LMP2021/LMP2022
Zero Drift, Low Noise, EMI Hardened Amplifiers
LMP2021/LMP2022 Zero Drift, Low Noise, EMI Hardened Amplifiers
November 6, 2008
General Description
The LMP2021/LMP2022 are single and dual precision operational amplifiers offering ultra low input offset voltage, near
zero input offset voltage drift, very low input voltage noise and
very high open loop gain. They are part of the LMP® precision
family and are ideal for instrumentation and sensor interfaces.
The LMP2021/LMP2022 have only 0.004 µV/°C of input offset
voltage drift, and 0.4 µV of input offset voltage. These attributes provide great precision in high accuracy applications.
The proprietary continuous correction circuitry guarantees
impressive CMRR and PSRR, removes the 1/f noise component, and eliminates the need for calibration in many circuits.
With only 260 nVPP (0.1 Hz to 10 Hz) of input voltage noise
and no 1/f noise component, the LMP2021/LMP2022 are suitable for low frequency applications such as industrial precision weigh scales. The low input bias current of 23 pA makes
these excellent choices for high source impedance circuits
such as non-invasive medical instrumentation as well as test
and measurement equipment. The extremely high open loop
gain of 160 dB drastically reduces gain error in high gain applications. With ultra precision DC specifications and very low
noise, the LMP2021/LMP2022 are ideal for position sensors,
bridge sensors, pressure sensors, medical equipment and
other high accuracy applications with very low error budgets.
The LMP2021 is offered in 5-Pin SOT-23 and 8-Pin SOIC
packages. The LMP2022 is offered in 8-Pin MSOP and 8-Pin
SOIC packages.
Features
(Typical Values, TA = 25°C, VS = 5V)
Input offset voltage (typical)−0.4 µV
■
Input offset voltage (max)±5 µV
■
Input offset voltage drift (typical)-0.004 µV/°C
■
Input offset voltage drift (max)±0.02 µV/°C
■
Input voltage noise, AV = 100011 nV/√Hz
■
Open loop gain160 dB
■
CMRR139 dB
■
PSRR130 dB
■
Supply voltage range2.2V to 5.5V
■
Supply current (per amplifier)1.1 mA
■
Input bias current±25 pA
■
GBW5 MHz
■
Slew rate2.6 V/µs
■
Operating temperature range−40°C to 125°C
■
5-Pin SOT-23, 8-Pin MSOP and 8-Pin SOIC Packages
■
Applications
Precision instrumentation amplifiers
■
Battery powered instrumentation
■
Thermocouple amplifiers
■
Bridge amplifiers
■
Typical Application
Bridge Amplifier
The LMP2021/LMP2022 support systems with up to 24 bits of accuracy.
LMP® is a registered trademark of National Semiconductor Corporation.
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Human Body Model2000V
Machine Model200V
LMP2021/LMP2022
Charge Device Model1000V
VIN Differential±V
Supply Voltage (VS = V+ – V−)
Output Short-Circuit Duration to V+ or V
(Note 3)
Storage Temperature Range−65°C to 150°C
−
6.0V
5s
Soldering Information
Infrared or Convection (20 sec)235°C
Wave Soldering Lead Temperature
(10 sec)260°C
Operating Ratings (Note 1)
Temperature Range−40°C to 125°C
Supply Voltage (VS = V+ – V–)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 2.5V, V− = 0V, VCM = V+/2, RL >10 kΩ to V+/2. Boldface limits apply at the temperature extremes.
SymbolParameterConditionsMin
(Note 7)
V
OS
TCV
I
B
I
OS
CMRRCommon Mode Rejection Ratio
CMVRInput Common-Mode Voltage Range
Input Offset Voltage–0.9±5
Input Offset Voltage Drift (Note 8)0.001±0.02
OS
Input Bias Current±23±100
Input Offset Current±57±200
−0.2V ≤ VCM ≤ 1.7V
0V ≤ VCM ≤ 1.5V
Large Signal CMRR ≥ 105 dB
105
102
−0.2
Large Signal CMRR ≥ 102 dB
EMIRRElectro-Magnetic Interference
Rejection Ratio
(Note 9)
IN+
and
IN−
V
= 100 mVP (−20 dBVP)
RF-PEAK
f = 400 MHz
V
= 100 mVP (−20 dBVP)
RF-PEAK
f = 900 MHz
V
= 100 mVP (−20 dBVP)
RF-PEAK
f = 1800 MHz
V
= 100 mVP (−20 dBVP)
RF-PEAK
f = 2400 MHz
PSRRPower Supply Rejection Ratio
2.5V ≤ V+ ≤ 5.5V, VCM = 0
115
112
2.2V ≤ V+ ≤ 5.5V, VCM = 0
A
VOL
Large Signal Voltage Gain
RL = 10 kΩ to V+/2
V
= 0.5V to 2V
OUT
RL = 2 kΩ to V+/2
V
= 0.5V to 2V
OUT
110130
124
119
120
115
0
40
48
67
79
Typ
(Note 6)
141
130
150
150
(Note 7)
2.2V to 5.5V
Max
±10
±300
±250
1.7
1.5
Units
μV
μV/°C
pA
pA
dB
V
dB
dB
dB
www.national.com2
LMP2021/LMP2022
SymbolParameterConditionsMin
(Note 7)
V
OUT
Output Swing High
RL = 10 kΩ to V+/2
3850
Typ
(Note 6)
Max
(Note 7)
Units
70
6285
115
3045
55
5875
mV
from either
rail
Output Swing Low
RL = 2 kΩ to V+/2
RL = 10 kΩ to V+/2
RL = 2 kΩ to V+/2
95
I
OUT
I
S
SRSlew Rate (Note 10)
GBWGain Bandwidth Product
G
M
Φ
M
C
IN
e
n
i
n
t
r
Linear Output CurrentSourcing, V
Sinking, V
= 2V3050
OUT
= 0.5V3050
OUT
Supply CurrentPer Amplifier0.951.10
1.37
2.5
5MHz
10dB
60deg
Gain Margin
Phase Margin
AV = +1, CL = 20 pF, RL = 10 kΩ
VO = 2 V
PP
CL = 20 pF, RL = 10 kΩ
CL = 20 pF, RL = 10 kΩ
CL = 20 pF, RL = 10 kΩ
Input CapacitanceCommon Mode12
Differential Mode12
Input-Referred Voltage Noise
Density
f = 0.1 kHz or 10 kHz, AV = 100011
f = 0.1 kHz or 10 kHz, AV = 10015
Input-Referred Voltage Noise0.1 Hz to 10 Hz260
0.01 Hz to 10 Hz330
Input-Referred Current Noisef = 1 kHz350
Recovery time
to 0.1%, RL = 10 kΩ, AV = −50,
V
= 1.25 VPP Step, Duration = 50 μs
OUT
50µs
mA
mA
V/μs
pF
nV/
nV
fA/
CTCross TalkLMP2022, f = 1 kHz150dB
PP
5V Electrical Characteristics (Note 5)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, RL > 10 kΩ to V+/2. Boldface
limits apply at the temperature extremes.
