National Semiconductor DS90UR241, DS90UR124 Technical data

DS90UR241/DS90UR124 5-43 MHz DC-Balanced 24-Bit LVDS Serializer and Deserializer
User selectable clock edge for parallel data on both

General Description

The DS90UR241/124 Chipset translates a 24-bit parallel bus into a fully transparent data/control LVDS serial stream with embedded clock information. This single serial stream sim­plifies transferring a 24-bit bus over PCB traces and cable by eliminating the skew problems between parallel data and clock paths. It saves system cost by narrowing data paths that in turn reduce PCB layers, cable width, and connector size and pins.
The DS90UR241/124 incorporates LVDS signaling on the high-speed I/O. LVDS provides a low power and low noise environment for reliably transferring data over a serial trans­mission path. By optimizing the Serializer output edge rate for the operating frequency range EMI is further reduced.
In addition the device features pre-emphasis to boost signals over longer distances using lossy cables. Internal DC bal­anced encoding/decoding is used to support AC-Coupled interconnects. Using National Semiconductor’s proprietary random lock, the Serializer’s parallel data are randomized to the Deserializer without the need of REFCLK.

Features

5 MHz–43 MHz embedded clock and DC-Balanced 24:1
and 1:24 data transmission User defined pre-emphasis driving ability through external
resistor on LVDS outputs and capable to drive up to 10 meters shielded twisted-pair cable
Transmitter and Receiver Supports AC-coupling data transmission
Individual power-down controls for both Transmitter and
Receiver Embedded clock CDR (Clock and Data Recovery) on
Receiver and no source of reference clock required All codes RDL (random data lock) to support live-
pluggable applications LOCK output flag to ensure data integrity at Receiver side
Balanced T
Receiver side Adjustable PTO (progressive turn-on) LVCMOS outputs
on Receiver to minimize EMI and SSO effects @Speed BIST to validate LVDS transmission path
All LVCMOS inputs and control pins have internal
pulldown On-chip filters for PLLs on Transmitter and Receiver
48-pin TQFP package for Transmitter and 64-pin TQFP
package for Receiver Pure CMOS .35 µm process
Power supply range 3.3V ± 10%
Temperature range –40°C to +105°C
Greater than 8 kV HBM ESD structure
Meets ISO 10605 ESD and AEC-Q100 compliance
Backward compatible mode with DS90C241/DS90C124
SETUP/THOLD
between RCLK and RDATA on
DS90UR241/DS90UR124 5-43 MHz DC-Balanced 24-Bit LVDS Serializer and Deserializer
January 8, 2008

Block Diagram

TRI-STATE® is a registered trademark of National Semiconductor Corporation.
© 2008 National Semiconductor Corporation 201945 www.national.com
20194501

Absolute Maximum Ratings (Note )

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage (VDD)
LVCMOS Input Voltage −0.3V to (VDD +0.3V)
LVCMOS Output Voltage −0.3V to (V
LVDS Receiver Input Voltage −0.3V to +3.9V LVDS Driver Output Voltage −0.3V to +3.9V
DS90UR241/DS90UR124
LVDS Output Short Circuit Duration 10 ms Junction Temperature +150°C Storage Temperature −65°C to +150°C Lead Temperature
−0.3V to +4V
+0.3V)
DD
DS90UR124 − 64L TQFP
   θ
   θ
JA
JC
42.8 (4L*); 67.2 (2L*)°C/W
14.6°C/W *JEDEC ESD Rating (HBM)
ESD Rating (ISO10605)
RD = 2 kΩ, CS = 330 pF
Contact Discharge (D
Air Discharge (D
OUT+
RD = 2 kΩ, CS = 330 pF
Contact Discharge (R
Air Discharge (R
IN+
DS90UR241 meets ISO 10605
, D
OUT−
)
)
OUT+
, D
OUT−
DS90UR124 meets ISO 10605
, R
)
IN+
IN−
, R
)
IN−
(Soldering, 4 seconds) +260°C Maximum Package Power Dissipation Capacity Package De-rating:
1/θJA °C/W above +25°C
DS90UR241 − 48L TQFP
   θ
   θ
JA
JC
45.8 (4L*); 75.4 (2L*) °C/W
21.0°C/W

Recommended Operating Conditions

Min Nom Max Units
Supply Voltage (VDD) 3.0 3.3 3.6 V
Operating Free Air Temperature (TA)
Clock Rate 5 43 MHz Supply Noise ±100 mV
−40 +25 +105 °C

Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Pin/Freq. Min Typ Max Units
LVCMOS DC SPECIFICATIONS
V
IH
V
IL
V
CL
I
IN
V
OH
V
OL
I
OS
I
OZ
High Level Input Voltage Tx: DIN[0:23], TCLK,
Low Level Input Voltage
Input Clamp Voltage ICL = −18 mA
TPWDNB, DEN, TRFB, RAOFF, VODSEL, RES0. Rx: RPWDNB, RRFB, REN, PTOSEL, BISTEN, BISTM, SLEW, RES0.
Input Current VIN = 0V or 3.6V Tx: DIN[0:23], TCLK,
TPWDNB, DEN, TRFB, RAOFF, RES0. Rx: RRFB, REN, PTOSEL, BISTEN, BISTM, SLEW, RES0.
Rx: RPWDNB −20 ±5 +20 µA
High Level Output Voltage IOH = −2 mA, SLEW = L
IOH = −4 mA, SLEW = H
Rx: R
[0:23], RCLK,
OUT
LOCK, PASS.
Low Level Output Voltage IOL = +2 mA, SLEW = L
IOL = +4 mA, SLEW = H
Output Short Circuit Current V
TRI-STATE® Output Current RPWDNB, REN = 0V,
OUT
V
OUT
= 0V
= 0V or V
DD
Rx: R
[0:23], RCLK,
OUT
LOCK, PASS.
2.0
V
DD
GND 0.8 V
−0.8 −1.5 V
−10 ±2 +10 µA
2.3 3.0
V
DD
GND 0.33 0.5 V
−40 −70 −110 mA
−30 ±0.4 +30 µA
±8 kV
±10 kV
±30 kV
±10 kV
±30 kV
P-P
V
V
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Symbol Parameter Conditions Pin/Freq. Min Typ Max Units
LVDS DC SPECIFICATIONS
V
TH
V
TL
I
IN
V
OD
ΔV
V
OS
ΔV
I
OS
I
OZ
Differential Threshold High
VCM = +1.8V Rx: R
Voltage
Differential Threshold Low Voltage
Input Current VIN = +2.4V, VDD = 3.6V
VIN = 0V, VDD = 3.6V
Output Differential Voltage (D
)–(D
OUT+
Output Differential Voltage
OD
Unbalance
Offset Voltage
OUT−
)
RL = 100Ω, w/o pre­emphasis (Figure 10)
RL = 100Ω, w/o pre-emphasis
RL = 100Ω, w/o pre-emphasis
Offset Voltage Unbalance
OS
RL = 100Ω, w/o pre-emphasis
Output Short Circuit Current D
= 0V, DIN = H,
OUT
TPWDNB = 2.4V
TRI-STATE Output Current TPWDNB = 0V,
D
= 0V OR V
OUT
TPWDNB = 2.4V, DEN = 0V D
= 0V OR V
OUT
, R
IN+
IN−
+50 mV
−50 mV
±100 ±250 µA
±100 ±250 µA
VODSEL = L Tx: D
OUT+
, D
OUT−
380 500 630
VODSEL = H 500 900 1100
VODSEL = L
VODSEL = H
VODSEL = L
VODSEL = H
VODSEL = L
VODSEL = H
1 50 mV
1.00 1.25 1.50 V
3 50 mV
VODSEL = L −2.0 −5.0 −8.0
VODSEL = H −4.5 −7.9 −14.0
DD
DD
−15 ±1 +15 µA
−15 ±1 +15 µA
mV
mA
TPWDNB = 2.4V, DEN = 2.4V, D
= 0V OR V
OUT
DD
−15 ±1 +15 µA
NO LOCK (NO TCLK)
SER/DES SUPPLY CURRENT (DVDD*, PVDD* AND AVDD* PINS) *DIGITAL, PLL, AND ANALOG VDDS
I
DDT
I
DDTZ
I
DDR
Serializer Total Supply Current (includes load current)
Serializer Supply Current Power-down
Deserializer Total Supply Current (includes load current)
RL = 100Ω, PRE = OFF, RAOFF = H, VODSEL = L
RL = 100Ω, PRE = 12 kΩ, RAOFF = H, VODSEL = L
RL = 100Ω, PRE = OFF, RAOFF = H, VODSEL = H
TPWDNB = 0V (All other LVCMOS Inputs = 0V)
CL = 4 pF, SLEW = H
f = 43 MHz, CHECKER BOARD Pattern (Figure 1)
f = 43 MHz, RANDOM pattern
f = 43 MHz, CHECKER BOARD Pattern LVCMOS
60 85 mA
65 90 mA
66 90 mA
45 µA
85 105 mA
Output (Figure 2)
CL = 4 pF, SLEW = H
f = 43 MHz, RANDOM pattern
80 100 mA
LVCMOS Output
I
DDRZ
Deserializer Supply Current Power-down
RPWDNB = 0V (All other LVCMOS Inputs = 0V, R
IN+/RIN-
= 0V)
50 µA
DS90UR241/DS90UR124
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Serializer Input Timing Requirements for TCLK

Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
t
TCP
t
TCIH
t
TCIL
t
CLKT
t
JIT
DS90UR241/DS90UR124
Transmit Clock Period (Figure 5)
Transmit Clock High Time
Transmit Clock Low Time
TCLK Input Transition Time (Note 8), (Figure 4)
TCLK Input Jitter (Note 9)
23.25 T 200 ns
0.3T 0.5T 0.7T ns
0.3T 0.5T 0.7T ns
2.5 ns
±100 ps

Serializer Switching Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
t
LLHT
t
LHLT
t
DIS
t
DIH
t
HZD
t
LZD
t
ZHD
t
ZLD
t
PLD
t
SD
TxOUT_E_O TxOUT_Eye_Opening.
LVDS Low-to-High Transition Time
LVDS High-to-Low Transition Time
DIN (0:23) Setup to TCLK
DIN (0:23) Hold from TCLK
D
± HIGH to TRI-STATE Delay
OUT
D
± LOW to TRI-STATE Delay
OUT
D
± TRI-STATE to HIGH Delay
OUT
D
± TRI-STATE to LOW Delay
OUT
Serializer PLL Lock Time
Serializer Delay
TxOUT_E_O centered on (tBIT/)2
RL = 100Ω, VODSEL = L, CL = 10 pF to GND, (Figure 3)
RL = 100Ω, CL = 10 pF to GND, (Note 8), (Figure 5)
RL = 100Ω, CL = 10 pF to GND, (Note 5), (Figure 6)
RL = 100Ω
RL = 100Ω, PRE = OFF, RAOFF = L, TRFB = H,
(Figure 8)
RL = 100Ω, PRE = OFF, RAOFF = L, TRFB = L,
(Figure 8)
5 MHz–43 MHz,
RL = 100Ω, CL = 10 pF to GND, RANDOM pattern (Notes 9, 10, 13), (Figure 9)
245 550 ps
264 550 ps
4 ns
4 ns
10 15 ns
10 15 ns
75 150 ns
75 150 ns
10 ms
3.5T+2 3.5T+10 ns
3.5T+2 3.5T+10 ns
0.76 0.84 UI

