National Semiconductor LMH6560 Technical data

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LMH6560
Quad, High-Speed, Closed-Loop Buffer

LMH6560 Quad, High-Speed, Closed-Loop Buffer

April 2003

General Description

The LMH6560 is a high speed, closed-loop buffer designed
for applications requiring the processing of very high fre­quency signals. While offering a small signal bandwidth of
680MHz, and a very high slew rate of 3100V/µs the
LMH6560 consumes only 46mA of quiescent current for all
four buffers. Total harmonic distortion into a load of 100Ω at
20MHz is −51dBc. The LMH6560 is configured internally for
a loop gain of one. Input resistance is 100kΩ and output
resistance is but 1.5Ω. Crosstalk between the buffers is only

−55dB. These characteristics make the LMH6560 an ideal
choice for the distribution of high frequency signals on
printed circuit boards. Differential gain and phase specifica­tions of 0.10% and 0.03˚ respectively at 3.58MHz make the
LMH6560 well suited for the buffering of video signals.

The device is fabricated on National’s high speed VIP10
process using National’s proven high performance circuit
architectures.

Typical Schematic

Features

n Closed-loop quad buffer
n 680MHz small signal bandwidth
n 3100V/µs slew rate
n 0.10% / 0.03˚ differential gain / phase
n −51dBc THD at 20MHz
n Single supply operation (3V min.)
n 80mA output current

Applications

n Multi-channel video distribution
n Video switching and routing
n High-speed analog multiplexing
n Channelized EW
n High-density buffering
n Active filters
n Broadcast and high definition TV systems
n Medical imaging
n Test equipment and instrumentation

20064235

© 2003 National Semiconductor Corporation DS200642 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/

LMH6560

Distributors for availability and specifications.

ESD Tolerance

Human Body Model 2000V (Note 2)

Machine Model 200V (Note 3)

Output Short Circuit Duration (Note 4),(Note 5)

Supply Voltage (V

Voltage at Input/Output Pins V

Soldering Information

Infrared or Convection (20 sec.) 235˚C

±

5V Electrical Characteristics

+–V−

) 13V

+

+0.8V, V−−0.8V

Wave Soldering (10 sec.) 260˚C

Storage Temperature Range −65˚C to +150˚C

Junction Temperature (Note 6) +150˚C

Operating Ratings (Note 1)

Supply Voltage (V

Operating Temperature Range
(Note 6), (Note 7)

Package Thermal Resistance (Note 6), (Note 7)

14-Pin SOIC 137˚C/W

14-Pin TSSOP 160˚C/W

+–V−

) 3-10V

−40˚C to +85˚C

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= +5V, V−= −5V, VO=VCM= 0V and RL= 100Ω to 0V.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions

Min

(Note 9)

Typ

(Note 8)

Max

(Note 9) Units

Frequency Domain Response

SSBW Small Signal Bandwidth V

GFN Gain Flatness

<

0.1dB V

FPBW Full Power Bandwidth (−3dB) V

DG Differential Gain R

0.5V

O

O

O

L

PP

<

0.5V

PP

=2VPP(+10dBm) 280 MHZ

= 150Ω to 0V;

680 MHz

375 MHz

0.10 %

<

f = 3.58MHz

DP Differential Phase R

= 150Ω to 0V;

L

0.03 deg

f = 3.58MHz

Time Domain Response

t

r

t

f

t

s

Rise Time 3.3V Step (20-80%) 0.6 ns

Fall Time 0.7 ns

Settling Time to 0.1% 3.3V Step 9 ns

OS Overshoot 1V Step 4 %

SR Slew Rate (Note 11) 3100 V/µs

Distortion And Noise Performance

HD2 2

HD3 3

THD Total Harmonic Distortion V

e

n

nd

Harmonic Distortion VO=2VPP; f = 20MHz −58 dBc

rd

Harmonic Distortion VO=2VPP; f = 20MHz −52 dBc

=2VPP; f = 20MHz −51 dBc

O

Input-Referred Voltage Noise f = 1MHz 3 nV/

CP 1dB Compression Point f = 10MHz +23 dBm

CT Amplifier Crosstalk Receiving Amplifier:

=50Ω to 0V; f = 10MHz

R

S

SNR Signal to Noise Ratio f = 5MHz; V

AGM Amplifier Gain Matching R

=2kΩ to 0V; f = 5MHz;

L

=1V

V

O

=1V

O

PP

PP

−55 dB

120 dB

0.05 dB

Static, DC Performance

A

CL

Small Signal Voltage Gain VO= 100mV

PP

0.97 0.995

RL= 100Ω to 0V

V

O

= 100mV

PP

0.99 0.998

RL=2kΩ to 0V

V

OS

Input Offset Voltage 2 20

25

TC V

Temperature Coefficient Input

OS

(Note 12) 28 µV/˚C

Offset Voltage

V/V

mV

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±

5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= +5V, V−= −5V, VO=VCM= 0V and RL= 100Ω to 0V.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions

I

B

Input Bias Current (Note 10) −10

Min

(Note 9)

Typ

(Note 8)

