National Semiconductor LMH6505 Technical data

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LMH6505 Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier

January 2006

General Description

The LMH6505 is a wideband DC coupled voltage controlled gain stage followed by a high-speed current feedback op amp which can directly drive a low impedance load. The gain adjustment range is 80 dB for up to 10 MHz which is accomplished by varying the gain control input voltage, V

Maximum gain is set by external components, and the gain can be reduced all the way to cut-off. Power consumption is 110 mW with a speed of 150 MHz and a gain control bandwidth (BW) of 100 MHz. Output referred DC offset voltage is less than 55 mV over the entire gain control voltage range. Device-to-device gain matching is within mum gain. Furthermore, gain is tested and guaranteed over a wide range. The output current feedback op amp allows high frequency large signals (Slew Rate = 1500 V/µs) and can also drive a heavy load current (60 mA) guaranteed. Near ideal input characteristics (i.e. low input bias current, low offset, low pin 3 resistance) enable the device to be easily configured as an inverting amplifier as well.

To provide ease of use when working with a single supply, the V ground pin potential (pin 4). V order to ease drive requirement. In single supply operation, the ground pin is tied to a "virtual" half supply.

The LMH6505’s gain control is linear in dB for a large portion of the total gain control range from 0 dB down to −85 dB 25˚C, as shown below. This makes the device suitable for AGC applications. For linear gain control applications, see the LMH6503 datasheet.

The LMH6505 is available in either the SOIC-8 or the MSOP-8 package. The combination of minimal external components and small outline packages allows the LMH6505 to be used in space-constrained applications.

range is set to be from 0V to +2V relative to the

input impedance is high in

0.5 dB at maxi-

Features

VS=±5V, TA= 25˚C, RF=1kΩ,RG= 100Ω,RL= 100Ω,A =A

n −3 dB BW 150 MHz n Gain control BW 100 MHz n Adjustment range ( n Gain matching (limit) n Supply voltage range 7V to 12V n Slew rate (inverting) 1500 V/µs n Supply current (no load) 11 mA n Linear output current n Output voltage swing n Input noise voltage 4.4 nV/ n Input noise current 2.6 pA/ n THD (20 MHz, RL= 100Ω,VO=2VPP) −45 dBc

= 9.4 V/V, Typical values unless specified.

VMAX

10 MHz) 80 dB

Applications

n Variable attenuator n AGC n Voltage controlled filter n Video imaging processing

0.50 dB

60 mA

2.4V

Typical Application

= 9.4 V/V

VMAX

Gain vs. V

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20171002

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/

LMH6505

Distributors for availability and specifications.

Junction Temperature 150˚C

Soldering Information:

Infrared or Convection (20 sec) 235˚C

Wave Soldering (10 sec) 260˚C

ESD Tolerance (Note 4)

Human Body Model 2000V

Machine Model 200V

Input Current

10 mA

Output Current 120 mA (Note 3)

Supply Voltages (V

Voltage at Input/ Output pins V

+-V−

) 12.6V

+0.8V, V−−0.8V

Storage Temperature Range −65˚C to 150˚C

Operating Ratings (Note 1)

Supply Voltages (V

Operating Temperature Range −40˚C to +85˚C

Thermal Resistance: (θ

8 -Pin SOIC 60 165

8-Pin MSOP 65 235

+-V−

) 7Vto12V

)(θJA)

Electrical Characteristics(Note 2)

Unless otherwise specified, all limits are guaranteed for TJ= 25˚C, VS=±5V, A

0.1V, RL= 100Ω,VG= +2V. Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions

Frequency Domain Response

BW −3 dB Bandwidth V

GF Gain Flatness V

OUT

4VPP,A

= 100 38

VMAX

0.9V ≤ VG≤ 2V,±0.2 dB

Att Range Flat Band (Relative to Max Gain)

Attenuation Range (Note 13)

Gain control Bandwidth V

0.2 dB Flatness, f<30 MHz 26

0.1 dB Flatness, f<30 MHz 9.5

= 1V (Note 12) 100 MHz

Control

CT (dB) Feed-through V

= 0V, 30 MHz

(Output/Input)

GR Gain Adjustment Range f<10 MHz 80

30 MHz 71

Time Domain Response

r,tf

Rise and Fall Time 0.5V Step 2.1 ns

OS % Overshoot 10 %

SR Slew Rate (Note 5) Non Inverting 900

Inverting 1500

Distortion & Noise Performance

HD2 2

Harmonic Distortion 2VPP, 20 MHz −47

Harmonic Distortion –61

THD Total Harmonic Distortion −45

En tot Total Equivalent Input Noise f

Input Noise Current f>1 MHz 2.6 pA/

1 MHz, R

SOURCE

=50Ω 4.4 nV/

DG Differential Gain f = 4.43 MHz, RL= 100Ω 0.30 %

DP Differential Phase 0.15 deg

DC & Miscellaneous Performance

GACCU Gain Accuracy

(See Application Information)

G Match Gain Matching

(See Application Information)

= 2.0V 0

0.8V

2V +0.1/−0.53 +4.3/−3.9

= 2.0V —

2V — +4.2/−4.0

K Gain Multiplier

(See Application Information)

= 9.4 V/V, RF=1kΩ,RG= 100Ω,VIN=

VMAX

Min

(Note 6)

Typ

(Note 6)

Max

(Note 6) Units

150

40 MHz

−51 dB

0.50

0.890

0.830

0.940 0.990

1.04

MHz

V/µs

dBcHD3 3

V/V

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Electrical Characteristics(Note 2) (Continued)

Unless otherwise specified, all limits are guaranteed for TJ= 25˚C, VS=±5V, A

0.1V, RL= 100Ω,VG= +2V. Boldface limits apply at the temperature extremes.

