National Semiconductor LM2734Z, LM2734ZQ Technical data

LM2734Z/LM2734ZQ Thin SOT23 1A Load Step-Down DC-DC Regulator
LM2734Z/LM2734ZQ Thin SOT23 1A Load Step-Down DC-DC Regulator
June 12, 2008

General Description

The LM2734Z regulator is a monolithic, high frequency, PWM step-down DC/DC converter assembled in a 6-pin Thin SOT23 and LLP non pull back package. It provides all the active functions to provide local DC/DC conversion with fast transient response and accurate regulation in the smallest possible PCB area.
With a minimum of external components and online design support through WEBENCH®, the LM2734Z is easy to use. The ability to drive 1A loads with an internal 300m NMOS switch using state-of-the-art 0.5µm BiCMOS technology re­sults in the best power density available. The world class control circuitry allows for on-times as low as 13ns, thus sup­porting exceptionally high frequency conversion over the en­tire 3V to 20V input operating range down to the minimum output voltage of 0.8V. Switching frequency is internally set to 3MHz, allowing the use of extremely small surface mount inductors and chip capacitors. Even though the operating fre­quency is very high, efficiencies up to 85% are easy to achieve. External shutdown is included, featuring an ultra-low stand-by current of 30nA. The LM2734Z utilizes current-mode control and internal compensation to provide high-perfor­mance regulation over a wide range of operating conditions. Additional features include internal soft-start circuitry to re­duce inrush current, pulse-by-pulse current limit, thermal shutdown, and output over-voltage protection.

Features

Thin SOT23-6 package, or 6 lead LLP package
3.0V to 20V input voltage range
0.8V to 18V output voltage range
1A output current
3MHz switching frequency
300m NMOS switch
30nA shutdown current
0.8V, 2% internal voltage reference
Internal soft-start
Current-Mode, PWM operation
Thermal shutdown
LM2734ZQ is AEC-Q100 Grade 1 qualified and is
manufactured on an Automotive Grade Flow

Applications

DSL Modems
Local Point of Load Regulation
Battery Powered Devices
USB Powered Devices
Automotive

Typical Application Circuit

WEBENCH™ is a trademark of Transim.
20130301
Efficiency vs Load Current
VIN = 5V, V
OUT
= 3.3V
20130345
© 2008 National Semiconductor Corporation 201303 www.national.com

Connection Diagrams

LM2734Z/LM2734ZQ
NS Package Number MK06A
6-Lead TSOT
20130305
6-Lead LLP (3mm x 3mm)
NS Package Number SDE06A
20130360

Ordering Information

Order Number Package Type NSC Package
Drawing
LM2734ZMK
LM2734ZMKX SFTB 3000 Units on Tape and Reel
LM2734ZQMKE SVBB 250 Units on Tape and Reel AEC-Q100 Grade 1
TSOT-6 MK06A
LM2734ZQMK SVBB 1000 Units on Tape and Reel
LM2734ZQMKX SVBB 3000 Units on Tape and Reel
LM2734ZSD
LM2734ZSDX L163B 4500 Units on Tape and Reel
LM2734ZQSDE L238B 250 Units on Tape and Reel AEC-Q100 Grade 1
6-Lead LLP SDE06A
LM2734ZQSD L238B 1000 Units on Tape and Reel
LM2734ZQSDX L238B 4500 Units on Tape and Reel
*Automotive Grade (Q) product incorporates enhanced manufacturing and support processes for the automotive market, including defect detection methodologies. Reliability qualification is compliant with the requirements and temperature grades defined in the AEC-Q100 standard. Automotive grade products are identified with the letter Q. For more information go to http://www.national.com/automotive.
Package
Supplied As Features
Marking
SFTB 1000 Units on Tape and Reel
Qualified. Automotive-Grade
Production Flow*
L163B 1000 Units on Tape and Reel
Qualified. Automotive-Grade
Production Flow*

Pin Descriptions

Pin Name Function
1 BOOST Boost voltage that drives the internal NMOS control switch. A
bootstrap capacitor is connected between the BOOST and SW pins.
2 GND Signal and Power ground pin. Place the bottom resistor of the
feedback network as close as possible to this pin for accurate regulation.
3 FB Feedback pin. Connect FB to the external resistor divider to set output
voltage.
4 EN Enable control input. Logic high enables operation. Do not allow this
pin to float or be greater than V
5 V
IN
Input supply voltage. Connect a bypass capacitor to this pin.
6 SW Output switch. Connects to the inductor, catch diode, and bootstrap
capacitor.
DAP GND The Die Attach Pad is internally connected to GND
+ 0.3V.
IN
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LM2734Z/LM2734ZQ

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Soldering Information Infrared/Convection Reflow (15sec) 220°C Wave Soldering Lead Temp. (10sec) 260°C
Distributors for availability and specifications.
V
IN
-0.5V to 24V SW Voltage -0.5V to 24V Boost Voltage -0.5V to 30V Boost to SW Voltage -0.5V to 6.0V FB Voltage -0.5V to 3.0V EN Voltage -0.5V to (VIN + 0.3V)
Junction Temperature 150°C ESD Susceptibility (Note 2) 2kV

