MXIC MX29LV800TMC-90, MX29LV800TMI-70, MX29LV800TMI-90, MX29LV800TTC-70, MX29LV800TTC-70R Datasheet

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FEA TURES

PRELIMINARY

MX29LV800T/B

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE

3V ONLY FLASH MEMORY

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program operation

• Fast access time: 70/90ns

• Low power consumption

- 20mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with Erase Suspend capability.

- Automatically program and verify data at specified address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program and erase operation completion.

• Ready/Busy pin (RY/BY)

- Provides a hardware method of detecting program or erase operation completion.

• Sector protection

- Hardware method to disable any combination of sectors from program or erase operations

- Tempoary sector unprotect allows code changes in previously locked sectors.

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 2.3V

• Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-pin CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power supply Flash

GENERAL DESCRIPTION

The MX29LV800T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV800T/B is packaged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

The standard MX29L V800T/B off ers access time as fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29L V800T/B has separate chip enab le (CE) and output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV800T/B uses a command register to manage this functionality . The command register allo ws for 100%

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TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and prog ram cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV800T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

MX29LV800T/B

PIN CONFIGURATIONS

44 SOP(500 mil)

RY/BY

A18 A17

GND

OE Q0 Q8 Q1 Q9 Q2

Q10

Q11

2 3 4

12 13 14

MX29LV800T/B

15 16 17 18 19 20 21 22

48 TSOP (Standard Type) (12mm x 20mm)

A15 A14 A13 A12 A11 A10

A8 NC NC

RESET

NC NC

RY/BY

A18 A17

RESET

A10

A11

A12

A13

A14

A15

A16

BYTE

GND

Q15/A-1

Q14

Q13

Q12

VCC

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

MX29LV800T/B

PIN DESCRIPTION

SYMBOL PIN NAME

A0~A18 Address Input Q0~Q14 Data Input/Output Q15/A-1 Q15(Word mode)/LSB addr(Byte mode) CE Chip Enable Input WE Write Enable Input BYTE Word/Byte Selction input RESET Hardware Reset Pin OE Output Enable Input RY/BY Ready/Busy Output VCC Power Supply Pin (2.7V~3.6V) GND Ground Pin

A16

BYTE

GND

Q15/A-1

Q14

Q13

Q12

VCC

Q11

Q10

GND

48-Ball CSP Ball Pitch = 0.8 mm, Top View, Balls Facing Do wn (8mm x 9mm x 1.2mm for MX29LV800T/BXB and 6mm x 8mm x 1.3mm for MX29LV800T/BXE)

A BCDEFGH 6 A13 A12 A 14 A15 A16 BYTE Q15/A-1 GN D 5 A9 A8 A10 A11 Q7 Q14 Q13 Q6 4 WE RESET N C N C Q5 Q1 2 Vcc Q4 3 RY/BY N C A18 NC Q 2 Q10 Q1 1 Q3 2 A7 A17 A6 A5 Q0 Q8 Q9 Q1 1A3A4 A2A1A0CEOEGND

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BLOCK STRUCTURE Table 1: MX29LV800T SECTOR ARCHITECTURE

Sector Sector Size Address range Sector Address

Byte Mode W ord Mode Byte Mode (x8) Wor d Mode (x16) A1 8 A1 7 A1 6 A1 5 A14 A 13 A1 2

