LM3421, LM3423
N-Channel Controllers for Constant Current LED Drivers
LM3421, LM3423 N-Channel Controllers for Constant Current LED Drivers
General Description
The LM3421/LM3423 devices are versatile high voltage LED
driver controllers. With the capability to be configured in a
Buck, Boost, Buck-Boost (Flyback), or SEPIC topology, and
an input operating voltage rating of 75V, these controllers are
ideal for illuminating LEDs in a very diverse, large family of
applications.
Adjustable high-side current sense with a typical sense voltage of 100mV allows for tight regulation of the LED current
with the highest efficiency possible. Output LED current regulation is based on peak current-mode control with predictive
Off-Time Control. This method of control eases the design of
loop compensation while providing inherent input voltage
feed-forward compensation.
The LM3421/LM3423 include a high-voltage startup regulator
that operates over a wide input range of 4.5V to 75V. The
internal PWM controller is designed for adjustable switching
frequencies of up to 2.0MHz, thus enabling compact solutions. Additional features include: “zero” current shutdown,
precision reference, logic compatible DIM input suitable for
fast PWM dimming, cycle-by-cycle current limit, and thermal
shutdown.
The LM3423 also includes an LED output status flag, a fault
flag, a programmable fault timer, and a logic input to select
the polarity of the dimming output driver.
LM3421MHXNOPBTSSOP-16 EPMXA16A2500 Units, Tape and Reel
LM3423MHNOPBTSSOP-20 EPMXA20A73 Units, Rail
LM3423MHXNOPBTSSOP-20 EPMXA20A2500 Units, Tape and Reel
Top View
20-Lead TSSOP EP
Supplied As
30067366
Pin Descriptions
LM3423LM3421NameFunction
11
22EN
33COMP
44CSH
55RCT
66AGND
77OVP
88nDIM
9-FLT
V
Power supply input (4.5V-75V). Bypass with 100nF capacitor to AGND as close to the device
IN
as possible in the circuit board layout.
Enable: Pull to ground for zero current shutdown. Tie directly to VIN for automatic startup at
4.1V.
Compensation: PWM controller error amplifier compensation pin. This pin connects through
a series resistor-capacitor network to AGND.
Current Sense High: Output of the high side sense amplifier and input to the main regulation
loop error amplifier.
Resistor Capacitor Timing: External RC network sets the predictive “off-time” and thus the
switching frequency. The RC network should be placed as close to the device as possible in
the circuit board layout.
Analog Ground: The proper place to connect the compensation and timing capacitor returns.
This pin should be connected via the circuit board to the PGND pin through the EP copper
circuit board pad.
Over-Voltage Protection sense input: 1.24V threshold with hysteresis that is user
programmable by the selection of the OVP Over-Voltage Lock-Out (OVLO) resistor divider
network.
Not DIM input: Dual function pin. Primarily used as the Pulse Width Modulation (PWM) input.
When driven with a resistor divider from VIN, this pin also functions as a user programmable
VIN Under-Voltage Lock-Out (UVLO) with 1.24V threshold and programmable hysteresis by
the UVLO resistor divider network. The PWM and UVLO functions can be performed
simultaneously.
Fault flag: This is an N-channel MOSFET open drain output. The FLT pin transitions to the
high (open) state once the Fault Timer has timed out and latched the controller off.
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LM3423LM3421NameFunction
Fault Timer: The fault timer is comprised of an external capacitor, an internal charging current
10-TIMR
source, an internal discharge N-channel MOSFET, and a comparator that latches the fault
condition when the threshold voltage (1.24V) is exceeded.
11-LRDY
12-DPOL
LED Ready status flag: This is an N-channel MOSFET open drain output which pulls down
whenever the LED current is not in regulation.
Dim Polarity: Selects the polarity of the DIM driver output. Tie to VCC or leave open for low
side dimming, tie to ground for high side dimming.
Power Ground: GATE and DDRV gate drive ground current return pin. This pin should be
connected via the circuit board to the AGND pin through the EP copper circuit board pad.
1511GATEMain switching MOSFET gate drive output.
1612
V
Internal Regulator Bypass: 6.9V low dropout linear regulator output. Bypass with a 2.2µF–
CC
3.3µF, ceramic type capacitor to PGND.
Main Switch Current Sense input: This pin is used for current mode control and cycle-by-cycle
1713IS
current limit. This pin can be tied to the drain of the main N-channel MOSFET switch for
R
sensing or tied to a sense resistor installed in the source of the same device.
DS(ON)
Resistor Pull-Down: This is an open drain N-channel MOSFET which is used to pull-down the
1814RPD
low side of all external resistor dividers (VIN UVLO, OVP). This pin allows for system “zerocurrent” shutdown.