Operating Ratings (Note 1)

V
IN
SW Voltage -0.5V to 20V Boost Voltage -0.5V to 25V Boost to SW Voltage 1.6V to 5.5V Junction Temperature Range −40°C to +125°C
Thermal Resistance θJA (Note 3)
TSOT23–6 118°C/W
3V to 20V
Storage Temp. Range -65°C to 150°C

Electrical Characteristics

Specifications with standard typeface are for TJ = 25°C, and those in boldface type apply over the full Operating Temperature Range (TJ = -40°C to 125°C). VIN = 5V, V
guaranteed by design, test, or statistical analysis.
Symbol Parameter Conditions
V
ΔVFB/ΔV
I
Feedback Voltage
FB
Feedback Voltage Line
IN
Regulation
Feedback Input Bias Current
FB
Undervoltage Lockout
UVLO
Undervoltage Lockout
UVLO Hysteresis 0.30 0.44 0.62
F
D
D
R
DS(ON)
MAX
I
I
Switching Frequency
SW
Maximum Duty Cycle
Minimum Duty Cycle
MIN
Switch ON Resistance
Switch Current Limit V
CL
Quiescent Current Switching 1.5 2.5 mA
Q
Quiescent Current (shutdown) VEN = 0V
I
BOOST
V
EN_TH
I
EN
I
SW
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see Electrical Characteristics.
Note 2: Human body model, 1.5k in series with 100pF.
Note 3: Thermal shutdown will occur if the junction temperature exceeds 165°C. The maximum power dissipation is a function of T
maximum allowable power dissipation at any ambient temperature is PD = (T board with 2oz. copper on 4 layers in still air. For a 2 layer board using 1 oz. copper in still air, θJA = 204°C/W.
Note 4: Guaranteed to National’s Average Outgoing Quality Level (AOQL).
Note 5: Typicals represent the most likely parametric norm.
Boost Pin Current
Shutdown Threshold Voltage VEN Falling
Enable Threshold Voltage VEN Rising 1.8
Enable Pin Current Sink/Source
Switch Leakage
- VSW = 5V unless otherwise specified. Datasheet min/max specification limits are
BOOST
VIN = 3V to 20V
Sink/Source
VIN Rising
VIN Falling
Min
(Note 4)
0.784 0.800 0.816 V
0.01 % / V
10 250 nA
2.74 2.90
2.0 2.3
2.2 3.0 3.6 MHz
78 85 %
Typ
(Note 5)
Max
(Note 4)
8
V
- VSW = 3V
BOOST
(TSOT Package)
V
- VSW = 3V
BOOST
(LLP Package)
- VSW = 3V 1.2 1.7 2.5 A
BOOST
(Switching)
300 600
340 650
30
4.25 6 mA
0.4
– TA)/θJA . All numbers apply for packages soldered directly onto a 3” x 3” PC
J(MAX)
10
40
, θJA and TA . The
J(MAX)
Units
V
%
m
m
nA
V
nA
nA
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Typical Performance Characteristics All curves taken at V

TA = 25°C, unless specified otherwise.
= 5V, V
IN
- VSW = 5V, L1 = 2.2 µH and
BOOST
Efficiency vs Load Current
LM2734Z/LM2734ZQ
Efficiency vs Load Current
V
V
OUT
OUT
= 1.5V
= 5V
20130336
Efficiency vs Load Current
V
= 3.3V
OUT
20130351
Oscillator Frequency vs Temperature
20130337
Line Regulation
V
= 1.5V, I
OUT
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= 500mA
OUT
20130354
Line Regulation
V
= 3.3V, I
OUT
= 500mA
OUT
20130327
20130355

Block Diagram

LM2734Z/LM2734ZQ

Application Information

THEORY OF OPERATION

The LM2734Z is a constant frequency PWM buck regulator IC that delivers a 1A load current. The regulator has a preset switching frequency of 3MHz. This high frequency allows the LM2734Z to operate with small surface mount capacitors and inductors, resulting in a DC/DC converter that requires a min­imum amount of board space. The LM2734Z is internally compensated, so it is simple to use, and requires few external components. The LM2734Z uses current-mode control to reg­ulate the output voltage.
. When the PWM comparator output goes high, the out-
REF
put switch turns off until the next switching cycle begins.
20130306

FIGURE 1.

