National Semiconductor LM195, LM395 Technical data

LM195/LM395 Ultra Reliable Power Transistors

General Description

The LM195/LM395 are fast, monolithic power integrated circuits with complete overload protection. These devices, which act as high gain power transistors, have included on the chip, current limiting, power limiting, and thermal over­load protection making them virtually impossible to destroy from any type of overload. In the standard TO-3 transistor power package, the LM195 will deliver load currents in ex­cess of 1.0A and can switch 40V in 500 ns.
The inclusion of thermal limiting, a feature not easily avail­able in discrete designs, provides virtually absolute protec­tion against overload. Excessive power dissipation or inad­equate heat sinking causes the thermal limiting circuitry to turn off the device preventing excessive heating.
The LM195 offers a significant increase in reliability as well as simplifying power circuitry. In some applications, where protection is unusually difficult, such as switching regulators, lamp or solenoid drivers where normal power dissipation is low, the LM195 is especially advantageous.
The LM195 is easy to use and only a few precautions need be observed. Excessive collector to emitter voltage can de­stroy the LM195 as with any power transistor. When the device is used as an emitter follower with low source imped-
ance, it is necessary to insert a 5.0k resistor in series with the base lead to prevent possible emitter follower oscilla­tions. Although the device is usually stable as an emitter follower, the resistor eliminates the possibility of trouble with­out degrading performance. Finally, since it has good high frequency response, supply bypassing is recommended.
For low-power applications (under 100 mA), refer to the LP395 Ultra Reliable Power Transistor.
The LM195/LM395 are available in the standard TO-3, Kovar TO-5, and TO-220 packages. The LM195 is rated for opera­tion from −55˚C to +150˚C and the LM395 from 0˚C to +125˚C.

Features

n Internal thermal limiting n Greater than 1.0A output current n 3.0 µA typical base current n 500 ns switching time n 2.0V saturation n Base can be driven up to 40V without damage n Directly interfaces with CMOS or TTL n 100% electrical burn-in
LM195/LM395 Ultra Reliable Power Transistors
July 2000

Simplified Circuit

1.0 Amp Lamp Flasher
00600916
00600901
© 2004 National Semiconductor Corporation DS006009 www.national.com

Connection Diagrams

LM195/LM395
Case is Emitter
TO-3 Metal Can Package
00600902
Bottom View
Order Number LM195K/883
See NS Package Number K02A
(Note 5)
TO-220 Plastic Package
Top View
Order Number LM395T
See NS Package Number T03B
TO-5 Metal Can Package
00600904
Bottom View
Order Number LM195H/883
See NS Package Number H03B
(Note 5)
00600903
www.national.com 2
LM195/LM395

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Collector to Emitter Voltage
LM195 42V
LM395 36V
Collector to Base Voltage
LM195 42V
Base to Emitter Voltage (Reverse) 20V
Collector Current Internally Limited
Power Dissipation Internally Limited
Operating Temperature Range
LM195 −55˚C to +150˚C
LM395 0˚C to +125˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.) 260˚C
LM395 36V
Base to Emitter Voltage (Forward)
LM195 LM395
42V 36V

Preconditioning

100% Burn-In In Thermal Limit

Electrical Characteristics

(Note 2)
Parameter Conditions LM195 LM395 Units
Min Typ Max Min Typ Max
Collector-Emitter Operating Voltage I
(Note 4)
Base to Emitter Breakdown Voltage 0 V
Collector Current
TO-3, TO-220 V
TO-5 V
Saturation Voltage I
Base Current 0 I
Quiescent Current (IQ)V
Base to Emitter Voltage IC= 1.0A, TA= +25˚C 0.9 0.9 V
Switching Time V
Thermal Resistance Junction to TO-3 Package (K) 2.3 3.0 2.3 3.0 ˚C/W
Case (Note 3) TO-5 Package (H) 12 15 12 15 ˚C/W
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits.
Note 2: Unless otherwise specified, these specifications apply for −55˚C T
Note 3: Without a heat sink, the thermal resistance of the TO-5 package is about +150˚C/W, while that of the TO-3 package is +35˚C/W.
Note 4: Selected devices with higher breakdown available.
Note 5: Refer to RETS195H and RETS195K drawings of military LM195H and LM195K versions for specifications.
IC≤ I
Q
CE
CE
C
0 V
be
0 V
CE
T
A
MAX
V
CE
CEMAX
42 36 60 V
15V 1.2 2.2 1.0 2.2 A
7.0V 1.2 1.8 1.0 1.8 A
1.0A, TA= 25˚C 1.8 2.0 1.8 2.2 V
I
C
MAX
V
CE
CEMAX
=0
V
CE
CEMAX
= 36V, RL=36Ω,
= 25˚C
3.0 5.0 3.0 10 µA
2.0 5.0 2.0 10 mA
500 500 ns
42 36 V
TO-220 Package (T) 4 6 ˚C/W
+150˚C for the LM195 and 0˚C +125˚C for the LM395.
j
www.national.com3

Typical Performance Characteristics

(for K and T Packages)
LM195/LM395
Collector Characteristics Short Circuit Current
00600933
Bias Current Quiescent Current
00600934
00600935
Base Emitter Voltage Base Current
00600937
00600936
00600938
www.national.com 4
Loading...
+ 9 hidden pages