National Semiconductor LM4908 Technical data

February 2004
LM4908 10kV ESD Rated, Dual 120 mW Headphone Amplifier
10kV ESD Rated, Dual 120 mW Headphone Amplifier

General Description

The LM4908 is a dual audio power amplifier capable of delivering 120mW per channel of continuous average power into a 16load with 0.1% (THD+N) from a 5V power supply.
Boomer audio power amplifiers were designed specifically to provide high quality output power with a minimal amount of external components using surface mount packaging. Since the LM4908 does not require bootstrap capacitors or snub­ber networks, it is optimally suited for low-power portable systems.
The unity-gain stable LM4908 can be configured by external gain-setting resistors.

Key Specifications

j
THD+N at 1kHz at 120mW continuous average output power into 16 0.1% (typ)
j
THD+N at 1kHz at 75mW continuous average output power into 32 0.1% (typ)

Typical Application

j
Output power at 0.1% THD+N
at 1kHz into 32 75mW (typ)

Features

n Up to 10kV ESD protection on all pins n MSOP, SOP, and LLP surface mount packaging n Switch on/off click suppression n Excellent power supply ripple rejection n Unity-gain stable n Minimum external components

Applications

n Headphone Amplifier n Personal Computers n Portable electronic devices
*Refer to the Application Information Section for information concerning proper selection of the input and output coupling capacitors.

FIGURE 1. Typical Audio Amplifier Application Circuit

Boomer®is a registered trademark of National Semiconductor Corporation.
© 2004 National Semiconductor Corporation DS200752 www.national.com
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Connection Diagrams

LM4908
SOP (MA) and MSOP (MM) Package
Top View
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Order Number LM4908MA, LM4908MM
See NS Package Number M08A, MUA08A
LLP (LQ) Package
Top View
Order Number LM4908LQ
See NS Package Number LQB08A
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LM4908

Absolute Maximum Ratings (Note 3)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage 6.0V
Storage Temperature −65˚C to +150˚C
Input Voltage −0.3V to V
DD
+ 0.3V
θ
(MSOP) 56˚C/W
JC
θ
(MSOP) 210˚C/W
JA
θ
(SOP) 35˚C/W
JC
θ
(SOP) 170˚C/W
JA
θ
(LLP) 15˚C/W
JC
θ
(LLP) 117˚C/W (Note 9)
JA
θ
(LLP) 150˚C/W (Note 10)
JA
Power Dissipation (Note 4) Internally limited
ESD Susceptibility (Note 5) 10.0kV

