MXIC MX27C2048PC-10, MX27C2048PC-15, MX27C2048PC-70, MX27C2048PC-90, MX27C2048QC-12 Datasheet
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FEATURES
• 128K x 16 organization(MX27C2048, JEDEC pin
out)
• 256K x 8 or 128K x 16 organization(MX27C2100,
ROM pin out compatible)
• +12.5V programming voltage
• Fast access time: 55/70/90/120/150 ns
• Totally static operation
• Completely TTL compatible
• Operating current: 40mA
• Standby current: 100uA
• Package type:
- 40 pin plastic DIP
- 44 pin PLCC(MX27C2048)
- 40 pin TSOP(I)(MX27C2048)
GENERAL DESCRIPTION
The MX27C2100/2048 is a 5V only, 2M-bit, One Time
Programmable Read Only Memory. It is organized as
128K words by 16 bits per word(MX27C2048), 256K x 8
or 128K x 16(MX27C2100), operates from a single + 5
volt supply, has a static standby mode, and features fast
single address location programming. All programming
signals are TTL levels, requiring a single pulse. For
programming outside from the system, existing EPROM
P/N: PM0158
1
REV. 4.3, AUG. 22, 2000
programmers may be used. The MX27C2100/2048
supports a intelligent fast programming algorithm which
can result in programming times of less than one minute.
This EPROM is packaged in industry standard 40 pin
dual-in-line packages, 44 lead PLCC, and 40 lead
TSOP(I) packages.
PIN CONFIGURATIONS
PDIP(MX27C2048)
BLOCK DIAGRAM (MX27C2048)
PLCC(MX27C2048)
40-TSOP(I)10x14mm (MX27C2048)
MX27C2100/27C2048
2M-BIT [256Kx8/128x16] CMOS EPROM
MX27C2048
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
VPP
CE
Q15
Q14
Q13
Q12
Q11
Q10
Q9
Q8
GND
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
OE
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
PGM
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
MX27C2048
Q12
Q11
Q10
Q9
Q8
GND
NC
Q7
Q6
Q5
Q4
A13
A12
A11
A10
A9
GND
NC
A8
A7
A6
A5
Q13
Q14
Q15CEVPPNCVCC
PGM
A16
A15
A14
Q3Q2Q1
Q0
OE
NC
A0A1A2A3A4
64440
39
34
29
7
12
17
18 23 28
1
A9
A10
A11
A12
A13
A14
A15
A16
PGM
VCC
VPP
CE
Q15
Q14
Q13
Q12
Q11
Q10
Q9
Q8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
GND
A8
A7
A6
A5
A4
A3
A2
A1
A0
OE
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
GND
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
MX27C2048
CONTROL
LOGIC
OUTPUT
BUFFERS
Q0~Q15
CE
PGM
OE
A0~A16
ADDRESS
INPUTS
Y-DECODER
X-DECODER
Y-SELECT
2M BIT
CELL
MAXTRIX
VCC
VSS
VPP
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2
MX27C2100/27C2048
P/N: PM0158 REV. 4.3, AUG. 22, 2001
PIN CONFIGURATIONS
PDIP(MX27C2100)
BLOCK DIAGRAM (MX27C2100)
SYMBOL PIN NAME
A0~A16 Address Input
Q0~Q14 Data Input/Output
CE Chip Enable Input
OE Output Enable Input
BYTE/VPP Word/Byte Selection
/Program Supply Voltage
Q15/A-1 Q15(Word mode)/LSB addr. (Byte mode)
VCC Power Supply Pin (+5V)
GND Ground Pin
PIN DESCRIPTION(MX27C2100)
PIN DESCRIPTION(MX27C2048)
TRUTH TABLE OF BYTE FUNCTION(MX27C2100)
BYTE MODE(BYTE = GND)
CE OE Q15/A-1 MODE Q0-Q7 SUPPLY CURRENT
H X X Non selected High Z Standby(ICC2)
L H X Non selected High Z Operating(ICC1)
L L A-1 input Selected DOUT Operating(ICC1)
WORD MODE(BYTE = VCC)
CE OE Q15/A-1 MODE Q0-Q14 SUPPLY CURRENT
H X High Z Non selected High Z Standby(ICC2)
L H High Z Non selected High Z Operating(ICC1)
L L DOUT Selected DOUT Operating(ICC1)
NOTE : X = H or L
SYMBOL PIN NAME
A0~A16 Address Input
Q0~Q15 Data Input/Output
CE Chip Enable Input
OE Output Enable Input
PGM Program Enable Input
VPP Program Supply Voltage
VCC Power Supply Pin (+5V)
GND Ground Pin
MX27C2100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
NC
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
CONTROL
LOGIC
OUTPUT
BUFFERS
Q0~Q14
Q15/A-1
CE
OE
BYTE/VPP
A0~A16
ADDRESS
INPUTS
Y-DECODER
X-DECODER
Y-SELECT
2M BIT
CELL
MAXTRIX
VCC
GND
.
