The DS90C385 transmitter converts 28 bits of LVCMOS/
LVTTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link.
Every cycle of the transmit clock 28 bits of input data are
sampled and transmitted. At a transmit clock frequency of 85
MHz, 24 bits of RGB data and 3 bits of LCD timing and
control data (FPLINE, FPFRAME, DRDY) are transmitted at
a rate of 595 Mbps per LVDS data channel. Using a 85 MHz
clock, the data throughput is 297.5 Mbytes/sec. Also available is the DS90C365 that converts 21 bits of LVCMOS/
LVTTL data into three LVDS (Low Voltage Differential Signaling) data streams. Both transmitters can be programmed
for Rising edge strobe or Falling edge strobe through a
dedicated pin. A Rising edge or Falling edge strobe transmitter will interoperate with a Falling edge strobe Receiver
(DS90CF386/DS90CF366) without any translation logic.
The DS90C385 is also offered in a 64 ball, 0.8mm fine pitch
ball grid array (FBGA) package which provides a 44 %
reduction in PCB footprint compared to the TSSOP package.
This chipset is an ideal means to solve EMI and cable size
problems associated with wide, high-speed TTL interfaces.
Features
n 20 to 85 MHz shift clock support
n Best–in–Class Set & Hold Times on TxINPUTs
<
n Tx power consumption
Grayscale
n Tx Power-down mode
n Supports VGA, SVGA, XGA and Dual Pixel SXGA.
n Narrow bus reduces cable size and cost
n Up to 2.38 Gbps throughput
n Up to 297.5 Megabytes/sec bandwidth
n 345 mV (typ) swing LVDS devices for low EMI
n PLL requires no external components
n Compatible with TIA/EIA-644 LVDS standard
n Low profile 56-lead or 48-lead TSSOP package
n DS90C385 also available in a 64 ball, 0.8mm fine pitch
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CMOS/TTL Input Voltage−0.5V to (V
LVDS Driver Output Voltage−0.3V to (V
DS90C385/DS90C365
LVDS Output Short Circuit
DurationContinuous
Junction Temperature+150˚C
)−0.3V to +4V
CC
CC
CC
+ 0.3V)
+ 0.3V)
DS90C385SLC2.0 W
Package Derating:
DS90C385MTD12.5 mW/˚C above +25˚C
Package Derating:
DS90C365MTD16 mW/˚C above +25˚C
DS90C385SLC10.2 mW/˚C above +25˚C
ESD Rating
(HBM, 1.5kΩ, 100pF)
(EIAJ, 0Ω, 200 pF)
Latch Up Tolerance
@
25˚C
>
Storage Temperature−65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec)+260˚C
Solder reflow Temperature
(20 sec for FBGA)+220˚C
Maximum Package Power Dissipation Capacity
@
MTD56 (TSSOP) Package:
DS90C385MTD1.63 W
MTD48 (TSSOP) Package:
DS90C365MTD1.98 W
25˚C
Recommended Operating
Conditions
Min Nom Max Units
Supply Voltage (V
Operating Free Air
Temperature (T
Supply Noise Voltage (V
TxCLKIN frequency2085 MHz
)3.0 3.3 3.6V
CC
)−10 +25 +70 ˚C
A
)100 mV
CC
SLC64 (FBGA) Package:
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
SymbolParameterConditionsMinTypMaxUnits
LVCMOS/LVTTL DC SPECIFICATIONS
V
IH
V
IL
V
CL
I
IN
LVDS DC SPECIFICATIONS
V
OD
∆V
OD
V
OS
∆V
OS
I
OS
I
OZ
TRANSMITTER SUPPLY CURRENT
ICCTWTransmitter Supply Current
ICCTGTransmitter Supply Current
High Level Input Voltage2.0V
CC
Low Level Input VoltageGND0.8V
Input Clamp VoltageICL= −18 mA−0.79−1.5V
Input CurrentVIN= 0.4V, 2.5V or V
V
= GND−100µA
IN
CC
+1.8+10µA
Differential Output VoltageRL= 100Ω250345450mV
Change in VODbetween
35mV
complimentary output states
Offset Voltage (Note 4)1.1251.251.375V
Change in VOSbetween
35mV
complimentary output states
Output Short Circuit CurrentV
Output TRI-STATE®CurrentPower Down = 0V,
Worst Case
DS90C385
16 Grayscale
DS90C385
= 0V, RL= 100Ω−3.5−5mA
OUT
±
1
V
=0VorV
OUT
= 100Ω,
R
L
= 5 pF,
C
L
Worst Case Pattern
(Figures 1, 4 )
= 100Ω,
R
L
= 5 pF,
C
L
16 Grayscale Pattern
(Figures 2, 4 )
CC
f = 32.5 MHz3145mA
f = 40 MHz3250mA
f = 65 MHz3755mA
f = 85 MHz4260mA
f = 32.5 MHz2938mA
f = 40 MHz3040mA
f = 65 MHz3545mA
f = 85 MHz3950mA
±
10µA
>
>
±
300mA
7kV
500V
PP
V
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Electrical Characteristics (Continued)
Over recommended operating supply and temperature ranges unless otherwise specified.