High Side Sense Positive: LED current sense positive input. An external resistor sets a
reference current flowing into this pin from the programmed high-side sense voltage. Although
1915HSP
the current into this pin can be set to values ranging from 10µA through 1mA, a value of 100µA
is recommended. This pin is a virtual ground whose potential is set by the voltage on the HSN
pin.
High Side Sense Negative: This pin sets the reference voltage for the HSP input. An external
2016HSN
resistor of the same value as that used on the HSP pin should be connected from this pin to
the negative side of the current sense resistor.
EP (21)EP (17)EP
EP: Star ground, connecting AGND and PGND. For thermal considerations please refer to
(Note 4) of the Electrical Characteristics table.
LM3421, LM3423
3www.national.com
Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VIN, EN, RPD, nDIM-0.3V to 76.0V
LM3421, LM3423
OVP, HSP, HSN, LRDY, FLT,
DPOL
RCT-0.3V to 76.0V
-1mA to +5mA continuous
IS-0.3V to 76.0V
V
CC
TIMR-0.3V to 7.0V
COMP, CSH-0.3V to 6.0V
GATE, DDRV-0.3V to V
-1mA continuous
-0.3V to 76.0V
-100µA continuous
-2V for 100ns
-1mA continuous
-0.3V to 8.0V
-100µA to +100µA
-200µA to +200µA
Continuous
Continuous
CC
PGND-0.3V to 0.3V
-2.5V to 2.5V for 100ns
Maximum Junction
Temperature (Internally
Limited)
Storage Temperature Range−65°C to +150°C
Maximum Lead Temperature
(Soldering) (Note 5)
Continuous Power Dissipation
Internally Limited
(Notes , 4)
ESD Susceptibility
(Note 6)
Human Body Model2kV
Machine Model200V
Charge Device Model500V
Operating Conditions (Notes 1, 2)
Operating Junction
Temperature Range (Note 7)−40°C to +150°C
Input Voltage V
IN
-2.5V for 100ns
VCC+2.5V for 100ns
-1mA to +1mA continuous
Electrical Characteristics (Note 2)
Specifications in standard type face are for TJ = 25°C and those with boldface type apply over the full Operating Temperature
Range ( TJ = −40°C to +125°C). Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical
values represent the most likely parametric norm at TJ = +25°C, and are provided for reference purposes only. Unless otherwise
stated the following condition applies: VIN = +14V.
SymbolParameterConditions
STARTUP REGULATOR
V
CCREG
I
CCLIM
I
Q
I
SD
VCC RegulationICC = 0mA6.30
VCC Current LimitVCC = 0V
Quiescent CurrentEN = 3.0V, Static
Shutdown CurrentEN = 0V0.11.0
VCC SUPPLY
V
CCUV
VCC UVLO ThresholdVCC Increasing
VCC Decreasing
V
CCHYS
VCC UVLO Hysteresis0.1
EN THRESHOLDS
EN
ST
EN Startup ThresholdEN Increasing1.752.40
EN Decreasing0.801.63
EN
R
STHYS
EN
EN Startup Hysteresis
EN Pulldown ResistanceEN = 1V
CSH THRESHOLDS
CSH High FaultCSH Increasing1.6
CSH Low Condition on LRDY
CSH increasing
Pin (LM3423 only)
OV THRESHOLDS
OVP
OVP
CB
HYS
OVP OVLO ThresholdOVP Increasing
OVP Hysteresis Source
OVP Active (high)
Current
DPOL THRESHOLDS
DPOL
DPOL Logic ThresholdDPOL Increasing2.0
THRESH
Min(Note 7) Typ(Note 8) Max(Note 7)
6.907.35V
2025
23
4.174.50
3.704.08
0.1
0.450.821.30
1.0
1.1851.2401.285V
202325µA
2.32.6V
165°C
300°C
4.5V to 75V
Units
mA
µA
V
V
MΩ
V
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LM3421, LM3423
SymbolParameterConditions
R
DPOL
DPOL Pullup Resistance
Min(Note 7) Typ(Note 8) Max(Note 7)
5001200
Units
KΩ
FAULT TIMER
V
I
FLT
FLTTH
Fault Threshold
Fault Pin Source Current
1.1851.2401.285V
1011.513µA
ERROR AMPLIFIER
V
REF
Error Amplifier Input Bias
CSH Reference VoltageWith Respect to AGND1.210
Current
-0.600.6
1.2351.260V
µA
COMP Sink / Source Current 223035
Transconductance100µA/V
Linear Input Range(Note 9)±125mV
Transconductance Bandwidth
(Note 9)
-6dB Unloaded Response
0.51.0
MHz
OFF TIMER
Minimum Off-time
R
RCT
RCT Reset Pull-down
Resistance
V
RCT
VIN/25 Reference VoltageVIN = 14V540
fContinuous Conduction
Switching Frequency
RCT = 1V through 1kΩ
2.2nF > CT > 470pF
3575
36120
565585mV
25/(CTRT)
ns
Ω
Hz
PWM COMPARATOR
COMP to PWM Offset700800900mV
CURRENT LIMIT (IS)
I
LIM
I
Leading Edge Blanking Time 115210325
Current Limit Threshold200
Delay to Output
LIM
245300mV
3575
ns
HIGH SIDE TRANSCONDUCTANCE AMPLIFIER
Input Bias Current11.5µA
Transconductance20119mA/V