Deserializer Switching Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Pin/Freq. Min Typ Max Units
t
RCP
t
RDC
t
CLH
t
CHL
t
CLH
t
CHL
t
ROS
t
ROH
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Receiver out Clock Period t
RCP
= t
TCP
,
PTOSEL = H
RCLK Duty Cycle PTOSEL = H,
SLEW = L
LVCMOS Low-to-High Transition Time
LVCMOS High-to-Low Transition Time
LVCMOS Low-to-High Transition Time
LVCMOS High-to-Low Transition Time
R
(0:7) Setup Data to
OUT
RCLK (Group 1)
R
(0:7) Hold Data to RCLK
OUT
CL = 4 pF (lumped load), SLEW = H (Note 8)
CL = 4 pF (lumped load), SLEW = L (Note 8)
PTOSEL = L, SLEW = H,
(Figure 16)
(Group 1)
RCLK
(Figure 15)
R
[0:23],
OUT
RCLK, LOCK
R
[0:23],
OUT
RCLK, LOCK
R
[0:7] (0.35)*
OUT
23.25 T 200 ns
45 50 55 %
1.5 2.5 ns
1.5 2.5 ns
2.0 3.5 ns
2.0 3.5 ns
t
RCP
(0.35)*
t
RCP
(0.5*t
(0.5*t
RCP
RCP
)–3 UI
)–3 UI
ns
ns
Symbol Parameter Conditions Pin/Freq. Min Typ Max Units
t
ROS
t
ROH
t
ROS
t
ROH
t
ROS
t
ROH
t
ROS
t
ROH
t
ROS
t
ROH
t
HZR
t
LZR
t
ZHR
t
ZLR
t
DD
t
DSR
RxIN_TOL-L Receiver INput TOLerance
RxIN_TOL-R Receiver INput TOLerance
R
(8:15) Setup Data to
OUT
RCLK (Group 2)
R
(8:15) Hold Data to
OUT
PTOSEL = L, SLEW = H,
(Figure 16)
RCLK (Group 2)
R
(16:23) Setup Data to
OUT
RCLK (Group 3)
R
(16:23) Setup Data to
OUT
RCLK (Group 3)
R
(0:7) Setup Data to
OUT
RCLK (Group 1)
R
(0:7) Hold Data to RCLK
OUT
PTOSEL = H, SLEW = H,
(Figure 15)
(Group 1)
R
(8:15) Setup Data to
OUT
RCLK (Group 2)
R
(8:15) Hold Data to
OUT
RCLK (Group 2)
R
(16:23) Setup Data to
OUT
RCLK (Group 3)
R
(16:23) Setup Data to
OUT
RCLK (Group 3)
HIGH to TRI-STATE Delay PTOSEL = H,
LOW to TRI-STATE Delay
(Figure 14)
TRI-STATE to HIGH Delay
TRI-STATE to LOW Delay
Deserializer Delay PTOSEL = H,
(Figure 12)
Deserializer PLL Lock Time
(Notes 6, 8) 5 MHz 128k*T ms
from Powerdown
(Notes 7, 8, 10),
Left
(Figure 17)
(Notes 7, 8, 10),
Right
(Figure 17)
R
[8:15],
OUT
LOCK
R
[16:23] (0.35)*
OUT
R
[0:7] (0.35)*
OUT
R
[8:15],
OUT
LOCK
R
[16:23] (0.35)*
OUT
R
[0:23],
OUT
RCLK, LOCK
(0.35)*
t
RCP
(0.35)*
t
RCP
t
RCP
(0.35)*
t
RCP
t
RCP
(0.35)*
t
RCP
(0.35)*
t
RCP
(0.35)*
t
RCP
t
RCP
(0.35)*
t
RCP
(0.5*t
(0.5*t
(0.5*t
(0.5*t
(0.5*t
(0.5*t
(0.5*t
(0.5*t
(0.5*t
(0.5*t
RCP
RCP
RCP
RCP
RCP
RCP
RCP
RCP
RCP
RCP
)–3 UI
)–3 UI
)–3 UI
)–3 UI
)–2 UI
)+2 UI
)−1 UI
)+1 UI
)+1 UI
)–1 UI
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3 10 ns
3 10 ns
3 10 ns
3 10 ns
RCLK
[5+(5/56)]T+3.7
[5+(5/56)]T+8ns
43 MHz 128k*T ms
5 MHz–43 MHz
5 MHz–43 MHz
0.25 UI
0.25 UI
DS90UR241/DS90UR124
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability
and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 3: Typical values represent most likely parametric norms at VDD = 3.3V, Ta = +25 degC, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed.
Note 4: Current into device pins is defined as positive. Current out of a device pin is defined as negative. Voltages are referenced to ground except VOD, ΔVOD, VTH and VTL which are differential voltages.
Note 5: When the Serializer output is tri-stated, the Deserializer will lose PLL lock. Resynchronization MUST occur before data transfer.
Note 6: t
Note 7: RxIN_TOL is a measure of how much phase noise (jitter) the Deserializer can tolerate in the incoming data stream before bit errors occur. It is a
measurement in reference with the ideal bit position, please see National’s AN-1217 for detail.
Note 8: Specification is guaranteed by characterization and is not tested in production.
Note 9: t
Note 10: UI – Unit Interval, equivalent to one ideal serialized data bit width. The UI scales with frequency.
Note 11: Figures 1, 2, 8, 12, 14 show a falling edge data strobe (TCLK IN/RCLK OUT).
Note 12: Figures 5, 15, 16 show a rising edge data strobe (TCLK IN/RCLK OUT).
Note 13: TxOUT_E_O is affected by pre-emphasis value.
is the time required by the Deserializer to obtain lock when exiting powerdown mode.
DSR
(@BER of 10e-9) specifies the allowable jitter on TCLK. t
JIT
not included in TxOUT_E_O parameter.
JIT
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AC Timing Diagrams and Test Circuits

FIGURE 1. Serializer Input Checkerboard Pattern

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20194503

FIGURE 2. Deserializer Output Checkerboard Pattern

FIGURE 3. Serializer LVDS Output Load and Transition Times

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FIGURE 5. Serializer Setup/Hold Times

DS90UR241/DS90UR124
20194507

FIGURE 6. Serializer TRI-STATE Test Circuit and Delay

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DS90UR241/DS90UR124
20194509

FIGURE 7. Serializer PLL Lock Time, and TPWDNB TRI-STATE Delays

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FIGURE 8. Serializer Delay

FIGURE 9. Transmitter Output Eye Opening (TxOUT_E_O)

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DS90UR241/DS90UR124
VOD = (D
OUT+
) – (D
OUT−
)
Differential output signal is shown as (D

FIGURE 11. Deserializer LVCMOS Output Load and Transition Times

OUT+
) – (D
), device in Data Transfer mode.
OUT−

FIGURE 10. Serializer VOD Diagram

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FIGURE 12. Deserializer Delay

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