MSK MSK4400S, MSK4400U, MSK4400D Datasheet
ISO 9001 CERTIFIED BY DSCC
10 AMP, 75V, 3 PHASE MOSFET
BRIDGE WITH INTELLIGENT
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, M/Y. 13088 (315) 701-6751
INTEGRATED GATE DRIVE
FEATURES:
75 Volt Motor Supply Voltage
10 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge
100% Duty Cycle High Side Conduction Capable
Suitable for PWM Applications from DC to 100KHz
Shoot-Through/Cross Conduction Protection
Undervoltage Lockout Protection
Programmable Dead-Time Control
Low Active Enable for Bridge Shutdown Control
Isolated Base Plate Design for High Voltage Isolation Plus Good Thermal Transfer
DESCRIPTION:
The MSK 4400 is a 3 phase MOSFET bridge plus drivers in a convenient isolated baseplate package. The
module is capable of 10 amps of output current and 75 volts of DC bus voltage. It has a full line of protection features,
including undervoltage lockout protection of the bias voltage, cross conduction control and a user programmable dead-time
control for shoot-through elimination. In addition, the bridge may be shut down by using the ENABLE control. The MSK
4400 provides good thermal conductivity for the MOSFETs due to an isolated plate design that allows direct heat sinking of
the device without insulators.
4400
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
3 Phase Brushless DC
Servo Control
Fin Actuator Control
Gimbal Control
3 Phase AC
Induction Motor Control
HVAC Blower Control
PIN-OUT INFORMATION
N/C
1
N/C
2
N/C
3
BH
4
BL
5
AL
6
AH
7
GND
8
SWR
9
VBIAS
1
10
20
19
18
17
16
15
14
13
12
11
BO
BO
CV+
CV+
CO
CO
N/C
CH
CL
EN
AV+
28
AV+
27
AO
26
AO
25
RSENSE
24
RSENSE
23
BV+
22
BV+
21
Rev. E 6/01
ABSOLUTE MAXIMUM RATINGS
High Voltage Supply
V+
Bias Supply
VBIAS
Logic Input Voltages
VIND
Continuous Output Current
IOUT
Peak Output Current
IPK
○○○○○○○○○○○○○○○○○○○○
○○○○○○○○○○○○○○○
○○○○
○○○○○○○○○○○○○○○
-0.3V to VBIAS +0.3V
○○○○○○○○○○○
ELECTRICAL SPECIFICATIONS
Parameter
CONTROL SECTION
VBIAS Quiescent Current 4
VBIAS Operating Current 4
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Resistance (Each FET) 1
Voltage Drop Across Bridge Phase 2 4
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
Enable Turn-On Prop Delay (Lower)
Enable Turn-Off Prop Delay (Lower)
Enable Turn-On Prop Delay (Upper)
Enable Turn-Off Prop Delay (Upper)
Dead Time
Dead Time 4
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
75V
16V
10A
25A
Test Condition
@ 25°C unless otherwise specified
All Inputs Off
f=20KHz, 50% Duty Cycle
VIN=0V
VIN=5V
ID=100µA, All Inputs Off
VDS=70V
ID=25A
ID=10A
V+=38V
ID=25A Peak
SWR Resistor=∞
SWR Resistor=∞
SWR=Open
SWR=12K
ISD=10A
ISD=10A, di/dt=100A/µS
Thermal Resistance
θJC
Storage Temperature Range
TST
Lead Temperature Range
TLD
(10 Seconds)
Case Operating Temperature
TC
Junction Temperature
TJ
○○○○○○○○○○○○○
-55°C to +150°C
○○○
○○○○○○○○○○
-40°C to +125°C
○○○
○○○○○○○○○○○○
MSK 4400
Min.
-
-
5.75
6.2
-
2.7
60
-1
75
-
-
-
-
-
-
-
-
-
6.0
0.3
-
-
Typ. 3
6
22
6.6
7.1
-
-
100
-
-
-
-
1.3
62
58
100
100
2
2
7.0
0.5
-
120
Max.
135
0.033
7
25
7.5
8.0
0.8
-
+1
-
50
1.5
-
-
-
-
-
-
8.0
0.7
1.7
-
3.9 C/W
+300°C
+150°C
Units
mAmp
mAmp
Volts
Volts
Volts
Volts
µAmp
µAmp
V
µAmp
Ω
VOLTS
nSec
nSec
µSec
µSec
µSec
µSec
µSec
µSec
Volts
nSec
NOTES:
1 Use for maximum MOSFET junction temperature calculations.
2 Use for overall efficiency and dissipation calculations.
3 Typical parameters are representative of actual device performance but are for reference only.
4 Parameter is 100% tested on production devices. All other parameters are guaranteed.
2
Rev.E 6/01
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