During the switch off-time, inductor current discharges through Schottky diode D1, which forces the SW pin to swing below ground by the forward voltage (VD) of the catch diode. The regulator loop adjusts the duty cycle (D) to maintain a constant output voltage.
20130307
FIGURE 2. LM2734Z Waveforms of SW Pin Voltage and
Inductor Current
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BOOST FUNCTION

Capacitor C erate a voltage V to the internal NMOS control switch. To properly drive the in­ternal NMOS switch during its on-time, V least 1.6V greater than VSW. Although the LM2734Z will op-
and diode D2 in Figure 3 are used to gen-
BOOST
BOOST
. V
- VSW is the gate drive voltage
BOOST
needs to be at
BOOST
erate with this minimum voltage, it may not have sufficient gate drive to supply large values of output current. Therefore, it is recommended that V
LM2734Z/LM2734ZQ
VSW for best efficiency. V maximum operating limit of 5.5V.
5.5V > V
– VSW > 2.5V for best performance.
BOOST
FIGURE 3. V
be greater than 2.5V above
BOOST
– VSW should not exceed the
BOOST
Charges C
OUT
BOOST
When the LM2734Z starts up, internal circuitry from the BOOST pin supplies a maximum of 20mA to C current charges C switch on. The BOOST pin will continue to source current to C
until the voltage at the feedback pin is greater than
BOOST
0.76V. There are various methods to derive V
1.
From the input voltage (VIN)
2.
From the output voltage (V
3.
From an external distributed voltage rail (V
4.
From a shunt or series zener diode
to a voltage sufficient to turn the
BOOST
:
BOOST
)
OUT
In the Simplifed Block Diagram of Figure 1, capacitor C
and diode D2 supply the gate-drive current for the
BOOST
NMOS switch. Capacitor C VIN. During a normal switching cycle, when the internal NMOS control switch is off (T VIN minus the forward voltage of D2 (V
OFF
current in the inductor (L) forward biases the Schottky diode D1 (V
). Therefore the voltage stored across C
FD1
V
- VSW = VIN - V
BOOST
is charged via diode D2 by
BOOST
) (refer to Figure 2), V
), during which the
FD2
+ V
FD2
FD1
When the NMOS switch turns on (TON), the switch pin rises to
forcing V V
BOOST
VSW = VIN – (R
to rise thus reverse biasing D2. The voltage at
BOOST
is then
V
= 2VIN – (R
BOOST
DSON
x IL),
DSON
x IL) – V
FD2
+ V
which is approximately
2VIN - 0.4V
for many applications. Thus the gate-drive voltage of the NMOS switch is approximately
VIN - 0.2V
An alternate method for charging C the output as shown in Figure 3. The output voltage should
is to connect D2 to
BOOST
be between 2.5V and 5.5V, so that proper gate voltage will be
BOOST
)
EXT
BOOST
BOOST
FD1
20130308
. This
equals
is
applied to the internal switch. In this circuit, C a gate drive voltage that is slightly less than V
In applications where both VIN and V
5.5V, or less than 3V, C these voltages. If VIN and V C
can be charged from VIN or V
BOOST
age by placing a zener diode D3 in series with D2, as shown
cannot be charged directly from
BOOST
OUT
are greater than
OUT
are greater than 5.5V,
minus a zener volt-
OUT
BOOST
OUT
provides
.
in Figure 4. When using a series zener diode from the input, ensure that the regulation of the input supply doesn’t create a voltage that falls outside the recommended V
(V
– VD3) < 5.5V
INMAX
(V
– VD3) > 1.6V
INMIN
FIGURE 4. Zener Reduces Boost Voltage from V
BOOST
voltage.
20130309
IN
An alternative method is to place the zener diode D3 in a shunt configuration as shown in Figure 5. A small 350mW to 500mW 5.1V zener in a SOT-23 or SOD package can be used for this purpose. A small ceramic capacitor such as a 6.3V,
0.1µF capacitor (C4) should be placed in parallel with the zener diode. When the internal NMOS switch turns on, a pulse of current is drawn to charge the internal NMOS gate capac­itance. The 0.1 µF parallel shunt capacitor ensures that the V
voltage is maintained during this time.
BOOST
Resistor R3 should be chosen to provide enough RMS current to the zener diode (D3) and to the BOOST pin. A recom­mended choice for the zener current (I current I of the NMOS control switch and varies typically according to
into the BOOST pin supplies the gate current
BOOST
) is 1 mA. The
ZENER
the following formula:
I
= (D + 0.5) x (V
BOOST
where D is the duty cycle, V I
is in milliamps. V
BOOST
anode of the boost diode (D2), and VD2 is the average forward
ZENER
is the voltage applied to the
ZENER
voltage across D2. Note that this formula for I ical current. For the worst case I by 25%. In that case, the worst case boost current will be
I
BOOST-MAX
= 1.25 x I
– VD2) mA
ZENER
and VD2 are in volts, and
gives typ-
BOOST
, increase the current
BOOST
BOOST
R3 will then be given by
R3 = (VIN - V
For example, let VIN = 10V, V = 1mA, and duty cycle D = 50%. Then
I
= (0.5 + 0.5) x (5 - 0.7) mA = 4.3mA
BOOST
ZENER
) / (1.25 x I
ZENER
BOOST
+ I
ZENER
)
= 5V, VD2 = 0.7V, I
ZENER
R3 = (10V - 5V) / (1.25 x 4.3mA + 1mA) = 787
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