Max

(Note 9) Units

−5 µA

−14

TC I

Temperature Coefficient Input

B

(Note 12) −4.7 nA/˚C

Bias Current

R

OUT

PSRR Power Supply Rejection Ratio V

I

S

Output Resistance RL= 100Ω to 0V; f = 100kHz 1.5

R

= 100Ω to 0V; f = 10MHz 1.6

L

=±5V to VS=±5.25V;

S

=0V

V

IN

48

44

67 dB

Supply Current, All 4 Buffers No Load 46 58

63

Miscellaneous Performance

R

IN

C

IN

V

O

Input Resistance 100 kΩ

Input Capacitance 2 pF

Output Swing Positive RL= 100Ω to 0V 3.10

3.34

3.08

=2kΩ to 0V 3.58

R

L

3.64

3.55

Output Swing Negative RL= 100Ω to 0V −3.34 −3.20

−3.17

=2kΩ to 0V −3.64 −3.58

R

L

−3.55

I

SC

I

O

Output Short Circuit Current Sourcing: VIN=V+;VO= 0V −83

Sinking: V

Linear Output Current Sourcing: VIN-VO= 0.5V

(Note 10)

Sinking: V
(Note 10)

=V−;VO=0V 83

IN

−50

−42

IN-VO

= −0.5V

50

40

−74

74

LMH6560

Ω

mA

V

V

mA

mA

5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= +5V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

Min

Symbol Parameter Conditions

(Note 9)

Frequency Domain Response

<

SSBW Small Signal Bandwidth V

GFN Gain Flatness

<

0.1dB V

FPBW Full Power Bandwidth (−3dB) V

DG Differential Gain R

0.5V

O

O

O

L

PP

<

0.5V

PP

=2VPP(+10dBm) 175 MHZ

= 150Ω to V+/2;

f = 3.58MHz

DP Differential Phase RL= 150Ω to V+/2;

f = 3.58MHz

Time Domain Response

t

r

t

f

t

s

Rise Time 2.3VPPStep (20-80%) 0.8 ns

Fall Time 1.0 ns

Settling Time to 0.1% 2.3V Step 10 ns

OS Overshoot 1V Step 0 %

SR Slew Rate (Note 11) 1445 V/µs

Typ

(Note 8)

Max

(Note 9) Units

455 MHz

75 MHz

0.4 %

0.09 deg

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5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= +5V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

LMH6560

Min

Symbol Parameter Conditions

(Note 9)

Distortion And Noise Performance

nd

HD2 2

HD3 3

THD Total Harmonic Distortion V

e

n

Harmonic Distortion VO=2VPP; f = 20MHz −52 dBc

rd

Harmonic Distortion VO=2VPP; f = 20MHz −54 dBc

=2VPP; f = 20MHz −50 dBc

O

Input-Referred Voltage Noise f = 1MHz 3 nV/

CP 1dB Compression Point f = 10MHz +14 dBm

CT Amplifier Crosstalk Receiving Amplifier:

=50Ω to V+/2; f = 10MHz

R

S

SNR Signal to Noise Ratio V

AGM Amplifier Gain Matching V

=1VPP; f = 5MHz 120 dB

O

=1V

O

PP

RL=2kΩ to V+/2; f = 5MHz

Static, DC Performance

A

CL

Small Signal Voltage Gain VO= 100mV

PP

0.97 0.994

RL= 100Ω to V+/2

V

O

= 100mV

PP

0.99 0.998

RL=2kΩ to V+/2

V

OS

TC V

Input Offset Voltage 2 13

Temperature Coefficient Input

OS

(Note 12) 2 µV/˚C

Offset Voltage

I

B

Input Bias Current (Note 10) −5

−5.5

TC I

Temperature Coefficient Input

B

(Note 12) 1.3 nA/˚C

Bias Current

R

OUT

PSRR Power Supply Rejection Ratio V

I

S

Output Resistance RL= 100Ω to V+/2; f = 100kHz 1.7

R

= 100Ω to V+/2; f = 10MHz 2.0

L

= +5V to VS= +5.5V;

S

IN=VS

/2

V

48

45

Supply Current All 4 Buffer No Load 21 26

Miscellaneous Performance

R

IN

C

IN

V

O

Input Resistance 16 kΩ

Input Capacitance 2 pF

Output Swing Positive RL= 100Ω to V+/2 3.74

3.70

RL=2kΩ to V+/2 3.92

3.90

Output Swing Negative R

I

SC

I

O

Output Short Circuit Current Sourcing: VIN=V+;VO=V+/2 −40

Linear Output Current Sourcing: VIN-VO= 0.5V

= 100Ω to V+/2 1.15 1.22

L

=2kΩ to V+/2 1.04 1.08

R

L

Sinking: V

=V−;VO=V+/2 22

IN

−50

(Note 10)

Sinking: VIN-VO= −0.5V
(Note 10)

−40

30

20

Typ

(Note 8)

Max

(Note 9) Units

−55 dB

0.5 dB

15

−2.5 µA

67 dB

30

3.85

3.96

1.27

1.10

−64

45

V/V

mV

Ω

mA

V

V

mA

mA

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3V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 3V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

