machine model, 0Ω In series with 200pF

Note 5: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control

(SQC) methods.

Note 6: Parameter guaranteed by design.

Note 7: Positive Value is current into device.

Note 8: Slew Rate is the average of the rising and falling edges.

Note 9: Typical numbers are the most likely parametric norm.

Note 10: Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.

. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where T

J=TA

) is determined by the device power dissipation limitations (The junction temperature cannot be allowed to exceed

OUT

Units

TA.

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-Pin SOIC

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LMH6570MA

LMH6570MAX 2.5k Units Tape and Reel

LMH6570MA

95 Units/Rail

M08A

LMH6570

Typical Performance Characteristics V

specified.

Frequency Response vs. V

Frequency Response vs. Capacitive Load Suggested R

OUT

20129902 20129903

=±5V, RL= 100Ω,AV=2, RF=RG=576Ω; unless otherwise

Frequency Response vs. Gain

vs. Capacitive Load

OUT

20129914

Suggested Value of RFvs. Gain Pulse Response 4V

20129901

20129915

20129925

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