Datasheet LM3045, LM3046, LM3086 Datasheet (National Semiconductor)

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LM3045/LM3046/LM3086 Transistor Arrays

LM3045/LM3046/LM3086 Transistor Arrays

December 1994

General Description

The LM3045, LM3046 and LM3086 each consist of five
general purpose silicon NPN transistors on a common
monolithic substrate. Two of the transistors are internally
connected to form a differentially-connected pair. The tran­sistors are well suited to a wide variety of applications in low
power system in the DC through VHF range. They may be
used as discrete transistors in conventional circuits howev­er, in addition, they provide the very significant inherent inte­grated circuit advantages of close electrical and thermal
matching. The LM3045 is supplied in a 14-lead cavity dual­in-line package rated for operation over the full military tem­perature range. The LM3046 and LM3086 are electrically
identical to the LM3045 but are supplied in a 14-lead mold­ed dual-in-line package for applications requiring only a lim­ited temperature range.

Schematic and Connection Diagram

Dual-In-Line and Small Outline Packages

Features

Y

Two matched pairs of transistors
V

matchedg5mV

BE

Input offset current 2 mA max at I

Y

Five general purpose monolithic transistors

Y

Operation from DC to 120 MHz

Y

Wide operating current range

Y

Low noise figure 3.2 dB typ at 1 kHz

Y

Full military
temperature range (LM3045)

e

1mA

C

b

55§Ctoa125§C

Applications

Y

General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF

Y

Custom designed differential amplifiers

Y

Temperature compensated amplifiers

Top View

TL/H/7950– 1

Order Number LM3045J, LM3046M, LM3046N or LM3086N

See NS Package Number J14A, M14A or N14A

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/H/7950

Absolute Maximum Ratings (T

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Power Dissipation:

e

T

25§C 300 750 300 750 mW

A

e

T

25§Cto55§C 300 750 mW

A

l

T

55§C Derate at 6.67 mW/§C

A

e

T

25§Cto75§C 300 750 mW

A

l

T

75§C Derate at 8 mW/§C

A

Collector to Emitter Voltage, V

Collector to Base Voltage, V

Collector to Substrate Voltage, V

Emitter to Base Voltage, V

Collector Current, I

Operating Temperature Range

Storage Temperature Range

Soldering Information

Dual-In-Line Package Soldering (10 Sec.) 260

Small Outline Package
Vapor Phase (60 Seconds) 215

Infrared (15 Seconds) 220
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices.

C

EBO

CEO

CBO

(Note 1) 20 20 V

CIO

Electrical Characteristics (T

Parameter Conditions LM3045, LM3046 LM3086 Units

Collector to Base Breakdown Voltage (V

Collector to Emitter Breakdown Voltage (V

Collector to Substrate Breakdown I
Voltage (V

Emitter to Base Breakdown Voltage (V

Collector Cutoff Current (I

Collector Cutoff Current (I

Static Forward Current Transfer V
Ratio (Static Beta) (hFE)

Input Offset Current for Matched V
Pair Q

and Q

1

Base to Emitter Voltage (VBE)V

Magnitude of Input Offset Voltage for V
Differential Pair

Magnitude of Input Offset Voltage for Isolated V
Transistors

b

V

l

BE5

Temperature Coefficient of Base to V
Emitter Voltage

Collector to Emitter Saturation Voltage (V

Temperature Coefficient of V
Input Offset Voltage

Note 1: The collector of each transistor of the LM3045, LM3046, and LM3086 is isolated from the substrate by an integral diode. The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

(BR)CIO

l

V

BE3

)

)V

CBO

)V

CEO

b

I

I

l

2

V

l

V

BE3

l

O1

IO2

b

V

BE1

b

l

BE2

V

V

l,l

BE4

BE4

l

DV

BE

DT

#

J

DV

10

DT

#

J

(BR)CBO

(BR)CEO)IC

(BR)EBO

b

V

, 0.45 5 mV

l

BE5

CE(SAT)

e

25§C)

A

LM3045 LM3046/LM3086

Each Total Each Total Units

Transistor Package Transistor Package

15 15 V

20 20 V

55V

50 50 mA

b

55§Ctoa125§C

b

65§Ctoa150§C

C 260§C

§

e

25§C unless otherwise specified)