Symbol Parameter Conditions

NL Input Voltage Range RGOpen

RG_MAX

BIAS

TC I

OUT

OFFSET

RGCurrent Pin 3

Bias Current Pin 2 (Note 7) −0.6 −2.5

Bias Current Drift Pin 2 (Note 8) –190 pA/˚C

BIAS

Input Resistance Pin 2 7 MΩ

Input Capacitance Pin 2 2.8 pF

VGBias Current Pin 1, VG= 2V (Note 7) 0.9 µA

VGBias Drift Pin 1 (Note 8) 10 pA/˚C

VGInput Resistance Pin 1 25 MΩ

VGInput Capacitance Pin 1 2.8 pF

L Output Voltage Range RL= 100Ω

NL RL= Open

Output Impedance DC 0.12 Ω

Output Current V

Output Offset Voltage 0V<V

+PSRR +Power Supply Rejection Ratio

(Note 9)

−PSRR −Power Supply Rejection Ratio (Note 9)

Supply Current No Load 9.5

= 100Ω

=±4V from Rails

OUT

Input Referred, 1V change,

= 2.2V

Input Referred, 1V change,

= 2.2V

VMAX

Min

(Note 6)

–65 –72 dB

–65 –75

= 9.4 V/V, RF=1kΩ,RG= 100Ω,VIN=

0.60

Typ

(Note 6)

0.74

Max

(Note 6) Units

0.50

6.0

7.4 mA

5.0

−2.6

2.1

2.4

1.9

3.1

80 mA

11 14

7.5

LMH6505

µA

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Electrical Characteristics(Note 2) (Continued)

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics.

LMH6505

Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of

the device such that T

Note 3: The maximum output current (I

Note 4: Human Body Model is 1.5 kΩ in series with 100 pF. Machine Model is 0Ω in series with 200 pF

Note 5: Slew rate is the average of the rising and falling slew rates.

Note 6: Typical values represent the most likely parametric norm. Bold numbers refer to over temperature limits.

Note 7: Positive current corresponds to current flowing into the device.

Note 8: Drift is determined by dividing the change in parameter distribution at temperature extremes by the total temperature change.

Note 9: +PSRR definition: [|∆V

subtracted out.

Note 10: Gain/Phase normalized to low frequency value at 25˚C.

Note 11: Gain/Phase normalized to low frequency value at each setting.

Note 12: Gain control frequency response schematic:

. No guarantee of parametric performance is indicated in the Electrical Tables under conditions of internal self-heating where T

J=TA

OUT

) is determined by device power dissipation limitations or value specified, whichever is lower.

OUT

/∆V+|/AV], −PSRR definition: [|∆V

/∆V−|/AV] with 0.1V input voltage. ∆V

OUT

is the change in output voltage with offset shift

OUT

TA.

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Note 13: Flat Band Attenuation (Relative To Max Gain) Range Definition: Specified as the attenuation range from maximum which allows gain flatness specified

(either

0.2dB or±0.1dB), relative to A

0.2 dB: 19.7 dB down to -6.3 dB = 26 dB range

0.1 dB: 19.7 dB down to 10.2 dB = 9.5 dB range

gain. For example, for f<30 MHz, here are the Flat Band Attenuation ranges:

VMAX

Connection Diagram

8-Pin SOIC

Top View

20171001

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-Pin SOIC

8-Pin MSOP

LMH6505MA

LMH6505MAX 2.5k Units Tape and Reel

LMH6505MM

LMH6505MMX 3.5k Units Tape and Reel

LMH6505MA

A93A

95 Units/Rail

1k Units Tape and Reel

M08A

MUA08A

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LMH6505

Typical Performance Characteristics Unless otherwise specified: V

G=VGMAX,RF

=1kΩ,RG= 100Ω,VIN= 0.1V, input terminated in 50Ω.RL= 100Ω, Typical values.

Frequency Response Over Temperature Frequency Response for Various V

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Frequency Response (A

= 2) Inverting Frequency Response

VMAX

=±5V, TA= 25˚C,

Frequency Response for Various VG(A

(Large Signal) Frequency Response for Various Amplitudes

20171046

= 100)

VMAX

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Typical Performance Characteristics Unless otherwise specified: V

G=VGMAX,RF

LMH6505

=1kΩ,RG= 100Ω,VIN= 0.1V, input terminated in 50Ω.RL= 100Ω, Typical values. (Continued)

Gain Control Frequency Response I

=±5V, TA= 25˚C,

vs. V

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ISvs. V

20171020

PSRR A

Input Bias Current vs. V

vs. Supply Voltage

VMAX

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