Min

Symbol Parameter Conditions

(Note 9)

Frequency Domain Response

<

SSBW Small Signal Bandwidth V

GFN Gain Flatness

<

0.1dB V

FPBW Full Power Bandwidth (−3dB) V

0.5V

O

O

O

PP

<

0.5V

PP

=1VPP(+4.5dBm) 115 MHZ

Time Domain Response

t

r

t

f

t

s

Rise Time 1V Step (20-80%) 1.1 ns

Fall Time 1.3 ns

Settling Time to 0.1% 1V Step 11 ns

OS Overshoot 0.5V Step 0 %

SR Slew Rate (Note 11) 480 V/µs

Distortion And Noise Performance

HD2 2

HD3 3

THD Total Harmonic Distortion V

e

n

nd

Harmonic Distortion VO= 0.5VPP; f = 20MHz −55 dBc

rd

Harmonic Distortion VO= 0.5VPP; f = 20MHz −61 dBc

= 0.5VPP; f = 20MHz −54 dBc

O

Input-Referred Voltage Noise f = 1MHz 3 nV/

CP 1dB Compression Point f = 10MHz +4 dBm

CT Amplifier Crosstalk Receiving Amplifier:

=50Ω to V+/2; f = 10MHz

R

S

SNR Signal to Noise Ratio f = 5MHz; V

AGM Amplifier Gain Matching R

=2kΩ to V+/2;

L

f = 5MHz; V

O

O

=1V

=1V

PP

PP

Static, DC Performance

A

CL

Small Signal Voltage Gain VO= 100mV

PP

0.97 0.99

RL= 100Ω to V+/2

V

O

= 100mV

PP

0.99 0.997

RL=2kΩ to V+/2

V

OS

TC V

Input Offset Voltage 1.6 8

Temperature Coefficient Input

OS

(Note 12) 2.6 µV/˚C

Offset Voltage

I

B

Input Bias Current (Note 10) −3

−3.5

TC I

Temperature Coefficient Input

B

(Note 12) 0.3 nA/˚C

Bias Current

R

OUT

PSRR Power Supply Rejection Ratio V

I

S

Output Resistance RL= 100Ω to V+/2; f = 100kHz 2.1

R

= 100Ω to V+/2; f = 10MHz 2.8

L

= +3V to VS= +3.5V;

S

IN=VS

/2

V

48

46

Supply Current, All 4 Buffers No Load 11 15

Miscellaneous Performance

R

IN

C

IN

Input Resistance 17 kΩ

Input Capacitance 2 pF

Typ

(Note 8)

Max

(Note 9) Units

265 MHz

40 MHz

−55 dB

120 dB

0.4 dB

10

−1.4 µA

65 dB

18

V/V

mV

Ω

mA

LMH6560

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3V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 3V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

LMH6560

Min

Symbol Parameter Conditions

V

O

Output Swing Positive RL= 100Ω to V+/2 2.0

(Note 9)

1.93

RL=2kΩ to V+/2 2.1

2.0

Output Swing Negative R

= 100Ω to V+/2 0.95 1.0

L

RL=2kΩ to V+/2 0.85 0.90

I

SC

I

O

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.

Note 2: Human body model, 1.5kΩ in series with 100pF
Note 3: Machine Model, 0Ω in series with 200pF.

Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the

maximum allowed junction temperature of 150˚C.

Note 5: Short circuit test is a momentary test. See next note.

Note 6: The maximum power dissipation is a function of T

(T

J(MAX)-TA

Note 7: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that T
T

J

Note 8: Typical Values represent the most likely parametric norm.

Note 9: All limits are guaranteed by testing or statistical analysis.

Note 10: Positive current corresponds to current flowing into the device.

Note 11: Slew rate is the average of the positive and negative slew rate. Average Temperature Coefficient is determined by dividing the change in a parameter at

temperature extremes by the total temperature change.

Note 12: Average Temperature Coefficient is determined by dividing the change in a parameter at temperature extremes by the total temperature change.

Output Short Circuit Current Sourcing: VIN=V+;VO=V+/2 −26

Sinking: V

=V−;VO=V+/2 14

IN

Linear Output Current Sourcing: VIN-VO= 0.5V

(Note 10)

Sinking: V

IN-VO

= −0.5V

(Note 10)

, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD=

)/θJA. All numbers apply for packages soldered directly onto a PC board.

. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where

>

TA. See Applications section for information on temperature de-rating of this device.

J=TA

J(MAX)

−20

−13

12

8

Typ

(Note 8)

2.05

2.15

−30

20

Max

(Note 9) Units

1.07

1.0

V

V

mA

mA

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Connection Diagram

LMH6560

14-Pin SOIC/TSSOP

Top View

20064234

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

14-pin SOIC LMH6560MA LMH6560MA 55 Units/Rail M14A

LMH6560MAX 2.5k Units Tape and Reel

14-pin TSSOP LMH6560MT LMH6560MT 94 Units/Rail MTC14

LMH6560MTX 2.5k Units Tape and Reel

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