A

e

)I

C

e

e

C

)I

10 mA, I

E

CB

CE

CE

CE

CE

CE

CE

CE

e

)I

B

CE

10 mA, I

1 mA, I

10 mA, I

e

e

e

e

e

e

e

e

1 mA, I

e

e

E

e

0 1524 1524 V

B

e

CI

e

05757V

C

e

10V, I

E

e

10V, I

B

3V

3V, I

3V

3V, I

3V, I

3V, I

3V, I

e

I

C

e

I

C

e

I

C

e

1mA

C

e

I

E

Ð

e

I

E

e

1mA

C

e

1mA

C

e

1mA

C

e

10 mA 0.23 0.23 V

C

e

1mA

C

2

Min Typ Max Min Typ Max

0 2060 2060 V

0

0 0.002 40 0.002 100 nA

0 0.5 5 mA

1mA
10 mA

20 60 20 60 V

10 mA
1 mA 40 100 40 100

10 mAÐ

b

40§Ctoa85§C

b

65§Ctoa85§C

C

§

C

§

Limits Limits

100 100

54 54

0.3 2 mA

0.715 0.715

0.800 0.800

0.45 5 mV

b

1.9

1.1 mV/§C

b

1.9 mV/

V

C

§

Electrical Characteristics (Continued)

Parameter Conditions Min Typ Max Units

Low Frequency Noise Figure (NF) fe1 kHz, V

e

100 mA, R

I

C

CE

e

3V,

e

1kX

S

3.25 dB

LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS

Forward Current Transfer Ratio (hfe)f

e

1 kHz, V

e

1 mA (LM3086)

I

C

e

3V, 110 (LM3045, LM3046)

CE

Short Circuit Input Impednace (hie) 3.5 kX

Open Circuit Output Impedance (hoe) 15.6 mmho

b

Open Circuit Reverse Voltage Transfer Ratio (hre) 1.8x10

4

ADMITTANCE CHARACTERISTICS

Forward Transfer Admittance (Yfe)f

Input Admittance (Yie)

e

1 MHz, V

e

I

1mA

C

e

3V, 31bj 1.5

CE

0.3

a

J 0.04

Output Admittance (Yoe) 0.001aj 0.03

Reverse Transfer Admittance (Yre) See Curve

e

Gain Bandwidth Product (fT)V

Emitter to Base Capacitance (CEB)V

Collector to Base Capacitance (CCB)V

Collector to Substrate Capacitance (CCI)V

CE

EB

CB

CS

e

3V, I

3 mA 300 550

C

e

e

3V, I

0 0.6 pF

E

e

e

3V, I

0 0.58 pF

C

e

e

3V, I

0 2.8 pF

C

Typical Performance Characteristics

Typical Collector To Base
Cutoff Current vs Ambient
Temperature for Each
Transistor

Typical Input Offset Current Offset Voltage for Differential
for Matched Transistor Pair
Q1Q2vs Collector Current

Typical Collector To Emitter
Cutoff Current vs Ambient
Temperature for Each
Transistor

Typical Static Base To Emitter
Voltage Characteristic and Input

Pair and Paired Isolated
Transistors vs Emitter Current

Typical Static Forward
Current-Transfer Ratio and
Beta Ratio for Transistors Q
and Q2vs Emitter Current

1

TL/H/7950– 2

TL/H/7950– 3

3

Typical Performance Characteristics (Continued)

Typical Base To Emitter
Voltage Characteristic for
Each Transistor vs Ambient
Temperature

Typical Noise Figure vs
Collector Current

Typical Input Offset Voltage
Characteristics for Differential
Pair and Paired Isolated
Transistors vs Ambient
Temperature

Typical Noise Figure vs
Collector Current

Typical Noise Figure vs
Collector Current

TL/H/7950– 4

Typical Normalized Forward
Current Transfer Ratio, Short
Circuit Input Impedance,
Open Circuit Output Impedance,
and Open Circuit Reverse
Voltage Transfer Ratio vs
Collector Current

Typical Forward Transfer
Admittance vs Frequency

Typical Input Admittance
vs Frequency

4

TL/H/7950– 5

Typical Output Admittance
vs Frequency

TL/H/7950– 6

Typical Performance Characteristics (Continued)

Typical Reverse Transfer
Admittance vs Frequency

Physical Dimensions inches (millimeters)

Typical Gain-Bandwidth
Product vs Collector Current

TL/H/7950– 7

Ceramic Dual-In-Line Package (J)

Order Number LM3045J

NS Package Number J14A

5

Physical Dimensions inches (millimeters) (Continued)

Molded Small Outline Package (M)

Order Number LM3046M

NS Package Number M14A

LM3045/LM3046/LM3086 Transistor Arrays

Molded Dual-In-Line Package (N)

Order Number LM3046N or LM3086N

NS Package Number N14A

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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

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systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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