National Semiconductor LM760 Technical data
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LM760
High Speed Differential Comparator
LM760 High Speed Differential Comparator
December 1994
General Description
The LM760 is a differential voltage comparator offering considerable speed improvement over the LM710 family and
operates from symmetric supplies of
LM760 can be used in high speed analog-to-digital conversion systems and as a zero crossing detector in disc file and
tape amplifiers. The LM760 output features balanced rise
and fall times for minimum skew and close matching between the complementary outputs. The outputs are TTL
compatible with a minimum sink capability of two gate loads.
g
4.5V tog6.5V. The
Connection Diagram
8-Lead DIP
Top View
Ordering Information
Temperature Range NSC
Commercial Package Type Package
0
Ctoa70§C Drawing
§
LM760CN 8-lead Plastic DIP N08E
Features
Y
Guaranteed high speedÐ 25 ns response time
Y
Guaranteed delay matching on both outputs
Y
Complementary TTL compatible outputs
Y
High sensitivity
Y
Standard supply voltages
Applications
Y
High speed A-to-D
Y
Peak or zero detector
TL/H/10067– 3
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
TL/H/10067
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Storage Temperature Range
Metal Can and Ceramic DIP
Molded DIP
Operating Temperature Range
Military (LM760)
Commercial (LM760C) 0
b
65§Ctoa175§C
b
65§Ctoa150§C
b
55§Ctoa125§C
Ctoa70§C
§
Lead Temperature
Metal Can and Ceramic DIP
(Soldering, 60 sec.) 300
Molded DIP (Soldering, 10 sec.) 265
Positive Supply Voltage
Negative Supply Voltage
Peak Output Current 10 mA
Differential Input Voltage
Input Voltage V
ESD Susceptibility TBD
C
§
C
§
a
8.0V
b
8.0V
g
5.0V
a
t
t
V
I
LM760
Electrical Characteristics
e
g
V
CC
4.5V tog6.5V, T
Symbol Parameter Conditions Min Typ Max Units
V
IO
I
IO
I
IB
R
O
t
PD
Dt
PD
Input Offset Voltage R
Input Offset Current 0.5 7.5 mA
Input Bias Current 8.0 60 mA
Output Resistance (Either Output) V
Response Time T
Response Time Difference
between Outputs (Note 1)
ofaVI1)b(tPDofbVI2)T
(t
PD
(tPDofaVI2)b(tPDofbVI1)T
(tPDofaVI1)b(tPDofaVI2)T
(tPDofbVI1)b(tPDofbVI2)T
R
I
C
I
DVIO/DT Average Temperature Coefficient R
DIIO/DT Average Temperature Coefficient T
V
IR
V
IDR
V
OH
V
OL
a
I
b
I
Input Resistance fe1.0 MHz 12 kX
Input Capacitance fe1.0 MHz 8.0 pF
of Input Offset Voltage T
of Input Offset Current
Input Voltage Range V
Differential Input Voltage Range
Output Voltage HIGH 0 mAsI
(Either Output) V
Output Voltage LOW I
(Either Output)
Positive Supply Current V
Negative Supply Current V
eb
55§Ctoa125§C, T
A
e
25§C for typical figures, unless otherwise specified
A
s
200X 1.0 6.0 mV
S
e
V
O
OH
e
25§C (Note 3) 18 30
A
e
T
25§C (Note 4) 25 ns
A
100 X
(Note 5) 16
e
25§C 5.0
A
e
25§C 5.0 ns
A
e
25§C 7.5
A
e
25§C 7.5
A
e
50X,
S
eb
55§Ctoa125§C
A
ea
25§Ctoa125§C 2.0
A
ea
25§Ctob55§C 7.0
T
A
e
g
6.5V
CC
s
5.0 mA
OH
ea
5.0V V
CC
e
I
80 mA, V
OH
e
3.2 mA
OL
e
g
CC
e
g
CC
e
g
4.5V 2.4 3.0
CC
6.5V 18 32 mA
6.5V 9.0 16 mA
g
4.0
2.4 3.2
3.0 mV/
g
4.5 V
g
5.0 V
0.25 0.4 V
nA/
b
V
C
§
C
§
2
LM760C
Electrical Characteristics
e
g
V
CC
4.5V tog6.5V, T
Symbol Parameter Conditions Min Typ Max Units
V
IO
I
IO
I
IB
R
O
t
PD
Dt
PD
Input Offset Voltage R
Input Offset Current 0.5 7.5 mA
Input Bias Current 8.0 60 mA
Output Resistance (Either Output) V
Response Time T
Response Time Difference
between Outputs (Note 1)
ofaVI1)b(tPDofbVI2)T
(t
PD
(tPDofaVI2)b(tPDofbVI1)T
(tPDofaVI1)b(tPDofaVI2)T
(tPDofbVI1)b(tPDofbVI2)T
R
I
C
I
DVIO/DT Average Temperature Coefficient R
DIIO/DT Average Temperature Coefficient T
V
IR
V
IDR
V
OH
V
OL
a
I
b
I
Note 1: T
Note 2: Ratings apply to ambient temperature at 25
Note 3: Response time measured from the 50% point of a 30 mV
Note 4: Response time measured from the 50% point of a 2.0 V
Note 5: Response time measured from the start of a 100 mV input step with 5.0 mV overdrive to the time when the output crosses the logic threshold.
Input Resistance fe1.0 MHz 12 kX
Input Capacitance fe1.0 MHz 8.0 pF
of Input Offset Voltage T
of Input Offset Current
Input Voltage Range V
Differential Input Voltage Range
Output Voltage HIGH 0 mAsI
(Either Output) V
Output Voltage LOW I
(Either Output)
Positive Supply Current V
Negative Supply Current V
e
150§C.
J Max
e
0§Ctoa70§C, T
A
e
25§C for typical figures, unless otherwise specified
A
s
200X 1.0 6.0 mV
S
e
V
O
OH
e
25§C (Note 3) 18 30
A
e
T
25§C (Note 4) 25 ns
A
100 X
(Note 5) 16
e
25§C 5.0
A
e
25§C 5.0 ns
A
e
25§C10
A
e
25§C10
A
e
50X,
S
e
0§Ctoa70§C
A
ea
25§Ctoa70§C 5.0
A
ea
25§Cto0§C10
T
A
e
g
6.5V
CC
s
5.0 mA
OH
ea
5.0V V
CC
e
I
80 mA, V
OH
e
3.2 mA
OL
e
g
CC
e
g
CC
C.
§
10 MHz sinusoidal input to the 50% point of the output.
P–P
10 MHz sinusoidal input to the 50% point of the output.
P–P
e
g
4.5V 2.5 3.0
CC
6.5V 18 34 mA
6.5V 9.0 16 mA
g
4.0
2.4 3.2
3.0 mV/
nA/
g
4.5 V
g
5.0 V
0.25 0.4 V
C
§
C
§
3
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