SA0 64Kbytes 32Kwords 00000h-0FFFFh 00000h-07FFFh 0000XXX SA1 64Kbytes 32Kwords 10000h-1FFFFh 08000h-0FFFFh 0001XX X SA2 64Kbytes 32Kwords 20000h-2FFFFh 10000h-17FFFh 0010XXX SA3 64Kbytes 32Kwords 30000h-3FFFFh 18000h-1FFFFh 0011XX X SA4 64Kbytes 32Kwords 40000h-4FFFFh 20000h-27FFFh 0100XXX SA5 64Kbytes 32Kwords 50000h-5FFFFh 28000h-2FFFFh 0101XX X SA6 64Kbytes 32Kwords 60000h-6FFFFh 30000h-37FFFh 0110XXX SA7 64Kbytes 32Kwords 70000h-7FFFFh 38000h-3FFFFh 0111XX X SA8 64Kbytes 32Kwords 80000h-8FFFFh 40000h-47FFFh 1000XXX SA9 64Kbytes 32Kwords 90000h-9FFFFh 48000h-4FFFFh 1001XX X SA10 64Kbytes 32Kwords A0000h-AFFFFh 50000h-57FFFh 1010XXX SA11 64Kbytes 32Kwords B0000h-BFFFFh 58000h-5FFFFh 1011XXX SA12 64Kbytes 32Kwords C0000h-CFFFFh 60000h-67FFFh 1100XXX SA13 64Kbytes 32Kwords D0000h-DFFFFh 68000h-6FFFFh 1101XXX SA14 64Kbytes 32Kwords E0000h-EFFFFh 70000h-77FFFh 1110XXX SA15 32Kbytes 16Kwords F0000h-F7FFFh 78000h-7BFFFh 11110XX SA16 8Kbytes 4Kwords F8000h-F9FFFh 7C000h-7CFFFh 111110 0 SA17 8Kbytes 4Kwords FA000h-FBFFFh 7D000h-7DFFFh 111110 1 SA18 16Kbytes 8Kwords FC000h-FFFFFh 7E000h-7FFFFh 111111X

Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.

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Table 2: MX29LV800B SECTOR ARCHITECTURE

Sector Sector Size Address range Sector Address

Byte Mode W ord Mode Byte Mode (x8) Wor d Mode (x16) A1 8 A1 7 A1 6 A1 5 A14 A 13 A1 2

SA0 16Kbytes 8Kwords 00000h-03FFFh 00000h-01FFFh 000000X SA1 8Kbytes 4Kwords 04000h-05FFFh 02000h-02FFFh 000001 0 SA2 8Kbytes 4Kwords 06000h-07FFFh 03000h-03FFFh 000001 1 SA3 32Kbytes 16Kwords 08000h-0FFFFh 04000h-07FFFh 00001XX SA4 64Kbytes 32Kwords 10000h-1FFFFh 08000h-0FFFFh 0001XX X SA5 64Kbytes 32Kwords 20000h-2FFFFh 10000h-17FFFh 0010XXX SA6 64Kbytes 32Kwords 30000h-3FFFFh 18000h-1FFFFh 0011XX X SA7 64Kbytes 32Kwords 40000h-4FFFFh 20000h-27FFFh 0100XXX SA8 64Kbytes 32Kwords 50000h-5FFFFh 28000h-2FFFFh 0101XX X SA9 64Kbytes 32Kwords 60000h-6FFFFh 30000h-37FFFh 0110XXX SA10 64Kbytes 32Kwords 70000h-7FFFFh 38000h-3FFFFh 0111XX X SA11 64Kbytes 32Kwords 80000h-8FFFFh 40000h-47FFFh 1000XX X SA12 64Kbytes 32Kwords 90000h-9FFFFh 48000h-4FFFFh 1001XX X SA13 64Kbytes 32Kwords A0000h-AFFFFh 50000h-57FFFh 1010XXX SA14 64Kbytes 32Kwords B0000h-BFFFFh 58000h-5FFFFh 1011XXX SA15 64Kbytes 32Kwords C0000h-CFFFFh 60000h-67FFFh 1100XXX SA16 64Kbytes 32Kwords D0000h-DFFFFh 68000h-6FFFFh 1101XXX SA17 64Kbytes 32Kwords E0000h-EFFFFh 70000h-77FFFh 1110XXX SA18 64Kbytes 32Kwords F0000h-FFFFFh 78000h-7FFFFh 1111XXX

Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.

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BLOCK DIAGRAM

MX29LV800T/B

CE OE

RESET

A0-A18

CONTROL INPUT

LOGIC

ADDRESS

LATCH

AND

BUFFER

PROGRAM/ERASE

HIGH VOLTAGE

X-DECODER

MX29L V800T/B

FLASH ARRA Y

Y-DECODER

Y-PASS GATE

SENSE

AMPLIFIER

PGM

DATA

ARRAY

SOURCE

WRITE

STATE

MACHINE

(WSM)

STATE

COMMAND

DATA DECODER

COMMAND

DATA LATCH

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Q0-Q15/A-1

PROGRAM

DATA LATCH

I/O BUFFER

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AUTOMATIC PROGRAMMING

The MX29L V800T/B is byte programmab le using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming time at room temperature of the MX29LV800T/B is less than 10 seconds.

