Technical Specifications
MEAs for MEA2100-(2x)60-Systems and MEA1060 Amplifiers
Temperature compatibility
Dimension (W x D x H)
Base material
Contact pad
Track material
Electrode diameter
Interelectrode distance
(centre to centre)
Electrode height
Electrode type
Isolation type
Electrode impedance
Electrode layout grid
Number of recording electrodes
Number of reference electrodes
Ring
Ring Options:
Please see the last page
60MEA100/10-ITO,
60MEA100/10iR-ITO,
60MEA200/10-ITO,
60MEA200/10iR-ITO
0 °C – 125 °C
49 mm x 49 mm x 1 mm
Glass
Transparent: Indium tin oxide (ITO)
Transparent: Indium tin oxide (ITO)
10 µm
200 μm
Planar
Titanium nitride (TiN) electrodes
Silicon nitride (SiN) 500 nm
(PECVD)
250 – 400 kΩ for 10 µm electrodes
8 x 8
60 (without iR), 59 (with iR)
1 internal reference electrode (iR)
- OR - without internal reference
electrode
Without ring
Glass ring
Plastic ring without thread
Plastic ring with thread
60MEA100/10iR-Ti
60MEA200/30-Ti,
60MEA200/10iR-TI,
60MEA200/30iR-Ti
(60MEA500/10iR-Ti,
60MEA500/30iR-Ti)
0 °C – 125 °C
49 mm x 49 mm x 1 mm
Glass
Opaque: Titanium nitride (TiN)
Opaque: Titanium (Ti)
10 µm and 30 μm
100 and 200 µm
(500 μm: 6 x 10 grid)
Planar
Titanium nitride (TiN) electrodes
Silicon nitride (SiN) 500 nm
(PECVD)
30 – 50 kΩ for 30 µm electrodes
250 – 400 kΩ for 10 µm
electrodes
8 x 8
(6 x 10: 500/10iR-Ti, 500/30iR-Ti)
60 (without iR), 59 (with iR)
1 internal reference electrode (iR)
- OR - without internal reference
electrode
Without ring
Glass ring
Plastic ring without thread
Plastic ring with thread
60SquareMEA200/50iR-Ti
0 °C – 125 °C
49 mm x 49 mm x 1 mm
Glass
Opaque: Titanium nitride (TiN)
Opaque: Titanium (Ti)
Square electrodes: 50 x 50 μm
200 μm
Planar
Titanium nitride (TiN) electr.
Silicon nitride (SiN) 500 nm
(PECVD)
30 – 50 kΩ for 30 µm
electrodes
8 x 8
59 recording electrodes
1 internal reference electrode
(iR)
Without ring
Glass ring
Plastic ring without thread
Plastic ring with thread
60PedotMEA200/30iR-Au
0 °C – 125 °C
49 mm x 49 mm x 1 mm
Glass
Opaque: Titanium / Gold (Ti-Au)
Opaque: Titanium / Gold (Ti-Au))
30 μm
200 μm
Planar
PEDOT-CNT electrodes
Silicon nitride (SiN) 500 nm
(PECVD)
– 20 kΩ
8 x 8
59 recording electrodes
1 internal reference electrode
(iR)
Without ring
Glass ring
Plastic ring without thread
Plastic ring with thread
© 2014 Multi Channel Systems MCS GmbH
Technical Specifications
MEAs for MEA2100-(2x)60-Systems and MEA1060 Amplifiers
Temperature compatibility
Dimension (W x D x H)
Base material
Contact pad
Track material
Electrode diameter
Interelectrode distance
Electrode height
Electrode type
Isolation type
Electrode impedance
Electrode layout grid
Num. of record. electrodes
Num. of ref. electrodes
Ring
Thin MEA:
60ThinMEA30/10iR-ITO
60ThinMEA200/30iR-ITO
60ThinMEA100/10iR-ITO
0 °C – 125 °C
49 x 49 x 1 mm
Glass part 180 µm
Glass on ceramic base
Indium tin oxide (ITO)
Indium tin oxide (ITO)
10 µm and 30 μm
30 µm or 200 μm
Planar
Titanium nitride (TiN)
Silicon nitride (SiN)
500 nm (PECVD)
30 – 50 kΩ for 30 µm
electrodes
250 – 400 kΩ for 10 µm
electrodes
8 x 8. ThinMEA100/10iR
ThinMEA200/30iR
2 x (5 x 6):
ThinMEA30/10iR
500 µm between fields
59 electrodes
1 internal reference
electrode (iR)
Without ring
Glass ring
Plastic ring w/o thread
Plastic ring with thread
EcoMEA:
60EcoMEA
0 °C – 125 °C
49 x 49 x 1 mm
PCB (prin. circuit board)
Gold (Au)
