National Semiconductor DS25CP102 Technical data

January 17, 2008
DS25CP102
3.125 Gbps 2X2 LVDS Crosspoint Switch with Transmit Pre-Emphasis and Receive Equalization
DS25CP102 3.125 Gbps 2X2 LVDS Crosspoint Switch with Pre-Emphasis and Equalization

General Description

The DS25CP102 is a 3.125 Gbps 2x2 LVDS crosspoint switch optimized for high-speed signal routing and switching over lossy FR-4 printed circuit board backplanes and balanced ca­bles. Fully differential signal paths ensure exceptional signal integrity and noise immunity. The non-blocking architecture allows connections of any input to any output or outputs.
The DS25CP102 features two levels (Off and On) of transmit pre-emphasis (PE) and two levels (Off and On) of receive equalization (EQ).
Wide input common mode range allows the switch to accept signals with LVDS, CML and LVPECL levels; the output levels are LVDS. A very small package footprint requires a minimal space on the board while the flow-through pinout allows easy board layout. Each differential input and output is internally terminated with a 100 resistor to lower device insertion and return losses, reduce component count and further minimize board space.

Typical Application

Features

DC - 3.125 Gbps low jitter, low skew, low power operation
Pin configurable, fully differential, non-blocking
architecture Pin selectable transmit pre-emphasis and receive
equalization eliminate data dependant jitter Wide Input Common Mode Voltage Range allows DC-
coupled interface to CML and LVPECL drivers On-chip 100 input and output termination minimizes
insertion and return losses, reduces component count and minimizes board space
8 kV ESD on LVDS I/O pins protects adjoining
components Small 4 mm x 4 mm LLP-16 space saving package

Applications

High-speed channel select applications
Clock and data buffering and muxing
OC-48 / STM-16
SD/HD/3GHD SDI Routers
30008003
© 2008 National Semiconductor Corporation 300080 www.national.com

Ordering Code

NSID Function Available Equalization
DS25CP102
DS25CP102TSQ Crosspoint Switch Off / On Off / On

Block Diagram

30008001

Connection Diagram

Levels
Available Pre-Emphasis
Levels
30008002

Pin Descriptions

Pin Name Pin Number I/O, Type Pin Description
IN0+, IN0- , IN1+, IN1-
OUT0+, OUT0-, OUT1+, OUT1-
SEL0, SEL1 7, 8 I, LVCMOS Switch configuration pins. There is a 20k pulldown resistor on this pin.
EN0, EN1 14, 13 I, LVCMOS Output enable pins. There is a 20k pulldown resistor on this pin.
PE 15 I, LVCMOS Transmit Pre-Emphasis select pin. There is a 20k pulldown resistor on this pin.
EQ 6 I, LVCMOS Receive Equalizaton select pin. There is a 20k pulldown resistor on this pin.
VDD 16 Power Power supply pin.
GND 5, DAP Power Ground pin and Device Attach Pad (DAP) ground.
1, 2, 3, 4
12, 11, 10, 9
I, LVDS Inverting and non-inverting high speed LVDS input pins.
O, LVDS Inverting and non-inverting high speed LVDS output pins.
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Absolute Maximum Ratings (Note 4)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage −0.3V to +4V LVCMOS Input Voltage −0.3V to (VCC + 0.3V)
LVDS Input Voltage −0.3V to +4V LVDS Differential Input Voltage 0V to 1.0V LVDS Output Voltage −0.3V to (VCC + 0.3V)
LVDS Differential Output Voltage 0V to 1.0V LVDS Output Short Circuit Current
Duration Junction Temperature +150°C Storage Temperature Range −65°C to +150°C Lead Temperature Range Soldering (4 sec.) +260°C Maximum Package Power Dissipation at 25°C SQA Package 2.99W Derate SQA Package 23.9 mW/°C above +25°C
5 ms
Package Thermal Resistance
 θ
 θ
JA
JC
+41.8°C/W
+6.9°C/W
ESD Susceptibility HBM (Note 1)
MM (Note 2)
CDM (Note 3)
Note 1: Human Body Model, applicable std. JESD22-A114C
Note 2: Machine Model, applicable std. JESD22-A115-A
Note 3: Field Induced Charge Device Model, applicable std.
JESD22-C101-C
8 kV
250V
1250V

Recommended Operating Conditions

Min Typ Max Units
Supply Voltage (VCC) 3.0 3.3 3.6 V
Receiver Differential Input Voltage (VID)
Operating Free Air Temperature (TA)
0 1 V
−40 +25 +85 °C

DC Electrical Characteristics (Notes 5, 6, 7)

Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
LVCMOS DC SPECIFICATIONS
V
IH
V
IL
I
IH
I
IL
V
CL
LVDS INPUT DC SPECIFICATIONS
V
ID
V
TH
V
TL
V
CMR
High Level Input Voltage 2.0 V
CC
Low Level Input Voltage GND 0.8 V
High Level Input Current VIN = 3.6V
40 175 250
VCC = 3.6V
Low Level Input Current VIN = GND
0 ±10
VCC = 3.6V
Input Clamp Voltage ICL = −18 mA, VCC = 0V −0.9 −1.5 V
Input Differential Voltage 0 1 V
Differential Input High Threshold
Differential Input Low Threshold
VCM = +0.05V or VCC-0.05V
0 +100 mV
−100 0 mV
Common Mode Voltage Range VID = 100 mV 0.05 VCC -
0.05
V
μA
μA
V
Symbol Parameter Conditions Min Typ Max Units
LVDS OUTPUT DC SPECIFICATIONS
V
OD
DS25CP102
ΔV
V
OS
ΔV
I
OS
C
OUT
R
OUT
Differential Output Voltage
Change in Magnitude of VOD for Complimentary
OD
Output States
Offset Voltage
Change in Magnitude of VOS for Complimentary
OS
Output States
RL = 100Ω
RL = 100Ω
250 350 450 mV
-35 35 mV
1.05 1.2 1.375 V
-35 35 mV
Output Short Circuit Current (Note 8) OUT to GND -35 -55 mA
OUT to V
CC
Output Capacitance Any LVDS Output Pin to GND
Output Termination Resistor Between OUT+ and OUT-
7 55 mA
1.2 pF
100
SUPPLY CURRENT
I
I
CC
CCZ
Supply Current PE = OFF, EQ = OFF 77 90 mA
Supply Current with Outputs Disabled EN0 = EN1 = 0 23 29 mA
Note 4: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
Note 5: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.
Note 6: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and ΔVOD.
Note 7: Typical values represent most likely parametric norms for VCC = +3.3V and TA = +25°C, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed.
Note 8: Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only.
Ω
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AC Electrical Characteristics (Note 11)

Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 9, 10)
Symbol Parameter Conditions Min Typ Max Units
LVDS OUTPUT AC SPECIFICATIONS
t
PLHD
t
PHLD
t
SKD1
t
SKD2
t
SKD3
t
LHT
t
HLT
t
ON
t
OFF
t
SEL
JITTER PERFORMANCE WITH EQ = Off, PE = Off (Figure 5)
t
RJ1
t
RJ2
t
DJ1
t
DJ2
t
TJ1
t
TJ2
JITTER PERFORMANCE WITH EQ = Off, PE = On (Figures 6, 9)
t
RJ1B
t
RJ2B
t
DJ1B
t
DJ2B
t
TJ1B
t
TJ2B
JITTER PERFORMANCE WITH EQ = On, PE = Off (Figures 7, 9)
t
RJ1D
t
RJ2D
t
DJ1D
t
DJ2D
t
TJ1D
t
TJ2D
Differential Propagation Delay Low to High
Differential Propagation Delay High to
RL = 100Ω
365 500 ps
345 500 ps
Low
Pulse Skew |t
PLHD
− t
| (Note 12) 20 55 ps
PHLD
Channel to Channel Skew (Note 13) 12 25 ps
Part to Part Skew , (Note 14) 50 150 ps
Rise Time
Fall Time 65 120 ps
Output Enable Time
Output Disable Time
Select Time
Random Jitter (RMS Value) No Test Channels (Note 15)
Deterministic Jitter (Peak to Peak) No Test Channels (Note 16)
Total Jitter (Peak to Peak) No Test Channels (Note 17)
Random Jitter (RMS Value) Test Channel B (Note 15)
Deterministic Jitter (Peak to Peak) Test Channel B (Note 16)
Total Jitter (Peak to Peak) Test Channel B (Note 17)
Random Jitter (RMS Value) Test Channel D (Note 15)
Deterministic Jitter (Peak to Peak) Test Channel D (Note 16)
Total Jitter (Peak to Peak) Test Channel D (Note 17)
RL = 100Ω
ENn = LH to output active
ENn = HL to output inactive
SELn LH or HL to output
VID = 350 mV VCM = 1.2V Clock (RZ)
VID = 350 mV VCM = 1.2V K28.5 (NRZ)
VID = 350 mV VCM = 1.2V PRBS-23 (NRZ)
VID = 350 mV VCM = 1.2V Clock (RZ)
VID = 350 mV VCM = 1.2V K28.5 (NRZ)
VID = 350 mV VCM = 1.2V PRBS-23 (NRZ)
VID = 350 mV VCM = 1.2V Clock (RZ)
VID = 350 mV VCM = 1.2V K28.5 (NRZ)
VID = 350 mV VCM = 1.2V PRBS-23 (NRZ)
2.5 Gbps 0.5 1 ps
3.125 Gbps 0.5 1 ps
2.5 Gbps 6 22 ps
3.125 Gbps 6 22 ps
2.5 Gbps 0.03 0.08
3.125 Gbps 0.05 0.11
2.5 Gbps 0.5 1 ps
3.125 Gbps 0.5 1 ps
2.5 Gbps 3 12 ps
3.125 Gbps 3 12 ps
2.5 Gbps 0.03 0.06
3.125 Gbps 0.04 0.09
2.5 Gbps 0.5 1 ps
3.125 Gbps 0.5 1 ps
2.5 Gbps 16 24 ps
3.125 Gbps 12 24 ps
2.5 Gbps 0.07 0.11
3.125 Gbps 0.07 0.11
65 120 ps
7 20
5 12 ns
3.5 12 ns
UI
UI
UI
UI
UI
UI
DS25CP102
μs
P-P
P-P
P-P
P-P
P-P
P-P
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