AUTOMATIC PROGRAMMING ALGORITHM

MXIC's Automatic Programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. The device provides an unlock bypass mode with faster programming. Only two write cycles are needed to program a word or byte, instead of f our . A status bit similar to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation. Refer to write operation status, table 7, for more information on these status bits.

AUTOMATIC ERASE ALGORITHM

MXIC's Automatic Erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the status of the erasing operation.

Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry . During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE or CE, whichev er happens first.

MXIC's Flash technology combines years of EPROM experience to produce the highest lev els of quality, reliability , and cost effectiv eness. The MX29LV800T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are prog rammed by using the EPROM programming mechanism of hot electron injection.

AUTOMATIC CHIP ERASE

The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. T ypical erasure at room temper ature is accomplished in less than 25 second. The Automatic Erase algorithm automatically programs the entire array prior to electrical erase. The timing and v erification of electrical erase are controlled internally within the device.

AUTOMATIC SECTOR ERASE

The MX29L V800T/B is sector(s) erasab le using MXIC's Auto Sector Erase algorithm. The Automatic Sector Erase algorithm automatically programs the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. An erase operation can erase one sector, multiple sectors, or the entire device.

During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command register to respond to its full command set.

AUTOMATIC SELECT

The auto select mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on Q7~Q0. This mode is mainly adapted for programming equipment on the device to be programmed with its programming algorithm. When programming by high voltage method, automatic select mode requires VID (11.5V to 12.5V) on address pin A9 and other address pin A6, A1 and A0 as referring to Table 3. In addition, to access the automatic select codes in-system, the host can issue the automatic se-

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lect command through the command register without requiring VID , as shown in tab le4.

T o v erify whether or not sector being protected, the sector address must appear on the appropriate highest order address bit (see Table 1 and Table 2). The rest of address bits, as shown in table3, are don't care. Once all necessary bits have been set as required, the programming equipment may read the corresponding identifier code on Q7~Q0.

T ABLE 3. MX29LV800T/B AUTO SELECT MODE OPERATION

A18 A11 A9 A8 A6 A5 A1 A0

Description Mode CE OE WE | | | | Q15~Q0

A12 A10 A7 A2

Read Silicon ID L L H X X VID X L X L L C2 H Manfacturer Code Read Silicon ID Word L L H X X VID X L X L H 22DAH (Top Boot Block) Byte L L H X X VID X L X L H XXDAH Device ID Word L L H X X VID X L X L H 225BH (Bottom Boot Block) Byte L L H X X VID X L X L H XX5BH

XX01H

Sector Protection L L H SA X VID X L X H L (protected) Verification XX00H

(unprotected)

NOTE:SA=Sector Address, X=Don't Care , L=Logic Low , H=Logic High

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T ABLE 4. MX29LV800T/B COMMAND DEFINITIONS

First Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus

Command Bus Cycle Cycle Cycle Cycle Cycle Cycle

Cycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Reset 1 XXXH F0H Read 1 RA RD Read Silicon ID Word 4 555H AAH 2AAH 55H 555H 90H ADI DDI

Byte 4 AAAH AAH 555H 55H AAAH 90H ADI DDI Sector Protect Word 4 555H AAH 2AAH 55H 555H 90H (SA) XX00H Verify x02H XX01H

Byte 4 AAAH AAH 555H 55H AAAH 9 0H (SA) 00H

x04H 0 1 H

Porgram Word 4 555H AAH 2AAH 55H 555H A0H PA PD

Byte 4 AAAH AAH 555H 55H AAAH A0H PA PD Chip Erase Word 6 555H AAH 2AAH 5 5H 555H 80H 555H AAH 2AAH 55H 555H 10H

Byte 6 AAAH AAH 555H 55H AAAH 8 0H AAAH AAH 555H 55H AAAH 10 H Sector Erase Word 6 555H AAH 2AAH 5 5H 555H 80H 555H AAH 2AAH 55 H SA 30 H

Byte 6 AAAH AAH 555H 55H AAAH 8 0H AAAH AAH 555H 55H SA 30 H Sector Erase Suspend 1 XXXH B 0H Sector Erase Resume 1 XXXH 3 0H

Note:

1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care. (Refer to table 3) DDI = Data of Device identifier : C2H for manufacture code, 22DA/DA(Top), and 225B/5B(Bottom) for device code. X = X can be VIL or VIH RA=Address of memory location to be read. RD=Data to be read at location RA.