Gold (Au)
100 μm
700 μm
Planar
Gold (Au)
PCB (printed circuit board)
~ 30 kΩ
8 x 8
59 electrodes
1 internal reference
electrode (iR)
Without ring
Glass ring
Plastic ring w/o thread
Plastic ring with thread
EcoMEA-Glass:
60EcoMEA-Glass
0 °C – 125 °C
49 x 49 x 1 mm
Glass
Gold (Au)
Gold (Au)
100 μm
700 μm
Planar
Gold (Au)
SU-8 (1-2 µm)
~ 30 kΩ
8 x 8
59 electrodes
1 internal reference
electrode (iR)
Without ring
Glass ring
Plastic ring w/o thread
Plastic ring with thread
Hexa MEA:
60HexaMEA-ITO
60HexaMEA-Ti
(60HexaMEA40/10iR-ITO)
0 °C – 125 °C
49 x 49 x 1 mm
Glass
ITO -or-Titanium nitride
ITO -or- Titanium
(Indium tin oxide (ITO))
10, 20, 30 μm (10 µm)
30, 60, 90 μm (40 µm)
Planar
Titanium nitride (TiN)
Silicon nitride (SiN)
500 nm (PECVD)
30 – 50 kΩ for 30 µm
electrodes
250 – 400 kΩ for
10 and 20 µm electrode
hexagonal
59 (with iR) 60 (without)
1 internal reference
electrode (iR)
Without ring
Glass ring
Plastic ring w/o thread
Plastic ring with thread
High Dense MEA:
60HD30/10iR-ITO
0 °C – 125 °C
49 x 49 x 1 mm
Glass
Indium tin oxide (ITO)
10 μm
30 μm
Planar
Titanium nitride (TiN)
Silicon nitride (SiN)
500 nm (PECVD)
250 - 400 kΩ
2 x (5 x 6)
500 or 150 μm between
the electrode fields
59 electrodes
1 internal reference
electrode (iR)
Without ring
Glass ring
Plastic ring w/o thread
Plastic ring with thread
© 2014 Multi Channel Systems MCS GmbH
Technical Specifications
MEAs for MEA2100-(2x)60-Systems and MEA1060 Amplifiers
Temperature compatibility
Dimension (W x D x H)
Base material
Contact pad
Track material
Electrode diameter
Interelectrode distance
Electrode height
Electrode type
Isolation type
Electrode impedance
Electrode layout grid
Num. of recording electrodes
Num. of reference electrodes
Ring
Perforated MEA:
60pMEA100/30iR-Ti
60pMEA200/30iR-Ti
10 °C – 50 °C
49 x 49 x 1 mm
Polyimide foil (2611)
with perforation
on ceramic or glass carrier
TiAu (Titan, Gold)
TiAuTi (Titan, Gold, Titan)
30 µm
200 µm: 8 x 8 grid
100 µm: 6 x 10 grid
Planar
TiN electrodes (Titanium nit.)
Polyimide foil (2610) isolator
30 - 50 kΩ
8 x 8: pMEA200/30iR-Ti
6 x 10: pMEA100/30iR-Ti
59 electrodes
1 internal reference electrode (iR)
Without ring
Glass ring
Plastic ring w/o thread
Plastic ring with thread
6 Well MEA:
6wellMEA200/30iR-Ti
0 °C – 125 °C
49 x 49 x 1 mm
Glass
Titanium nitride (TiN)
Titanium (Ti)
30 µm
200 µm
Planar
TiN electrodes
(Titanium nitride)
Silicon nitride (SiN)
500 nm (PECVD)
30 - 50 kΩ
3 x 3 in each of the 6 wells
54 electrodes
6 internal reference electrodes (iR),
one in each well
Without ring
Macrolon ring 6 wells, with round
chambers (rcr) or triangular
chambers (tcr)
Stimulation MEA:
60StimMEA200/30-Ti
0 °C – 125 °C
49 x 49 x 1 mm
Glass
Ti nitride (TiN)
Titanium (Ti)
30 µm
200 µm
Planar
TiN electrodes including
4 pairs of stimulation elect.
Silicon nitride (SiN)
500 nm (PECVD)
30 - 50 kΩ
8 x 8
60 electrodes
without internal reference electrode
Without ring
Glass ring
Quadrant MEA:
4QMEA1000iR-Ti
0 °C – 125 °C
49 x 49 x 1 mm
Glass
Titanium nitride (TiN)
Titanium (Ti)
30 µm
200, 500, 1000 µm
Planar
TiN electrodes
(Titanium nitride)
Silicon nitride (SiN)
500 nm (PECVD)
30 - 50 kΩ
4 quadrants (13 electrodes each)
and centre line (7 electrodes)
59 electrodes
1 internal reference electrode (iR)
Without ring
Glass ring
Plastic ring w/o thread
Plastic ring with thread
© 2014 Multi Channel Systems MCS GmbH