NanoAmp Solutions N04Q16yyC2B Advance Information
查询N04Q1612C2BB-15C供应商
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04Q16yyC2B
Advance Information
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1
CE2) controls and output enable (OE
easy memory expansion. Byte controls (UB
LB
) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-lowpower is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0
o
to +70
in the industrial range of -40
C for the lowest power and is also available
o
C to +85oC. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
and
) to allow for
and
o
C
Features
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
2.3V - 2.7V
2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
2.5V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1
Byte control for independent byte operation
Output Enable (OE
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
and CE2)
) for memory expansion
Product Options
Typical
Part Number I/O
N04Q1612C2Bx-15C x16 50nA 1.2 1.2, 1.8, 3 150ns 0.4 mA @ 1MHz
N04Q1618C2Bx-15C x16 50nA
N04Q1618C2Bx-70C x16 200nA 70ns 0.6 mA @ 1MHz
N04Q1625C2Bx-15C x16 800nA 2.5 2.5, 3 150ns 0.6 mA @ 1MHz
N04Q1630C2Bx-70C x16 800nA 3.0 3.0 70ns 2.2mA @ 1MHz
Stock No. 23451-B 2/06 1
The specification is ADVANCE INFORMATION and subject to change without notice.
Standby
Current
Vcc
(V)
1.8 1.8, 2.5, 3
VccQ
(V)
Speed
(nS)
150ns 0.4 mA @ 1MHz
Typ ical
Operating Current
Operating
Temperat ure
o
C to +70oC
0
N04Q16yyC2B
NanoAmp Solutions, Inc.
Pin Configurations (4Mb)
A
4
1
A3
2
A2
3
A1
4
A0
5
CE1
6
I/O0
7
I/O1
8
I/O2
9
I/O3
10
VCCQ
11
VSSQ
12
I/O
4
13
I/O5
14
I/O6
15
I/O7
16
WE
17
A16
18
A15
19
A14
20
A13
21
A12
22
TSOP II
PIN
ONE
Advance Information
A
5
44
A6
43
A7
42
OE
41
UB
40
LB
39
I/O15
38
I/O14
37
I/O13
36
I/O12
35
VSS
34
VCC
33
I/O
11
32
I/O10
31
I/O9
30
I/O8
29
CE2
28
A
8
27
A9
26
A10
25
A11
24
A
23
17
123456
LB OE
A
I/O8
B
I/O9 I/O10 A5 A6 I/O1 I/O
C
V
D
SSQ
V
E
CCQ
I/O14I/O13A14A15I/O5I/O
F
I/O
G
NC
H
A0 A1 A2
A3 A
UB
I/O11 A17A7I/O3V
I/O
12
NC
15
A
8A9A10A11
NC
A
12A13
4
A
16
48 Pin BGA (top)
CE1
I/O4V
WE
CE2
I/O0
I/O
NC
2
CC
SS
6
7
Pin Descriptions
Pin Name Pin Function
A
0-A17
WE
CE1
CE2 Chip Enable 2 Input
OE
LB
UB
-I/O
I/O
0
7
I/O
-I/O
8
15
V
CC
V
CCQ
V
SS
V
SSQ
NC Not Connected
Address Inputs
Write Enable Input
Chip Enable 1 Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Lower Byte Data Input/Output
Upper Byte Data Input/Output
Core Power
Power for I/O
Core Ground
Ground for I/O
Stock No. 23451-B 2/06 2
The specification is ADVANCE INFORMATION and subject to change without notice.
N04Q16yyC2B
NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
Word
Address
Decode
(A1 - A4)
Address
Inputs
(A0, A5 - A17)
Logic
Page
Address
Decode
Logic
CE1
CE2
WE
OE
Control
Logic
UB
LB
4Mb
RAM Array
Advance Information
Word Mux
Input/
Output
Mux
I/O0 - I/O7
and
Buffers
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE
HXXXXX High Z
XL XXXX High Z
L H X X H H High Z Standby Standby
LHL
LHHL
LHHH
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance
Input Capacitance
I/O Capacitance
1. These parameters are verified in device characterization and are not 100% tested
1
Item Symbol Test Condition Min Max Unit
3
X
is in the select mode only I/O8 - I/O15 are affected as shown.
UB
L
L
L
C
C
1
1
1
1
IN
I/O
LB
L
L
L
1
1
1
1
I/O0 - I/O
Data In
Data Out
High Z Active Active
VIN = 0V, f = 1 MHz, TA = 25oC
VIN = 0V, f = 1 MHz, TA = 25oC
15
1
MODE POWER
Standby
Standby
Write
Read
2
2
3
Standby
Standby
Active
Active
8pF
8pF
Stock No. 23451-B 2/06 3
The specification is ADVANCE INFORMATION and subject to change without notice.
N04Q16yyC2B
NanoAmp Solutions, Inc.
SS
1
SS
V
IN,OUT
V
P
T
STG
T
T
SOLDER
CC
D
A
–0.3 to VCC+0.3
–0.3 to 4 V
–40 to 125
-40 to +85
260oC, 10sec
Absolute Maximum Ratings
Item Symbol Rating Unit
Voltage on any pin relative to V
Voltage on V
Soldering Temperature and Time
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Supply Relative to V
CC
Power Dissipation
Storage Temperature
Operating Temperature
Advance Information
V
500 mW
o
C
o
C
o
C
Operating Characteristics (Over Specified Temperature Range)
Item Symbol Device Conditions Min. Typ Max Unit
N04Q1612... 1.2V Core Device 1.1 1.2 1.3
Core Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V
V
CCQ
V
V
V
V
I
I
LO
CC
OH
OL
LI
N04Q1618... 1.8V Core Device 1.65 1.8 1.95
N04Q1625... 2.5V Core Device 2.3 2.5 2.8
N04Q1630... 3V Core Device 2.7 3.0 3.6
N04Q1612... 1.2V Core Device 1.1 3.3
N04Q1618... 1.8V Core Device 1.65 3.3
N04Q1625... 2.5V Core Device 2.3 3.3
N04Q1630... 3V Core Device 2.7 3.6
IH
IL
0.8 x
VCCQ
–0.3
IOH = -100uA VCC–0.2
IOL = 100uA
VIN = 0 to V
CC
OE = VIH or Chip
Disabled
VCC+0.3
0.2 x
VCCQ
0.2 V
0.5 µA
0.5 µA
V
V
V
V
Stock No. 23451-B 2/06 4
The specification is ADVANCE INFORMATION and subject to change without notice.
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