2.PA = Address of memory location to be programmed. PD = Data to be programmed at location PA. SA = Address of the sector to be erased.

3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or 555H to Address A10~A-1 in byte mode.

Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector Address (SA). Write Sequence may be initiated with A11~A18 in either state.

4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it means the sector is still not being protected.

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COMMAND DEFINITIONS

MX29LV800T/B

Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them

sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the

Sector Erase operation is in progress. in the improper sequence will reset the device to the read mode. Table 4 defines the valid register command

T ABLE 5. MX29LV800T/B BUS OPERA TION

ADDRESS Q8~Q15

DESCRIPTION CE O E WE A18 A10 A9 A 8 A6 A5 A1 A0 Q0~Q7 BYTE BYTE

A12 A11 A7 A2 =VIH =VIL

Read L L H AIN Dout Dout =High Z

DQ15=A-1 Write L H L AIN DIN(3) DIN Reset X X X X High Z High Z High Z Temproary sector unlock X X X AIN DIN DIN High Z Output Disable L H H X High Z High Z High Z Standby Vcc ± 0.3V X X X High Z High Z High Z Sector Protect L H L SA X X X L X H L DIN X X Sector Unprotect L H L X X X X H X H L D IN X X Sector Protection Verify L L H SA X VID X L X H L CODE(5) X X

NOTES:

1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.

2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.

3. Refer to Table 4 for valid Data-In during a write operation.

4. X can be VIL or VIH.

5. Code=00H/XX00H means unprotected. Code=01H/XX01H means protected.

6. A18~A12=Sector address for sector protect.

7.The sector protect and chip unprotect functions may also be implemented via programming equipment.

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REQUIREMENTS FOR READING ARRAY DATA

To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the pow er control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH.

The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory contect occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid address on the device address inputs produce valid data on the device data outputs. The device remains enab led for read access until the command register contents are altered.

WRITE COMMANDS/COMMAND SEQUENCES

T o program data to the de vice or erase sectors of memory , the sysytem must drive WE and CE to VIL, and OE to VIH.

The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The "byte Program Command Sequence" section has details on programming data to the device using both standard and Unlock Bypass command sequences.

An erase operation can erase one sector , multiple sectors , or the entire device. Table indicates the address space that each sector occupies. A "sector address" consists of the address bits required to uniquely select a sector. The "Writing specific address and data commands or sequences into the command register initiates device operations. Table 1 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data."section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation.

After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal reqister (which is separate from the memory array) on Q7-Q0. Standard read cycle timings apply in this mode.

Refer to the Autoselect Mode and Autoselect Command Sequence section for more information.

ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC Characteristics" section contains timing specification table and timing diagrams for write operations.

STANDBY MODE

When using both pins of CE and RESET, the device enter CMOS Standby with both pins held at Vcc ± 0.3V. IF CE and RESET are held at VIH, but not within the range of VCC ± 0.3V , the device will still be in the standb y mode, but the standby current will be larger . During Auto Algorithm operation, Vcc activ e current (Icc2) is required even CE = "H" until the oper ation is complated. The device can be read with standard access time (tCE) from either of these standby modes, before it is ready to read data.

OUTPUT DISABLE

With the OE input at a logic high level (VIH), output from the devices are disabled. This will cause the output pins to be in a high impedance state.

RESET OPERATION

The RESET pin provides a hardware method of resetting the device to reading arra y data. When the RESET pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET pluse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitated once the device is ready to accept another command sequence, to ensure data integrity

Current is reduced for the duration of the RESET pulse. When RESET is held at VSS±0.3V, the device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS±0.3V, the standby current will be greater.

The RESET pin may be tied to system reset circuitry . A system reset would that also reset the Flash memory, enabling the system to read the boot-up firm-ware from

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the Flash memory . If RESET is asserted during a program or erase

operation, the R Y/BY pin remains a "0" (b usy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The sysytem can thus monitor RY/BY to determine whether the reset operation is complete. If RESET is asserted when a program or erase operation is commpleted within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET pin returns to VIH.

