The LMC6062 is a precision dual low offset voltage, micropower operational amplifier, capable of precision single
supply operation. Performance characteristics include ultra
low input bias current, high voltage gain, rail-to-rail output
swing, and an input common mode voltage range that includes ground. Thesefeatures, plus its low power consumption, make the LMC6062 ideally suited for battery powered
applications.
Other applications using the LMC6062 include precision
full-wave rectifiers, integrators, references, sample-and-hold
circuits, and true instrumentation amplifiers.
This device is built with National’s advanced double-Poly
Silicon-Gate CMOS process.
For designs that require higher speed, see the LMC6082
precision dual operational amplifier.
PATENT PENDING
Connection Diagram
8-Pin DIP/SO
Features
(Typical Unless Otherwise Noted)
n Low offset voltage 100 µV
n Ultra low supply current 16 µA/Amplifier
n Operates from 4.5V to 15V single supply
n Ultra low input bias current 10 fA
n Output swing within 10 mV of supply rail, 100k load
n Input common-mode range includes V
n High voltage gain 140 dB
n Improved latchup immunity
−
Applications
n Instrumentation amplifier
n Photodiode and infrared detector preamplifier
n Transducer amplifiers
n Hand-held analytic instruments
n Medical instrumentation
n D/A converter
n Charge amplifier for piezoelectric transducers
DS011298-1
Top View
Ordering Information
Temperature Range
Package
8-PinLMC6062AMNLMC6062AINN08ERail
Molded DIPLMC6062IN
8-PinLMC6062AIMM08ARail
Small OutlineLMC6062IMTape and Reel
8-PinLMC6062AMJ/883J08ARail
Ceramic DIP
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Voltage at Input/Output Pin(V
+−V−
Supply Voltage (V
Output Short Circuit to V
Output Short Circuit to V
Amp-to-Amp Isolation(Note 9)155dB
e
i
T.H.D.Total Harmonic DistortionF=1 kHz, A
Input-Referred Voltage NoiseF=1 kHz83nV/√Hz
n
Input-Referred Current NoiseF=1 kHz0.0002pA/√Hz
n
=
R
L
±
5V Supply
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 2: Applies to both single-supply and split-supply operation. Continous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of
Note 3: The maximum power dissipation is a function ofT
−TA)/θJA.
Note 4: Human body model, 1.5 kΩ in series with 100 pF.
Note 5: Typical values represent the most likely parametric norm.
Note 6: All limits are guaranteed by testing or statistical analysis.
+
=
Note 7: V
+
=
Note 8: V
Note 9: Input referred V
Note 10: For operating at elevated temperatures the device must be derated based on the thermal resistance θ
Note 11: Do not connect output to V
Note 12: All numbers apply for packages soldered directly into a PC board.
Note 13: For guaranteed Military Temperature Range parameters, see RETSMC6062X.
=
15V, V
15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
CM
7.5V and R
+
=
connected to 7.5V. For Sourcing tests, 7.5V ≤ VO≤ 11.5V. For Sinking tests, 2.5V ≤ VO≤ 7.5V.
L
15V and R
=
100 kΩ connected to 7.5V. Each amp excited in turn with 100 Hz to produce V
L
+
, when V+is greater than 13V or reliability witll be adversely affected.
=
−5
V
100 kΩ,V
J(Max)
=
2V
O
±
, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is P
30 mA over long term may adversely affect reliability.
0.01
PP
=
.
12 V
O
PP
=
JA
with P
)/θJA.
(T
D
J–TA
%
=
(T
D
J(Max)
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