.
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3
MX27C2100/27C2048
P/N: PM0158 REV. 4.3, AUG. 22, 2001
FUNCTIONAL DESCRIPTION
THE PROGRAMMING OF THE MX27C2100/2048
When the MX27C2100/2048 is delivered, or it is
erased, the chip has all 2M bits in the "ONE", or HIGH
state. "ZEROs" are loaded into the MX27C2100/2048
through the procedure of programming.
For programming, the data to be programmed is applied
with 16 bits in parallel to the data pins.
VCC must be applied simultaneously or before VPP, and
removed simultaneously or after VPP. When
programming an MXIC EPROM, a 0.1uF capacitor is
required across VPP and ground to suppress spurious
voltage transients which may damage the device.
FAST PROGRAMMING
The device is set up in the fast programming mode when
the programming voltage VPP = 12.75V is applied, with
VCC = 6.25 V and PGM = VIL(or OE = VIH) (Algorithm
is shown in Figure 1). The programming is achieved by
applying a single TTL low level 100us pulse to the PGM
input after addresses and data line are stable. If the data
is not verified, an additional pulse is applied for a
maximum of 25 pulses. This process is repeated while
sequencing through each address of the device. When
the programming mode is completed, the data in all
address is verified at VCC = VPP = 5V ± 10%.
PROGRAM INHIBIT MODE
Programming of multiple MX27C2100/2048's in parallel
with different data is also easily accomplished by using
the Program Inhibit Mode. Except for CE and OE, all like
inputs of the parallel MX27C2100/2048 may be
common. A TTL low-level program pulse applied to an
MX27C2100/2048 CE input with VPP = 12.5 ± 0.5 V will
program the MX27C2100/2048. A high-level CE input
inhibits the other MX27C2100/2048s from being
programmed.
PROGRAM VERIFY MODE
Verification should be performed on the programmed
bits to determine that they were correctly programmed.
The verification should be performed with OE and CE at
VIL(for MX27C2048), OE at VIL, CE at VIH(for
MX27C2100) and VPP at its programming voltage.
AUTO IDENTIFY MODE
The auto identify mode allows the reading out of a binary
code from an EPROM that will identify its manufacturer
and device type. This mode is intended for use by
programming equipment for the purpose of
automatically matching the device to be programmed
with its corresponding programming algorithm. This
mode is functional in the 25°C ± 5°C ambient
temperature range that is required when programming
the MX27C2100/2048.
To activate this mode, the programming equipment
must force 12.0 ± 0.5 V on address line A9 of the device.
Two identifier bytes may then be sequenced from the
device outputs by toggling address line A0 from VIL to
VIH. All other address lines must be held at VIL during
auto identify mode.
Byte 0 ( A0 = VIL) represents the manufacturer code,
and byte 1 (A0 = VIH), the device identifier code. For the
MX27C2100/2048, these two identifier bytes are given
in the Mode Select Table. All identifiers for manufacturer
and device codes will possess odd parity, with the MSB
(Q15) defined as the parity bit.
READ MODE
The MX27C2100/2048 has two control functions, both
of which must be logically satisfied in order to obtain data
at the outputs. Chip Enable (CE) is the power control
and should be used for device selection. Output Enable
(OE) is the output control and should be used to gate
data to the output pins, independent of device selection.
Assuming that addresses are stable, address access
time (tACC) is equal to the delay from CE to output (tCE).
Data is available at the outputs tOE after the falling edge
of OE's, assuming that CE has been LOW and
addresses have been stable for at least tACC - t OE.
WORD-WIDE MODE
With BYTE/VPP at VCC ± 0.2V outputs Q0-7 present
data Q0-7 and outputs Q8-15 present data Q8-15, after
CE and OE are appropriately enabled.