Refer to the AC Characteristics tables for RESET parameters and to Figure 22 for the timing diagram.

READ/RESET COMMAND

The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data. The device remains enabled for reads until the command register contents are altered.

If program-fail or erase-fail happen, the write of F0H will reset the device to abort the operation. A valid command must then be written to place the device in the desired state.

SET-UP AUTOMATIC CHIP/SECTOR ERASE COMMANDS

Chip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed b y writing the "set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H or sector erase command 30H.

The Automatic Chip Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip Erase, the device will automatically program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. The erase and verify operations are completed when the data on Q7 is "1" at which time the device returns to the Read mode. The system is not required to pro vide any control or timing during these operations.

When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase verification command is required).

If the Erase operation was unsuccessful, the data on Q5 is "1"(see Table 7), indicating the erase operation exceed internal timing limit.

SILICON-ID READ COMMAND

Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the device resides in the target system. PROM programmers typically access signature codes by raising A9 to a high voltage(VID). Howev er, m ultiplexing high voltage onto address lines is not generally desired system design practice.

The MX29L V800T/B contains a Silicon-ID-Read operation to supple traditional PROM programming methodology . The oper ation is initiated by writing the read silicon ID command sequence into the command register. F ollowing the command write, a read cycle with A1=VIL, A0=VIL retrieves the manufacturer code of C2H/00C2H. A read cycle with A1=VIL, A0=VIH returns the device code of DAH/22D AH for MX29LV800T, 5BH/225BH for MX29LV800B.

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The automatic erase begins on the rising edge of the last WE or CE pulse, whichever happens first in the command sequence and terminates when the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops toggling for two consecutive read cycles at which time the device returns to the Read mode.

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T ABLE 6. SILICON ID CODE

Pins A0 A 1 Q15~Q8 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Code(Hex) Manufacture code Word VIL VIL 00H 1 1 0 0 0 0 1 0 00C2H

Byte VIL VIL X 1 1 0 0 0 0 1 0 C 2H Device code Word VIH VIL 22 H 1 1 0 1 1 0 1 0 22DAH for MX29LV800T Byte VIH VIL X 1 1 0 1 1 0 1 0 DAH Device code Word VIH VIL 22 H 0 1 0 1 1 0 1 1 225BH for MX29LV800B Byte VIH VIL X 0 1 0 1 1 0 1 1 5 BH Sector Protection Word X VIH X 0 0 0 0 0 0 0 1 01H (Protected) Verification Byte X VIH X 0 0 0 0 0 0 0 0 00H (Unprotected)

READING ARRAY DATA

The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read arra y data after completing an Automatic Program or Automatic Erase algorithm.

After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See rase Suspend/Erase Resume Commands” for more infor-mation on this mode. The system able the device for reading array data if Q5 goes high, or while in the autoselect mode. See the "Reset Command" section, next.

must issue the reset command to re-en-

RESET COMMAND

Writing the reset command to the device resets the device to reading array data. Address bits are don't care for this command.

The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in a program command sequence be-fore programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once prog ramming begins ,how ever, the device ignores reset commands until the operation is complete.

The reset command may be written between the sequence cycles in an SILICON ID READ command sequence. Once in the SILICON ID READ mode, the reset command data (also applies to SILICON ID READ during Erase Suspend).

must be written to return to reading array

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If Q5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend).

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SECTOR ERASE COMMANDS

The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. The system is not required to provide any control or timing during these operations.

When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. The erase and verify operations are complete when either the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops toggling for two consecutive read cycles at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations.

When using the Automatic sector Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the set-up command 80H. Two more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WE or CE, whichever happens later , while the command(data) is latched on the rising edge of WE or CE, whichever happens first. Sector addresses selected are loaded into internal register on the sixth falling edge of WE or CE, whichever happens later. Each successiv e sector load cycle started by the falling edge of WE or CE, whichever happens later must begin within 50us from the rising edge of the preceding WE or CE, whichev er happens first. Otherwise, the loading period ends and internal auto sector erase cycle starts. (Monitor Q3 to determine if the sector erase timer window is still open, see section Q3, Sector Erase Timer .) Any command other than Sector Erase(30H) or Erase Suspend(B0H) during the time-out period resets the device to read mode.

