National Semiconductor LM3146 Technical data
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LM3146 High Voltage Transistor Array
LM3146 High Voltage Transistor Array
February 1995
General Description
The LM3146 consists of five high voltage general purpose
silicon NPN transistors on a common monolithic substrate.
Two of the transistors are internally connected to form a
differentially-connected pair. The transistors are well suited
to a wide variety of applications in low power system in the
dc through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they
provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The
LM3146 is supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature
range.
Connection Diagram
Dual-In-Line and Small Outline Packages
Features
Y
High voltage matched pairs of transistors, VBEmatched
g
5 mV, input offset current 2 mA max at I
Y
Five general purpose monolithic transistors
Y
Operation from dc to 120 MHz
Y
Wide operating current range
Y
Low noise figure 3.2 dB typ at 1 kHz
e
1mA
C
Applications
Y
General use in all types of signal processing systems
operating anywhere in the frequency range from dc to
VHF
Y
Custom designed differential amplifiers
Y
Temperature compensated amplifiers
Top View
TL/H/7959– 1
Order Number LM3146M or LM3146N
See NS Package Number M14A or N14A
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
TL/H/7959
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
CEO
b
b
LM3146 Units
30 V
40 V
50 mA
40 toa85§C
65 toa150§C
Power Dissipation: Each transistor
e
T
25§Cto55§C 300 mW
A
l
T
55§C Derate at 6.67 mW/§C
A
Power Dissipation: Total Package
e
T
25§C 500 mW
A
l
T
25§C Derate at 6.67 mW/§C
A
Collector to Emitter Voltage, V
Collector to Base Voltage, V
CBO
Collector to Substrate Voltage,
V
(Note 1) 40 V
CIO
Emitter to Base Voltage, V
(Note 2) 5 V
Collector to Current, I
EBO
C
Operating Temperature Range
Storage Temperature Range
Soldering Information
Dual-In-Line Package
Soldering (10 seconds) 260
Small Outline Package
Vapor Phase (60 seconds) 215
Infrared (15 seconds) 220
See AN-450 ‘‘Surface Mounting Methods and Their Effect
on Product Reliability’’ for other methods of soldering surface mount devices.
C
§
C
§
C
§
DC Electrical Characteristics T
Symbol Parameter Conditions
e
25§C
A
Limits
Units
Min Typ Max
V
(BR)CBO
V
(BR)CEO
V
(BR)CIO
V
(BR)EBO
I
CBO
I
CEO
h
FE
IB1–I
B2
V
BE
V
BE1–VBE2
Collector to Base Breakdown Voltage I
Collector to Emitter Breakdown Voltage I
Collector to Substrate Breakdown I
Voltage I
Emitter to Base Breakdown Voltage
(Note 2)
Collector Cutoff Current V
Collector Cutoff Current V
Static Forward Current Transfer I
Ratio (Static Beta) I
Input Offset Current for Matched I
Pair Q1 and Q2 V
Base to Emitter Voltage I
Magnitude of Input Offset Voltage V
for Differential Pair
DVBE/DT Temperature Coefficient of Base V
to Emitter Voltage
V
CE(SAT)
Collector to Emitter Saturation I
Voltage
DV10/DT Temperature Coefficient of Input I
Offset Voltage
Note 1: The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors,
the substrate terminal should be maintained at either dc or signal (ac) ground. A suitable bypass capacitor can be used to establish a signal ground.
Note 2: If the transistors are forced into zener breakdown (V
Note 3: See curve.
(BR)EBO
e
10 mA, I
C
e
1 mA, I
C
e
CI
e
0
E
e
I
0, I
C
e
CB
e
CE
e
10 mA, V
C
e
1 mA, V
C
e
I
10 mA, V
C
e
C1
e
CE
e
1 mA, V
C
e
CE
e
CE
e
10 mA, I
C
e
1 mA, V
C
), degradation of forward transfer current ratio (hFE) can occur.
e
04072 V
E
e
03056 V
B
10 mA, I
e
0,
B
e
10 mA57 V
E
e
10V, I
10V, I
1
C2
5V
5V, I
5V, I
0 0.002 100 nA
E
e
0 (Note 3) 5 mA
B
e
CE
e
5V 30 100
CE
e
CE
e
1 mA,
e
3V 0.63 0.73 0.83 V
CE
e
1mA
E
e
1mA
E
e
1mA
B
e
5V
CE
40 72 V
5V 85
5V 90
0.3 2 mA
0.48 5 mV
b
1.9 mV/§C
0.33 V
1.1 mV/
C
§
2
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