4
MX27C2100/27C2048
P/N: PM0158 REV. 4.3, AUG. 22, 2001
BYTE-WIDE MODE
With BYTE/VPP at GND ± 0.2V, outputs Q8-15 are tristated. If Q15/A-1 = VIH, outputs Q0-7 present data bits
Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits
Q0-7.
STANDBY MODE
The MX27C2100/2048 has a CMOS standby mode
which reduces the maximum VCC current to 100 uA. It
is placed in CMOS standby when CE is at VCC ± 0.3 V.
The MX27C2100/2048 also has a TTL-standby mode
which reduces the maximum VCC current to 1.5 mA. It
is placed in TTL-standby when CE is at VIH. When in
standby mode, the outputs are in a high-impedance
state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a twoline control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not
occur.
It is recommended that CE be decoded and used as the
primary device-selecting function, while OE be made a
common connection to all devices in the array and
connected to the READ line from the system control bus.
This assures that all deselected memory devices are in
their low-power standby mode and that the output pins
are only active when data is desired from a particular
memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby
conditions, transient current peaks are produced on the
rising and falling edges of Chip Enable. The magnitude
of these transient current peaks is dependent on the
output capacitance loading of the device. At a minimum,
a 0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
Vcc and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM
arrays, a 4.7 uF bulk electrolytic capacitor should be
used between VCC and GND for each eight devices.
The location of the capacitor should be close to where
the power supply is connected to the array.
5
MX27C2100/27C2048
P/N: PM0158 REV. 4.3, AUG. 22, 2001
MODE SELECT TABLE (MX27C2100)
BYTE/
MODE CE OE A9 A0 Q15/A-1 VPP(5) Q8-14 Q0-7
Read (Word) VIL VIL X X Q15 Out VCC Q8-14 Out Q0-7 Out
Read (Upper Byte) VIL VIL X X VIH GND High Z Q8-15 Out
Read (Lower Byte) VIL VIL X X VIL GND High Z Q0-7 Out
Output Disable VIL VIH X X High Z X High Z High Z
Standby VIH X X X High Z X High Z High Z
Program VIL VIH X X Q15 In VPP Q8-14 In Q0-7 In
Program Verify VIH VIL X X Q15 Out VPP Q8-14 Out Q0-7 Out
Program Inhibit VIH VIH X X High Z VPP High Z High Z
Manufacturer Code(3) VIL VIL VH VIL 0B VCC 00H C2H
Device Code(3) VIL VIL VH VIH 0B VCC 01H 8AH
NOTES: 1. VH = 12.0 V ± 0.5 V
2. X = Either VIH or VIL
3. A1 - A8 = A10 - A16 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltage during
programming.
NOTES: 1. VH = 12.0V ± 0.5V
2. X = Either VIH or VIL.
3. A1 - A8, A10 - A16 = VIL(For auto select)
4. See DC Programming Characteristics for VPP voltages.
5. BYTE/VPP is intended for operation under DC Voltage
conditions only.
MODE SELECT TABLE (MX27C2048)
PINS
MODE CE OE PGM A0 A9 VPP OUTPUTS
Read VIL VIL VIH X X VCC DOUT
Output Disable VI L VIH VIH X X VCC High Z
Standby (TTL) VIH X X X X VCC High Z
Standby (CMOS) VCC±0.3V X X X X VCC High Z
Program VIL VIH VIL X X VPP DIN
Program Verify VIL VIL VIH X X VPP DOUT
Program Inhibit VIH X X X X VPP High Z
Manufacturer Code(3) VIL VIL X VIL VH VCC 00C2H
Device Code(3) VIL VIL X VIH VH VCC 0122H
6
MX27C2100/27C2048
P/N: PM0158 REV. 4.3, AUG. 22, 2001
ST AR T
ADDRESS = FIRST LOCATION
VCC = 6.25V
VPP = 12.75V
X = 0
PROGRAM ONE 50us PULSE
INCREMENT X
X = 25?
VERIFY BYTE
LAST ADDRESS
VCC = VPP = 5.25V
DEVICE PASSED
VERIFY ALL BYTES
?
DEVICE FAILED
INCREMENT ADDRESS
INTERACTIVE
SECTION
VERIFY SECTION
FAIL
PASS
YES
PASS
NO
YES
NO
FAIL
FIGURE 1. FAST PROGRAMMING FLOW CHART
FAIL
?
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