ERASE SUSPEND

This command only has meaning while the state machine is executing Automatic Sector Erase operation, and therefore will only be responded during Automatic Sector Erase operation. When the Erase Suspend Com-

mand is issued during the sector erase operation, the device requires a maximum 20us to suspend the sector erase operation. However , when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After this command has been executed, the command register will initiate erase suspend mode. The state machine will return to read mode automatically after suspend is ready . At this time, state machine only allows the command register to respond to Erase Resume, program data to , or read data from any sector not selected for erasure.

The system can determine the status of the program operation using the Q7 or Q6 status bits, just as in the standard program operation. After an erase-suspend program operation is complete, the system can once again read array data within non-suspended sectors.

ERASE RESUME

This command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions. Another Erase Suspend command can be written after the chip has resumed erasing.

WORD/BYTE PROGRAM COMMAND SEQUENCE

The device programs one byte of data for each program operation. The command sequence requires four bus cycles, and is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 1 shows the address and data requirements for the byte program command sequence.

When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using Q7, Q6, or RY/BY. See "Write Operation Status" for information on these status bits.

Any commands written to the device during the Em-

not

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bedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operat ion. The Byte Prog ram command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity.

Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a "0" back to a "1". Attempting to do so may halt the operation and set Q5 to "1" ,” or cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still "0". Only erase operations can convert a "0" to a "1".

WRITE OPERSTION STATUS

The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/ BY. T able 10 and the f ollowing subsections describe the functions of these bits. Q7, R Y/BY, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first.

this, the device outputs the "complement,” or "0".” The system must provide an address within any of the sectors selected for erasure to read valid status information on Q7.

After an erase command sequence is written, if all sectors selected for erasing are protected, Data P olling on Q7 is active for approximately 100 us, then the device returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.

When the system detects Q7 has changed from the complement to true data, it can read valid data at Q7-Q0 on the following read cycles. This is because Q7 may change asynchr onously with Q0-Q6 while Output Enable (OE) is asserted low.

RY/BY:Ready/Busy

Q7: Data Polling

The Data Polling bit, Q7, indicates to the host sys-tem whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data Polling is v alid after the rising edge of the final WE pulse in the program or erase command sequence.

During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed to Q7. This Q7 status also applies to progr amming during Er ase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the progr am address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data.

During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data P olling produces a "1" on Q7. This is analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase function changes all the bits in a sector to "1" prior to

The RY/BY is a dedicated, open-drain output pin that indicates whether an Automatic Erase/Program algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence. Since R Y/BY is an open-drain output, sever al RY/BY pins can be tied together in parallel with a pull-up resistor to Vcc.

If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.)If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode.

T able 7 sho ws the outputs for R Y/BY during write operation.

Q6:Toggle BIT I

Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence(prior to the program or erase operation), and during the sector time-

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During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6 to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete , Q6 stops toggling.

After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.

The system can use Q6 and Q2 together to determine whether a sector is actively erasing or is erase suspended. When the de vice is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling. When the device enters the Erase Suspend mode, Q6 stops toggling. Ho wever, the system m ust also use Q2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7.

If a program address falls within a protected sector, Q6 toggles for approximately 2 us after the program command sequence is written, then returns to reading array data.

Q6 also toggles during the erase-suspend-program mode, and stops toggling once the Automatic Program algorithm is complete.

Table 7 shows the outputs for Toggle Bit I on Q6.

Q2:Toggle Bit II

The "T oggle Bit II" on Q2, when used with Q6, indicates whether a particular sector is actively eraseing (that is, the Automatic Erase alorithm is in process), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE or CE, whichever happens first, in the command sequence.

Q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read cycles.) But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus , both status bits

are required for sectors and mode information. Refer to Table 7 to compare outputs for Q2 and Q6.

Reading Toggle Bits Q6/ Q2

Whenever the system initially begins reading toggle bit status, it must read Q7-Q0 at least twice in a row to determine whether a toggle bit is toggling. T ypically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on Q7-Q0 on the following read cycle.

Howe v e r, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high (see the section on Q5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as Q5 went high. If the toggle bit is no longer toggling, the device has successfuly completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must wr ite the reset command to return to reading array data.

The remaining scenario is that system initially determines that the toggle bit is toggling and Q5 has not gone high. The system may continue to monitor the toggle bit and Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation.

