National BAV99 Schematic [ru]
BAV99
N
BAV99
3
3
A7
2
SOT-23
1
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
12
Discrete POWER & Signal
Technologies
CONNECTION DIAGRAM
3
21
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage 70 V
Average Rectified Current 200 mA
DC For ward Cur re nt 600 mA
Recurrent Peak Forward Current 700 mA
Peak Forward Surge Current
Storage Temperature Range -55 to +150
Operating Junction Temperature 150 °C
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
A
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
BAV99
P
D
R
θ
JA
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
50 0 05
1N4150
MMBD1201 1205
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
V
FM
Br eakdo wn V oltage IR = 100 µA70V
Reverse Current VR = 70 V
= 25 V, TA = 150°C
V
R
VR = 70 V, TA = 150°C
Forward Voltage IF = 1.0 mA
= 10 mA
I
F
IF = 50 mA
= 150 mA
I
F
2.5
30
50
715
855
1.0
1.25
µ
µ
µ
mV
mV
V
V
A
A
A
Diode Capacitance VR = 0, f = 1.0 M Hz 1.5 pF
Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
Ω
= 100
R
Peak Forward Voltage
L
= 10 mA, tr = 20 nS
I
F
6.0 nS
1.75 V
Typical Characteristics
BAV99
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
150
Ta= 25°C
140
130
120
R
R
V
V - REV ER SE VO LTAG E (V )
110
1 2 3 5 10 20 30 50 100
I - REVERSE CUR RENT (uA)
R
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
485
Ta= 25°C
450
400
350
300
250
F
F
V
V - FORWA R D VOLTAGE (m V)
225
1 2 3 5 10 20 30 50 100
I - FORWARD CURRENT (uA)
F
I
F
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
Ta= 25°C
300
250
200
150
100
50
R
0
I - REVERSE CURRENT (nA)
10 20 30 50 70 100
GENER AL RULE : The Reverse Cu rrent of a diode will appr oximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURREN T
VF - 0.1 to 10 mA
725
Ta= 25°C
700
650
600
550
500
F
F
V
V - FORWARD VOLTAGE (mV)
450
0.1 0.2 0.3 0.5 1 2 3 5 10
I - FORWARD CURRENT (mA)
F
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