National Semiconductor 54FCT541 Technical data
54FCT541
Octal Buffer/Line Driver with TRI-STATE
®
Outputs
54FCT541 Octal Buffer/Line Driver with TRI-STATE Outputs
October 1999
General Description
The ’FCT541 is an octal buffer and line driver with
TRI-STATE outputs designed to be employed as a memory
and address driver, clock driver, or bus-oriented transmitter/
receiver. The ’FCT541 is similar to the ’FCT244 with broadside pinout.
Features
n Non-inverting buffers
n TTL input and output level compatible
n CMOS power consumption
n Output sink capability of 48 mA, source capability of
12 mA
n Flow-through pinout for ease of PC board layout
n Standard Microcircuit Drawing (SMD) 5962-8976601
Ordering Code
Military Package Package Description
Number
54FCT541DMQB J20A 20-Lead Ceramic Dual-In-Line
54FCT541FMQB W20A 20-Lead Cerpack
54FCT541LMQB E20A 20-Lead Ceramic Leadless Chip Carrier, Type C
Connection Diagram
Pin Assignment
DIP and Cerpack
DS100953-1
Pin Assignment
LCC
Pin Names Description
OE
,OE
1
I
0–I7
O
0–O7
OE
1
LLH H
HXX Z
XHX Z
LLL L
=
H
HIGH Voltage Level
L=LOW Voltage Level
X=Immaterial
Z=High Impedance
Output Enable Input (Active Low)
2
Inputs
Outputs
Inputs Outputs
OE
2
I FCT541
DS100953-30
TRI-STATE®is a registered trademarkof FAirchild Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS100953 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
54FCT541
Distributors for availability and specifications.
Storage Temperature −65˚C to +150˚C
Ambient Temperature under Bias −55˚C to +125˚C
Junction Temperature under Bias
Ceramic −55˚C to +175˚C
Pin Potential to
V
CC
Ground Pin −0.5V to +7.0V
Input Voltage (Note 2) −0.5V to +7.0V
Input Current (Note 2) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-Off State −0.5V to 5.5V
in the HIGH State −0.5V to V
Current Applied to Output
in LOW State (Max) twice the rated I
DC Latchup Source Current −500 mA
Recommended Operating
Conditions
Free Air Ambient Temperature
Military −55˚C to +125˚C
Supply Voltage
Military +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
DC Electrical Characteristics
Symbol Parameter FCT541 Units V
CC
Min Typ Max
V
V
V
V
Input HIGH Voltage 2.0 V Recognized HIGH Signal
IH
Input LOW Voltage 0.8 V Recognized LOW Signal
IL
Input Clamp Diode Voltage −1.2 V Min I
CD
Output HIGH Voltage 54FCT 4.3 V Min I
OH
54FCT 2.4 V Min I
V
Output LOW Voltage 54FCT 0.2 V Min I
OL
54FCT 0.55 V Min I
I
I
I
I
I
I
∆I
I
I
Input HIGH Current 5 µA Max V
IH
Input LOW Current −5 µA Max V
IL
Output Leakage Current 10 µA Max V
OZH
Output Leakage Current −10 µA Max V
OZL
Output Short-Circuit Current -60 mA Max V
OS
Quiescent Power
CCQ
Supply Current
Quiescent Power
CC
Supply Current
Dynamic I
CCD
Total Power Supply
CC
Current
Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions
is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
CC
1.5 mA Max V
2.0 mA Max V
0.4 mA/
Max VCC= 5.5V, Outputs Open,
MHz
6.0 mA Max VCC= 5.5V, Outputs Open, fI
Conditions
=
−18 mA
IN
=
−300 µA
OH
=
−12 mA
OH
=
300 µA
OL
=
48 mA
OL
=
V
IN
CC
=
0.0V
IN
=
5.5V; OE
OUT
=
0.0V; OE
OUT
=
0.0V
OUT
<
0.2V or VIN5.3V, VCC=
IN
5.5V
=
− 2.1V
V
I
CC
One Bit Toggling, 50%Duty
=
=
GND
GND
n
n
Cycle, OE
= 10MHz, OE
Bit Toggling, 50%Duty Cycle,
OE
n
=
n
=
n
=
GND, One
OL
2.0V
2.0V
CC
(mA)
www.national.com 2
Loading...