SymbolParameterConditionsMin
(Note 7)
V
OS
TCV
I
B
I
OS
CMRRCommon Mode Rejection Ratio
CMVRInput Common-Mode Voltage Range
Input Offset Voltage−0.4±5
Input Offset Voltage Drift (Note 8)−0.004±0.02
OS
Input Bias Current±25±100
Input Offset Current±48±200
−0.2V ≤ VCM ≤ 4.2V
0V ≤ VCM ≤ 4.0V
Large Signal CMRR ≥ 120 dB
120
115
–0.2
Large Signal CMRR ≥ 115 dB
0
Typ
(Note 6)
139
4.2
Max
(Note 7)
±10
±300
±250
4.0
Units
μV
μV/°C
pA
pA
dB
V
3www.national.com
SymbolParameterConditionsMin
EMIRRElectro-Magnetic Interference
Rejection Ratio
(Note 9)
LMP2021/LMP2022
IN+
and
IN−
V
= 100 mVP (−20 dBVP)
RF-PEAK
f = 400 MHz
V
= 100 mVP (−20 dBVP)
RF-PEAK
f = 900 MHz
V
= 100 mVP (−20 dBVP)
RF-PEAK
f = 1800 MHz
V
= 100 mVP (−20 dBVP)
RF-PEAK
(Note 7)
58
64
72
82
Typ
(Note 6)
Max
(Note 7)
f = 2400 MHz
PSRRPower Supply Rejection Ratio
2.5V ≤ V+ ≤ 5.5V, VCM = 0
115
130
112
2.2V ≤ V+ ≤ 5.5V, VCM = 0
A
VOL
Large Signal Voltage Gain
RL = 10 kΩ to V+/2
V
= 0.5V to 4.5V
OUT
RL = 2 kΩ to V+/2
V
= 0.5V to 4.5V
OUT
V
OUT
Output Swing High
RL = 10 kΩ to V+/2
110130
125
160
120
123
160
118
83135
170
RL = 2 kΩ to V+/2
120160
204
Output Swing Low
RL = 10 kΩ to V+/2
6580
105
RL = 2 kΩ to V+/2
103125
158
I
OUT
I
S
Linear Output CurrentSourcing, V
Sinking, V
= 4.5V3050
OUT
= 0.5V3050
OUT
Supply CurrentPer Amplifier1.11.25
1.57
SRSlew Rate (Note 10)
GBWGain Bandwidth Product
G
M
Φ
M
C
IN
Gain Margin
Phase Margin
Input CapacitanceCommon Mode12
AV = +1, CL = 20 pF, RL = 10 kΩ
VO = 2 V
PP
CL = 20 pF, RL = 10 kΩ
CL = 20 pF, RL = 10 kΩ
CL = 20 pF, RL = 10 kΩ
2.6
5MHz
10dB
60deg
Differential Mode12
e
n
Input-Referred Voltage Noise Density f = 0.1 kHz or 10 kHz, AV= 100011
f = 0.1 kHz or 10 kHz, AV= 10015
Input-Referred Voltage Noise0.1 Hz to 10 Hz Noise260
0.01 Hz to 10 Hz Noise330
i
n
t
r
Input-Referred Current Noisef = 1 kHz350
Input Overload Recovery time
to 0.1%, RL = 10 kΩ, AV = −50,
V
= 2.5 VPP Step, Duration = 50 μs
OUT
50
CTCross TalkLMP2022, f = 1 kHz150dB
Units
dB
dB
dB
mV
from
either rail
mA
mA
V/μs
pF
nV/
nV
PP
fA/
μs
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Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2: Human Body Model per MIL-STD-883, Method 3015.7. Machine Model, per JESD22-A115-A. Field-Induced Charge-Device Model, per JESD22-C101C.
Note 3: Package power dissipation should be observed.
Note 4: The maximum power dissipation is a function of T
PD = (T
Note 5: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where
TJ > TA.
Note 6: Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend
on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 7: All limits are guaranteed by testing, statistical analysis or design.
Note 8: Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.
Note 9: The EMI Rejection Ratio is defined as EMIRR = 20Log ( V
Note 10: The number specified is the average of rising and falling slew rates and is measured at 90% to 10%.
- TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.
J(MAX)
, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is