Operating Ratings

ESD Susceptibility (Note 6) 500V
Junction Temperature 150˚C
Soldering Information (Note 1)
Small Outline Package
Vapor Phase (60 seconds) 215˚C
Infrared (15 seconds) 220˚C
Temperature Range
T
TA≤ T
MIN
MAX
Supply Voltage 2.0V V
Note 1: See AN-450 “Surface Mounting and their Effects on Product Reli­ability” for other methods of soldering surface mount devices.
−40˚C TA≤ 85˚C
5.5V
DD
Thermal Resistance
Electrical Characteristics (Notes 2, 3)
The following specifications apply for VDD= 5V unless otherwise specified, limits apply to TA= 25˚C.
Symbol Parameter Conditions LM4908 Units
Typ
(Note 7)
V
DD
Supply Voltage 2.0 V (min)
Limit
(Note 8)
5.5 V (max)
I
DD
P
tot
V
OS
Supply Current VIN= 0V, IO= 0A 1.6 3.0 mA (max)
Total Power Dissipation VIN= 0V, IO= 0A 8 16.5 mW (max)
Input Offset Voltage VIN= 0V 5 50 mV (max)
Ibias Input Bias Current 10 pA
V
CM
G
V
Io Max Output Current THD+N
R
O
V
O
Common Mode Voltage
Open-Loop Voltage Gain RL=5k 67 dB
<
0.1 % 70 mA
Output Resistance 0.1
Output Swing RL=32Ω, 0.1% THD+N, Min .3
R
=32Ω, 0.1% THD+N, Max 4.7
L
PSRR Power Supply Rejection Ratio Cb = 1.0µF, Vripple = 100mV
,
PP
0V
4.3 V
90 dB
f = 40Hz
Crosstalk Channel Separation RL=32Ω, f = 1kHz 82 dB
THD+N Total Harmonic Distortion + Noise f=1kHz
SNR Signal-to-Noise Ratio V
f
G
P
o
Unity Gain Frequency Open Loop, RL=5k 25 MHz
Output Power THD+N = 0.1%,f=1kHz
R
=16Ω,
L
=3.5VPP(at 0 dB)
V
O
R
=32Ω,
L
=3.5VPP(at 0 dB)
V
O
= 3.5Vpp(at 0 dB) 100 dB
O
R
=16 120 mW
L
R
=32 75 60 mW
L
0.05 %
66 dB
0.05 %
66 dB
THD+N = 10%,f=1kHz
R
=16 157 mW
L
R
=32 99 mW
L
C
I
Input Capacitance 3 pF
(Limits)
V
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Electrical Characteristics (Notes 2, 3) (Continued)
The following specifications apply for VDD= 5V unless otherwise specified, limits apply to TA= 25˚C.
LM4908
Symbol Parameter Conditions LM4908 Units
Typ
(Note 7)
C
L
Load Capacitance 200 pF
Limit
(Note 8)
SR Slew Rate Unity Gain Inverting 3 V/µs
Electrical Characteristics (Notes 2, 3)
The following specifications apply for VDD= 3.3V unless otherwise specified, limits apply to TA= 25˚C.
Symbol Parameter Conditions Conditions Units
Typ
(Note 7)
I
DD
V
OS
P
o
Supply Current VIN= 0V, IO= 0A 1.4 mA (max)
Input Offset Voltage VIN= 0V 5 mV (max)
Output Power THD+N = 0.1%,f=1kHz
R
=16 43 mW
L
R
=32 30 mW
L
THD+N = 10%,f=1kHz
R
=16 61 mW
L
R
=32 41 mW
L
Limit
(Note 8)
(Limits)
(Limits)
Electrical Characteristics (Notes 2, 3)
The following specifications apply for VDD= 2.6V unless otherwise specified, limits apply to TA= 25˚C.
Symbol Parameter Conditions Conditions Units
Typ
(Note 7)
I
DD
V
OS
P
o
Supply Current VIN= 0V, IO= 0A 1.3 mA (max)
Input Offset Voltage VIN= 0V 5 mV (max)
Output Power THD+N = 0.1%,f=1kHz
R
=16 20 mW
L
R
=32 16 mW
L
Limit
(Note 8)
THD+N = 10%,f=1kHz
R
=16 34 mW
L
R
=32 24 mW
L
Note 2: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance.
Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by T allowable power dissipation is P mounted, is 210˚C/W for package MUA08A and 170˚C/W for package M08A.
Note 5: Human body model, 100pF discharged through a 1.5kresistor.
Note 6: Machine Model, 220pF– 240pF discharged through all pins.
Note 7: Typicals are measured at 25˚C and represent the parametric norm.
Note 8: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Datasheet min/max specification limits are guaranteed by design, test,
or statistical analysis.
Note 9: The given θ that of the Exposed-DAP itself.
Note 10: The given θ
is for an LM4908 packaged in an LQB08A with the Exposed-DAP soldered to a printed circuit board copper pad with an area equivalent to
JA
is for an LM4908 packaged in an LQB08A with the Exposed-DAP not soldered to any printed circuit board copper.
JA
DMAX
=(T
)/θJA. For the LM4908, T
JMAX−TA
= 150˚C, and the typical junction-to-ambient thermal resistance, when board
JMAX
, θJA, and the ambient temperature TA. The maximum
JMAX
(Limits)
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External Components Description (Figure 1)
Components Functional Description
1. R
i
The inverting input resistance, along with Rf, set the closed-loop gain. Ri, along with Ci, form a high pass filter with f
= 1/(2πRiCi).
c
The input coupling capacitor blocks DC voltage at the amplifier’s input terminals. Ci, along with Ri,
2. C
i
create a highpass filter with f
= 1/(2πRiCi). Refer to the section, Selecting Proper External
C
Components, for an explanation of determining the value of C
3. R
4. C
f
S
The feedback resistance, along with Ri, set closed-loop gain.
This is the supply bypass capacitor. It provides power supply filtering. Refer to the Application Information section for proper placement and selection of the supply bypass capacitor.
This is the half-supply bypass pin capacitor. It provides half-supply filtering. Refer to the section,
5. C
6. C
7. R
B
O
B
Selecting Proper External Components, for information concerning proper placement and selection
.
of C
B
This is the output coupling capacitor. It blocks the DC voltage at the amplifier’s output and forms a high pass filter with R
at fO= 1/(2πRLCO)
L
This is the resistor which forms a voltage divider that provides 1/2 VDDto the non-inverting input of the amplifier.

Typical Performance Characteristics

LM4908
.
i
THD+N vs Frequency
= 2.6V, PWR = 15mW, RL=8
V
DD
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THD+N vs Frequency
VDD= 2.6V, PWR = 15mW, RL=16
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Typical Performance Characteristics (Continued)
LM4908
THD+N vs Frequency
V
= 2.6V, PWR = 15mW, RL=32
DD
THD+N vs Frequency
= 3.3V, PWR = 25mW, RL=16
V
DD
THD+N vs Frequency
VDD= 3.3V, PWR = 25mW, RL=8
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THD+N vs Frequency
VDD= 3.3V, PWR = 25mW, RL=32
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THD+N vs Frequency
= 5V, PWR = 50mW, RL=8
V
DD
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THD+N vs Frequency
VDD= 5V, PWR = 50mW, RL=16
Typical Performance Characteristics (Continued)
LM4908
THD+N vs Frequency
V
= 5V, PWR = 50mW, RL=32
DD
THD+N vs Output Power
= 2.6V, RL=8Ω, f = 1kHz
V
DD
THD+N vs Frequency
VDD= 5V, V
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= 3.5Vpp,RL=5k
OUT
THD+N vs Output Power
VDD= 2.6V, RL=16Ω, f = 1kHz
THD+N vs Output Power
= 2.6V, RL=32Ω, f = 1kHz
V
DD
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THD+N vs Output Power
VDD= 3.3V, RL=8Ω, f = 1kHz
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