Q5 Exceeded Timing Limits

Q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). Under these conditions Q5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data Polling and Toggle Bit are the only operating functions of the device under this condition.

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If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. Howe ver , other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute prog ram or erase command sequence. This allows the system to continue to use the other active sectors in the device.

If this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad.

T able 7. WRITE OPERATION STA TUS

Status Q7 Q6 Q5 Q3 Q2 RY/BY

Byte Program in Auto Program Algorithm Q7 Toggle 0 N/A N o 0

If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused).

The time-out condition will not appear if a user tries to program a non blank location without erasing. Please note that this is not a device failure condition since the device was incorrectly used.

(Note1) (Note2)

Toggle

Auto Erase Algorithm 0 Toggle 0 1 Toggle 0

Erase Suspend Read 1 N o 0 N/A Toggle 1

In Progress

Erase Suspended Mode Erase Suspend Read Data Data Data Data Data 1

Byte Program in Auto Program Algorithm Q7 Toggle 1 N/A N o 0

Exceeded Time Limits Auto Erase Algorithm 0 Toggle 1 1 Toggle 0

Erase Suspend Program Q7 Toggle 1 N/A N/A 0

(Erase Suspended Sector) Toggle

(Non-Erase Suspended Sector) Erase Suspend Program Q7 Toggle 0 N/A N/A 0

Toggle

Note:

1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits. See "Q5:Exceeded Timing Limits " for more information.

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Q3 Sector Erase Timer

After the completion of the initial sector erase command sequence, the sector erase time-out will begin. Q3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence.

If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, Q3 may be used to determine if the sector erase timer window is still open. If Q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If Q3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the second status check, the command may not have been accepted.

POWER SUPPLY DECOUPLING

In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND .

POWER-UP SEQUENCE

The MX29L V800T/B po wers up in the Read only mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences.

TEMPORARY SECTOR UNPROTECT

This feature allows temporary unprotection of previously protected sector to change data in-system. The T emporary Sector Unprotect mode is activated by setting the RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased as un-protected sector. Once VID is remove from the RESET pin,all the previously protected sectors are protected again.

DATA PROTECTION

The MX29LV800T/B is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to pre vent inadve rtent write cycles resulting from VCC po wer-up and power-down transition or system noise.

WRITE PULSE "GLITCH" PROTECTION

Noise pulses of less than 5ns(typical) on CE or WE will not initiate a write cycle.

LOGICAL INHIBIT

Writing is inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. T o initiate a write cycle CE and WE must be a logical zero while OE is a logical one.

SECTOR PROTECTION

The MX29LV800T/B features hardware sector protection. This feature will disable both program and erase operations for these sectors protected. To activate this mode, the programming equipment must force VID on address pin A9 and OE (suggest VID = 12V). Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated on the rising edge. Please refer to sector protect algorithm and waveform.

T o verify programming of the protection circuitry , the programming equipment must force VID on address pin A9 ( with CE and OE at VIL and WE at VIH). When A1=VIH, A0=VIL, A6=VIL, it will produce a logical "1" code at device output Q0 f or a protected sector . Otherwise the device will produce 00H for the unprotected sector. In this mode, the addresses,except for A1, are don't care. Address locations with A1 = VIL are reserved to read manufacturer and device codes.(Read Silicon ID)

It is also possible to determine if the sector is protected in the system by writing a Read Silicon ID command. Perf orming a read operation with A1=VIH, it will produce a logical "1" at Q0 for the protected sector .

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CHIP UNPROTECT

The MX29LV800T/B also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code. It is recommended to protect all sectors before activating chip unprotect mode.

To activate this mode, the programming equipment must force VID on control pin OE and address pin A9. The CE pins must be set at VIL. Pins A6 must be set to VIH. Refer to chip unprotect algorithm and waveform for the chip unprotect algorithm. The unprotection mechanism begins on the falling edge of the WE pulse and is terminated on the rising edge.

It is also possible to determine if the chip is unprotected in the system by writing the Read Silicon ID command. Performing a read operation with A1=VIH, it will produce 00H at data outputs(Q0-Q7) for an unprotected sector.

MX29LV800T/B

It is noted that all sectors are unprotected after the chip unprotect algorithm is completed.

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