Input Offset Current-1.501.5µA
Input Offset Voltage-707mV
Transconductance Bandwidth
(Note 9)
I
CSH
= 100µA
250500kHz
GATE DRIVER (GATE)
R
SRC(GATE)
R
SNK(GATE)
GATE Sourcing ResistanceGATE = High
GATE Sinking ResistanceGATE = Low
2.06.0
1.34.5
Ω
DIM DRIVER (DIM, DDRV)
nDIM
nDIM
R
SRC(DDRV)
R
SNK(DDRV)
VTH
HYS
nDIM / UVLO Threshold1.185
nDIM Hysteresis Current20
DDRV Sourcing ResistanceDDRV = High
DDRV Sinking ResistanceDDRV = Low
1.2401.285V
2325µA
13.530.0
3.510.0
Ω
PULL-DOWN N-CHANNEL MOSFETS
R
R
R
RPD
FLT
LRDY
RPD Pull-down Resistance
FLT Pull-down Resistance
LRDY Pull-down Resistance
145300
145300
135300
Ω
THERMAL SHUTDOWN
T
SD
T
HYS
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
165
25
°C
THERMAL RESISTANCE
5www.national.com
SymbolParameterConditions
θ
JA
Junction to Ambient (Note 4)16L TSSOP EP37.4
Min(Note 7) Typ(Note 8) Max(Note 7)
20L TSSOP EP34.0
θ
JC
Junction to Exposed Pad (EP) 16L TSSOP EP2.3
20L TSSOP EP2.3
LM3421, LM3423
Note 1: Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is intended
to be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: All voltages are with respect to the potential at the AGND pin, unless otherwise specified.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=165°C (typical) and disengages at
TJ=140°C (typical).
Note 4: Junction-to-ambient thermal resistance is highly board-layout dependent. The numbers listed in the table are given for an reference layout wherein the
16L TSSOP package has its EP pad populated with 9 vias and the 20L TSSOP has its EP pad populated with 12 vias. In applications where high maximum power
dissipation exists, namely driving a large MOSFET at high switching frequency from a high input voltage, special care must be paid to thermal dissipation issues
during board design. In high-power dissipation applications, the maximum ambient temperature may have to be derated. Maximum ambient temperature (T
) is dependent on the maximum operating junction temperature (T
MAX
), and the junction-to ambient thermal resistance of the package in the application (θJA), as given by the following equation: T
MAX
). In most applications there is little need for the full power dissipation capability of this advanced package. Under these circumstances, no vias would be
MAX
required and the thermal resistances would be 104 °C/W for the 16L TSSOP and 86.7 °C/W for the 20L TSSOP. It is possible to conservatively interpolate between
the full via count thermal resistance and the no via count thermal resistance with a straight line to get a thermal resistance for any number of vias in between
these two limits.
Note 5: Refer to National’s packaging website for more detailed information and mounting techniques. http://www.national.com/packaging/
Note 6: Human Body Model, applicable std. JESD22-A114-C. Machine Model, applicable std. JESD22-A115-A. Field Induced Charge Device Model, applicable
std. JESD22-C101-C.
Note 7: All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits are 100%
production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used
to calculate Average Outgoing Quality Level (AOQL).
Note 8: Typical numbers are at 25°C and represent the most likely norm.
Note 9: These electrical parameters are guaranteed by design, and are not verified by test.
= 125°C), the maximum power dissipation of the device in the application (P
J-MAX-OP
A-MAX
= T
J-MAX-OP
Units
°C/W
°C/W
– (θJA × P
A-
D-
D-
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Typical Performance Characteristics Taken from the standard evaluation board
LM3421, LM3423
Boost Efficiency vs. Input Voltage
(6 White LEDs, ~20V at 1A)
Boost Efficiency vs. Input Voltage
(11 White LEDs, ~46V at 1A)
Buck/Boost Efficiency vs. Input Voltage
(6 White LEDs, ~20V at 1A)
30067322
30067323
Average LED Current vs. PWM DIM Duty Cycle
(VIN = 12V, 6 White LEDs, ~20V at 1A)
30067321
LED Current vs. Ambient Temperature
(VIN = 12V, Nominal LED Current Set at 1A)
30067319
30067318
LED Current vs. Input Voltage
(Boost, 6 White LEDs, ~20V at 1A)
30067324
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