National Semiconductor LMH6559 Technical data

查询LMH6559供应商

LMH6559 High-Speed, Closed-Loop Buffer

April 2003

General Description

The LMH6559 is a high-speed, closed-loop buffer designed for applications requiring the processing of very high frequency signals. While offering a small signal bandwidth of 1750MHz, and an ultra high slew rate of 4580V/µs the LMH6559 consumes only 10mA of quiescent current. Total harmonic distortion into a load of 100Ω at 20MHz is −52dBc. The LMH6559 is configured internally for a loop gain of one. Input resistance is 200kΩ and output resistance is but 1.2Ω. These characteristics make the LMH6559 an ideal choice for the distribution of high frequency signals on printed circuit boards. Differential gain and phase specifications of 0.06% and 0.02˚ respectively at 3.58MHz make the LMH6559 well suited for the buffering of video signals.

The device is fabricated on National’s high-speed VIP10 process using National’s proven high performance circuit architectures.

Typical Schematic

Features

n Closed-loop buffer n 1750MHz small signal bandwidth n 4580V/µs slew rate n 0.06% / 0.02˚ differential gain/phase n −52dBc THD at 20MHz n Single supply operation (3V min.) n 75mA output current

Applications

n Video switching and routing n Test point drivers n High frequency active filters n Wideband DC clamping buffers n High-speed peak detector circuits n Transmission systems n Telecommunications n Test equipment and instrumentation

20064133

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/

LMH6559

Distributors for availability and specifications.

ESD Tolerance

Human Body Model 2000V (Note 2)

Machine Model 200V (Note 3)

Output Short Circuit Duration (Note 4), (Note 5)

Supply Voltage (V

Voltage at Input/Output Pins V

Soldering Information

Infrared or Convection (20 sec.) 235˚C

5V Electrical Characteristics

+–V−

) 13V

+0.8V, V−−0.8V

Wave Soldering (10 sec.) 260˚C

Storage Temperature Range −65˚C to +150˚C

Junction Temperature +150˚C

Operating Ratings (Note 1)

Supply Voltage (V

Operating Temperature Range (Note 6), (Note 7) −40˚C to +85˚C

Package Thermal Resistance (Note 6), (Note 7)

8-Pin SOIC 172˚C/W

5-Pin SOT23 235˚C/W

+-V−

) 3 - 10V

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= +5V, V−= −5V, VO=VCM= 0V and RL= 100Ω to 0V.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions

Min

(Note 9)

Typ

(Note 8)

Max

(Note 9) Units

Frequency Domain Response

SSBW Small Signal Bandwidth V

GFN Gain Flatness

0.1dB V

FPBW Full Power Bandwidth (−3dB) V

DG Differential Gain R

0.5V

=2VPP(+10dBm) 1050 MHZ

= 150Ω to 0V;

1750 MHz

200 MHz

0.06 %

f = 3.58 MHz

DP Differential Phase R

= 150Ω to 0V;

0.02 deg

f = 3.58 MHz

Time Domain Response

Rise Time 3.3V Step (20-80%) 0.4 ns

Fall Time 0.5 ns

Settling Time to±0.1% 3.3V Step 9 ns

OS Overshoot 1V Step 4 %

SR Slew Rate (Note 11) 4580 V/µs

Distortion And Noise Performance

HD2 2

HD3 3

THD Total Harmonic Distortion V

Harmonic Distortion VO=2VPP; f = 20MHz −58 dBc

Harmonic Distortion VO=2VPP; f = 20MHz −53 dBc

=2VPP; f = 20MHz −52 dBc

Input-Referred Voltage Noise f = 1MHz 2.8 nV/

CP 1dB Compression point f = 10MHz +23 dBm

SNR Signal to Noise Ratio f = 5MHz; V

=1V

120 dB

Static, DC Performance

Small Signal Voltage Gain VO= 100mV

.97 .996

RL= 100Ω to 0V

= 100mV

.99 .998

RL=2kΩ to 0V

Input Offset Voltage 3 20

TC V

Temperature Coefficient Input

(Note 12) 23 µV/˚C

Offset Voltage

Input Bias Current (Note 10) −10

−3 µA

−14

TC I

Temperature Coefficient Input

(Note 12) −3.6 nA/˚C

Bias Current

V/V

www.national.com 2

5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= +5V, V−= −5V, VO=VCM= 0V and RL= 100Ω to 0V.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions

OUT

PSRR Power Supply Rejection Ratio V

Output Resistance RL= 100Ω to 0V; f = 100kHz 1.2

= 100Ω to 0V; f = 10MHz 1.3

=±5V to VS=±5.25V 48

Min

(Note 9)

Typ

(Note 8)

Max

(Note 9) Units

63 dB

Supply Current No Load 10 14

Miscellaneous Performance

Input Resistance 200 kΩ

Input Capacitance 1.7 pF

Output Swing Positive RL= 100Ω to 0V 3.20

3.45

3.18

RL=2kΩ to 0V 3.55

3.65

3.54

Output Swing Negative R

= 100Ω to 0V −3.45 −3.20

−3.18

=2kΩ to 0V −3.65 −3.55

−3.54

Output Short Circuit Current Sourcing: VIN=+VS;VO= 0V −83

Sinking: V

Linear Output Current Sourcing: VIN-VO= 0.5V

(Note 10)

Sinking: V (Note 10)

=−VS;VO=0V 83

−50

−43

IN-VO

= −0.5V

−74

LMH6559

Ω

5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 5V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

Min

Symbol Parameter Conditions

(Note 9)

Frequency Domain Response

SSBW Small Signal Bandwidth V

GFN Gain Flatness

0.1dB V

FPBW Full Power Bandwidth (−3dB) V

DG Differential Gain R

0.5V

=2VPP(+10dBm) 485 MHZ

= 150Ω to V+/2;

f = 3.58 MHz

DP Differential Phase R

= 150Ω to V+/2;

f = 3.58 MHz

Time Domain Response

Rise Time 2.3VPPStep (20-80%) 0.6 ns

Fall Time 0.9 ns

Settling Time to±0.1% 2.3V Step 9.6 ns

OS Overshoot 1V Step 3 %

SR Slew Rate (Note 11) 2070 V/µs

Distortion And Noise Performance

HD2 2

HD3 3

THD Total Harmonic Distortion V

Harmonic Distortion VO=2VPP; f = 20MHz −53 dBc

Harmonic Distortion VO=2VPP; f = 20MHz −56 dBc

=2VPP; f = 20MHz −52 dBc

Input-Referred Voltage Noise f = 1MHz 2 nV/

Typ

(Note 8)

Max

(Note 9) Units

745 MHz

90 MHz

0.29 %

0.06 deg

www.national.com3

5V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 5V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

LMH6559

Min

Symbol Parameter Conditions

(Note 9)

CP 1dB Compression point f = 10MHz +7 dBm

SNR Signal to Noise Ratio f = 5MHz; V

=1V

Static, DC Performance

Small Signal Voltage Gain VO= 100mV

.97 .996

RL= 100Ω to V+/2

= 100mV

.99 .998

RL=2kΩ to V+/2

TC V

Input Offset Voltage 1.52 12

Temperature Coefficient Input

(Note 12) 23 µV/˚C

Offset Voltage

Input Bias Current (Note 10) −5

−8

TC I

Temperature Coefficient Input

(Note 12) 1.6 nA/˚C

Bias Current

OUT

PSRR Power Supply Rejection Ratio V

Output Resistance RL= 100Ω to V+/2; f = 100kHz 1.4

= 100Ω to V+/2; f = 10MHz 1.6

= +5V to VS= +5.5V;

IN=VS

Supply Current No Load 4.7 7

Miscellaneous Performance

Input Resistance 22 kΩ

Input Capacitance 2.0 pF

Output Swing Positive RL= 100Ω to V+/2 3.80

3.75

RL=2kΩ to V+/2 3.94

3.92

Output Swing Negative R

= 100Ω to V+/2 1.12 1.20

RL=2kΩ to V+/2 1.03 1.06

Output short circuit Current Sourcing: VIN=+VS;VO=V+/2 −57

Sinking: V

Linear Output Current Sourcing: VIN-VO= 0.5V

(Note 10)

Sinking: V (Note 10)

=−VS;VO=V+/2 26

−50

−43

IN-VO

= −0.5V

Typ

(Note 8)

Max

(Note 9) Units

123 dB

−2.7 µA

68 dB

8.5

3.88

3.98

1.25

1.09

−64

V/V

Ω

3V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 3V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions

Frequency Domain Response

SSBW Small Signal Bandwidth V

GFN Gain Flatness

0.1dB V

FPBW Full Power Bandwidth (−3dB) V

www.national.com 4

0.5V

=1VPP(+4.5dBm) 265 MHZ

Min

(Note 9)

Typ

(Note 8)

Max

(Note 9) Units

315 MHz

44 MHz

3V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 3V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

