NAIS AQV214EHAZ, AQV214EHA, AQV214EH, AQV214EAZ, AQV214EAX Datasheet

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116
TESTING
VDE
(Reinforced type)(Standard type)
GU (General Use)-E Type [1-Channel (Form A) Type]
mm inch
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.9±0.2
.154±.008
8.8±0.05
.346±.002
6.4±0.05
.252±.002
3.6±0.2
.142±.008
FEATURES
1. Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
2. Control with low-level input signals
3. Controls v arious types of loads such as relays, motors, lamps and sole­noids.
4. Optical coupling for extremely high isolation
Unlike mechanical relays, the PhotoMOS relay combines LED and optoelectronic device to transfer signals using light for extremely high isolation.
5. Eliminates the need for a counter electromotive force pr otection diode in the drive circuits on the input side
6. Stable on resistance
7. Low-level off state leakage current
8. Eliminates the need for a po wer sup­ply to drive the power MOSFET
A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in easy circuit design and small PC board area.
9. Low thermal electromotive force (Approx. 1 µ V)
TYPICAL APPLICATIONS
• High-speed inspection machines
• T elephone equipment
• Data communication equipment
• Computer
TYPES
*Indicate the peak AC and DC values. Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
Type I/O isolation
Output rating*
Part No.
Packing quantity
Through hole
terminal
Surface-mount terminal
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
Standard 1,500 V AC
350 V 130 mA AQV210E AQV210EA AQV210EAX AQV210EAZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
400 V 120 mA AQV214E AQV214EA AQV214EAX AQV214EAZ
Reinforced 5,000 V
350 V 130 mA AQV210EH AQV210EHA AQV210EHAX AQV210EHAZ 400 V 120 mA AQV214EH AQV214EHA AQV214EHAX AQV214EHAZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25 ° C 77 ° F)
Item
Sym-
bol
T ype of
connec-
tion
AQV210E(A) AQV214E(A) AQV210EH(A) AQV214EH(A) Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
3 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (peak AC) V
L
350 V 400 V 350 V 400 V
Continuous load current I
L
A 0.13 A 0.12 A 0.13 A 0.12 A
A connection: Peak AC, DC; B, C connection: DC
B 0.15 A 0.13 A 0.15 A 0.13 A C 0.17 A 0.15 A 0.17 A 0.15 A
Peak load current I
peak
0.4 A 0.3 A 0.4 A 0.3 A
A connection: 100 ms (1 shot), V
L
=DC
Power dissipation P
out
500 mW
Total power dissipation P
T
550 mW
I/O isolation voltage V
iso
1,500 V AC 5,000 V AC
Temperature limits
Operating T
opr
–40 ° C to +85 ° C –40 ° F to +185 ° F Non-condensing at low temp.
Storage T
stg
–40 ° C to +100 ° C –40 ° F to +212 ° F
PhotoMOS RELAYS
AQV21 ❍ E
117
2. Electrical characteristics (Ambient temperature: 25 ° C 77 ° F)
For type of connection, see page 31.Note: Recommendable LED forward current Standard type: 5 mA Reinforced type: 5 to 10 mA
*Turn on/Turn off time
For Dimensions, see Page 27.
For Schematic and Wiring Diagrams, see Page 31.
For Cautions for Use, see Page 36.
Item
Sym-
bol
T ype of
connec-
tion
AQV210E(A) AQV214E(A) AQV210EH(A) AQV214EH(A) Condition
Input
LED operate current
Typical
I
Fon
1.1 mA 1.1 mA 1.6 mA 1.6 mA I
L
= Max.
Maximum 3 mA
LED turn off current
Minimum
I
Foff
0.3 mA 0.3 mA 0.4 mA 0.4 mA I
L
= Max.
Typical 1.0 mA 1.0 mA 1.5 mA 1.5 mA
LED dropout voltage
Typical
V
F
1.14 V (1.25 V at I
F
= 50 mA)
I
F
= 5 mA
Maximum 1.5 V
Output
On resistance
Typical
R
on
A
23 Ω
30 Ω
23 Ω
30 Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 35 Ω
50 Ω
35 Ω
50 Ω
Typical
R
on
B
11.5 Ω
22.5 Ω
11.5 Ω
22.5 Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 17.5 Ω
25 Ω
17.5 Ω
25 Ω
Typical
R
on
C
6.0 Ω
11.3 Ω
6.0 Ω
11.3 Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 8.8 Ω
12.5 Ω
8.8 Ω
12.5 Ω
Output capacitance Typical C
out
A 45 pF
I
F
= 0
V
B
= 0
f = 1 MHz
Off state leakage cur­rent
Maximum 1 µ A
I
F
= 0
V
L
= Max.
Transfer characteristics
Switching speed
Turn on time*
Typical
T
on
0.5 ms 0.5 ms 0.7 ms 0.7 ms
I
F
= 5 mA**
l
L
=Max.
Maximum 2.0 ms 2.0 ms 2.0 ms 2.0 ms
Turn off time*
Typical
T
off
0.05 ms
I
F
= 5 mA
I
L
= Max.
Maximum 1.0 ms
I/O capacitance
Typical
C
iso
0.8 pF
f = 1 MHz V
B
= 0
Maximum 1.5 pF
Initial I/O isolation resistance
Minimum R
iso
1,000 M Ω
500 V DC
Ton
Input
Output 10%
90%
Toff
REFERENCE DATA
1. Load current vs. ambient temperature char­acteristics
Allowable ambient temperature: –40 ° C to +85 ° C
–40 ° F to +185 ° F
Type of connection:A
2. On resistance vs. ambient temperature char­acteristics
Measured portion: between terminals 4 and 6; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC)
3. Turn on time vs. ambient temperature char­acteristics
LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC)
0
40
60
80
100
140
120
0204060–20 80 100–40
AQV210E (H)
Ambient temperature, °C
20
AQV214E (H)
Load current, mA
85
0
10
20
30
40
–40
50
0–20 20 40 60 80
AQV210E (H)
AQV214E (H)
85
Ambient temperature, °C
On resistance,
0
0.8
1.2
–40
2.0
0–20 20 40 60 80
0.4
1.6
85
AQV210EH, AQV214EH
AQV214E
AQV210E
Ambient temperature, °C
Turn on time, ms
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