SymbolParameterConditionsMinTypMaxUnits
TRANSMITTER SUPPLY CURRENT
ICCTWTransmitter Supply Current
Worst Case
DS90C365
ICCTGTransmitter Supply Current
16 Grayscale
DS90C365
ICCTZTransmitter Supply Current
Power Down
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2: Typical values are given for V
Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. Voltages are referenced to ground unless otherwise
specified (except V
Note 4: V
OS
and ∆VOD).
OD
previously referred as VCM.
= 3.3V and TA= +25C.
CC
= 100Ω,
R
L
= 5 pF,
C
L
Worst Case Pattern
(Figures 1, 4 )
= 100Ω,
R
L
= 5 pF,
C
L
16 Grayscale Pattern
(Figures 3, 4 )
f = 32.5 MHz2842mA
f = 40 MHz2947mA
f = 65 MHz3452mA
f = 85 MHz3957mA
f = 32.5 MHz2635mA
f = 40 MHz2737mA
f = 65 MHz3242mA
f = 85 MHz3647mA
Power Down = Low
Driver Outputs in TRI-STATE under
Power Down Mode
1055µA
DS90C385/DS90C365
Recommended Transmitter Input Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
SymbolParameterMinTypMax Units
TCITTxCLK IN Transition Time (Figure 6)1.06.0ns
TCIPTxCLK IN Period (Figure 7)11.76T50ns
TCIHTxCLK IN High Time (Figure 7)0.35T0.5T0.65Tns
TCILTxCLK IN Low Time (Figure 7)0.35T0.5T0.65Tns
TXITTxIN Transition Time1.56.0ns
Transmitter Switching Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified
SymbolParameterMinTypMax Units
LLHTLVDS Low-to-High Transition Time (Figure 5)0.751.5ns
LHLTLVDS High-to-Low Transition Time (Figure 5)0.751.5ns
TPPos0Transmitter Output Pulse Position for Bit 0 (Figures 13, 14)
(Note 5)
TPPos1Transmitter Output Pulse Position for Bit 13.323.573.82ns
TPPos2Transmitter Output Pulse Position for Bit 26.897.147.39ns
TPPos3Transmitter Output Pulse Position for Bit 310.4610.7110.96ns
TPPos4Transmitter Output Pulse Position for Bit 414.0414.2914.54ns
TPPos5Transmitter Output Pulse Position for Bit 517.6117.8618.11ns
TPPos6Transmitter Output Pulse Position for Bit 621.1821.4321.68ns
TPPos0Transmitter Output Pulse Position for Bit 0 (Figures 13, 14)
(Note 5)
TPPos1Transmitter Output Pulse Position for Bit 12.002.202.40ns
TPPos2Transmitter Output Pulse Position for Bit 24.204.404.60ns
TPPos3Transmitter Output Pulse Position for Bit 36.396.596.79ns
TPPos4Transmitter Output Pulse Position for Bit 48.598.798.99ns
TPPos5Transmitter Output Pulse Position for Bit 510.7910.9911.19ns
TPPos6Transmitter Output Pulse Position for Bit 612.9913.1913.39ns
f = 40 MHz−0.2500.25ns
f = 65 MHz−0.2000.20ns
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Transmitter Switching Characteristics (Continued)
Over recommended operating supply and temperature ranges unless otherwise specified
SymbolParameterMinTypMax Units
TPPos0Transmitter Output Pulse Position for Bit 0 (Figures 13, 14)
(Note 5)
TPPos1Transmitter Output Pulse Position for Bit 11.481.681.88ns
TPPos2Transmitter Output Pulse Position for Bit 23.163.363.56ns
DS90C385/DS90C365
TPPos3Transmitter Output Pulse Position for Bit 34.845.045.24ns
TPPos4Transmitter Output Pulse Position for Bit 46.526.726.92ns
TPPos5Transmitter Output Pulse Position for Bit 58.208.408.60ns
TPPos6Transmitter Output Pulse Position for Bit 69.8810.0810.28ns
TPLLSTransmitter Phase Lock Loop Set (Figure 9)10ms
TPDDTransmitter Power Down Delay (Figure 12)100ns
Note 5: The Minimum and Maximum Limits are based on statistical analysis of the device performance over process, voltage, and temperature ranges. This
parameter is functionality tested only on Automatic Test Equipment (ATE).
Note 6: The limits are based on bench characterization of the device’s jitter response over the power supply voltage range. Output clock jitter is measured with a
cycle-to-cycle jitter of +/−3ns applied to the input clock signal while data inputs are switching (See Figures 15 and 16). A jitter event of 3ns, represents worse case
jump in the clock edge from most graphics controller VGA chips currently available. This parameter is used when calculating system margin as described in AN-1059.
Note 7: The worst case test pattern produces a maximum toggling of digital circuits, LVDS I/O and CMOS/TTL I/O.
Note 8: The 16 grayscale test pattern tests device power consumption for a “typical” LCD display pattern. The test pattern approximates signal switching needed
to produce groups of 16 vertical stripes across the display.
Note 9: Figures 1, 2 show a falling edge data strobe (TxCLK IN/RxCLK OUT).
Note 10: Recommended pin to signal mapping. Customer may choose to define differently.