Min

Symbol Parameter Conditions

(Note 9)

Time Domain Response

Rise Time 1.0V Step (20-80%) 0.8 ns

Fall Time 1.2 ns

Settling Time to±0.1% 1V Step 10 ns

OS Overshoot 0.5V Step 0 %

SR Slew Rate (Note 11) 770 V/µs

Distortion And Noise Performance

HD2 2

HD3 3

THD Total Harmonic Distortion V

Harmonic Distortion VO=2VPP; f = 20MHz −74 dBc

Harmonic Distortion VO=2VPP; f = 20MHz −57 dBc

=2VPP; f = 20MHz −56 dBc

Input-Referred Voltage Noise f = 1MHz 2 nV/

CP 1dB Compression point f = 10MHz +4 dBm

SNR Signal to Noise Ratio f = 5MHz; V

=1V

Static, DC Performance

Small Signal Voltage Gain VO= 100mV

.97 .995

RL= 100Ω to V+/2

= 100mV

.99 .998

RL=2kΩ to V+/2

TC V

Input Offset Voltage 1 7

Temperature Coefficient Input

(Note 12) 3.5 µV/˚C

Offset Voltage

Input Bias Current (Note 10) −3

−3.5

TC I

Temperature Coefficient Input

(Note 12) 0.46 nA/˚C

Bias Current

OUT

PSRR Power Supply Rejection Ratio V

Output Resistance RL= 100Ω to V+/2; f = 100kHz 1.8

= 100Ω to V+/2; f = 10MHz 2.3

= +3V to VS= +3.5V;

=V+/2

Supply Current No Load 2.4 3.5

Miscellaneous Performance

Input Resistance 23 kΩ

Input Capacitance 2.3 pF

Output Swing Positive RL= 100Ω to V+/2 2.02

1.95

RL=2kΩ to V+/2 2.12

2.02

Output Swing Negative R

Output Short Circuit Current Sourcing: VIN=+VS;VO=V+/2 −32

= 100Ω to V+/2 .930 .970

=2kΩ to V+/2 .830 .880

Sinking: V

=−VS;VO=V+/2 15

Typ

(Note 8)

Max

(Note 9) Units

124 dB

−1.5 µA

68 dB

4.5

2.07

2.17

1.050

.980

V/V

Ω

LMH6559

www.national.com5

3V Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ= 25˚C, V+= 3V, V−= 0V, VO=VCM=V+/2 and RL= 100Ω to V+/2.

Boldface limits apply at the temperature extremes.

LMH6559

Min

Symbol Parameter Conditions

Linear Output Current Sourcing: VIN-VO= 0.5V

(Note 10)

Sinking: VIN-VO= −0.5V (Note 10)

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.

Note 2: Human body model, 1.5kΩ in series with 100pF Note 3: Machine Model, 0Ω in series with 200pF.

Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the

maximum allowed junction temperature of 150˚C

Note 5: Short circuit test is a momentary test. See next note

Note 6: The maximum power dissipation is a function of T

J(MAX)–TA

Note 7: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T

Note 8: Typical Values represent the most likely parametric norm.

Note 9: All limits are guaranteed by testing or statistical analysis.

Note 10: Positive current corresponds to current flowing into the device.

Note 11: Slew rate is the average of the positive and negative slew rate.

Note 12: Average Temperature Coefficient is determined by dividing the change in a parameter at temperature extremes by the total temperature change.

)/θJA. All numbers apply for packages soldered directly onto a PC board.

. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where

TA. See Applications section for information on temperature de-rating of this device.

J=TA

, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD=

J(MAX)

(Note 9)

−20

−13

Typ

(Note 8)

−28

Max

(Note 9) Units

Connection Diagrams

8-Pin SOIC 5-Pin SOT23

Top View

20064134

Top View

20064135

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-Pin SOIC LMH6559MA LMH6559MA 95 Units/Rail M08A

LMH6559MAX 2.5k Units Tape and Reel

5-Pin SOT23 LMH6559MF B05A 1k Units Tape and Reel MF05A

LMH6559MFX 3k Units Tape and Reel

www.national.com 6

LMH6559

Typical Performance Characteristics At T

fied.

Frequency Response Frequency Response Over Temperature

20064101 20064132

Gain Flatness Differential Gain and Phase

= 25˚C; V+= +5V; V−= −5V; Unless otherwise speci-

20064102

Differential Gain and Phase Transient Response Positive

20064104

20064103

20064107

www.national.com7

+ 15 hidden pages