MSK MSK4301HU, MSK4301HD, MSK4301ES, MSK4301U, MSK4301HS Datasheet
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ISO 9001 CERTIFIED BY DSCC
29 AMP, 75V, 3 PHASE MOSFET
BRIDGE WITH INTELLIGENT
4301
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088 (315) 701-6751
INTEGRATED GATE DRIVE
FEATURES:
75 Volt Motor Supply Voltage
29 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge
100% Duty Cycle High Side Conduction Capable
Suitable for PWM Applications from DC to 100KHz
Shoot-Through/Cross Conduction Protection
Undervoltage Lockout Protection
Programmable Dead-Time Control
Low Active Enable for Bridge Shutdown Control
Isolated Package Design for High Voltage Isolation Plus Good Thermal Transfer
Available with Three Lead Bend Options
MIL-PRF-38534 QUALIFIED
DESCRIPTION:
The MSK 4301 is a 3 phase MOSFET bridge plus drivers in a convenient isolated hermetic package. The hybrid is
capable of 29 amps of output current and 75 volts of DC bus voltage. It has a full line of protection features, including
undervoltage lockout protection of the bias voltage, cross conduction control and a user programmable dead-time control for
shoot-through elimination. In addition, the bridge may be shut down by using the Enable control. The MSK 4301 provides
good thermal conductivity for the MOSFETs due to the electrically isolated package design that allows direct heat sinking
of the device without insulators.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
3 Phase Brushless DC
Servo Control
Fin Actuator Control
Gimbal Control
3 Phase AC
Induction Motor Control
HVAC Blower Control
PIN-OUT INFORMATION
BH
1
BL
2
AL
3
AH
4
SWR
5
VBIAS
6
EN
7
CL
8
CH
9
GND
10
1
20
19
18
17
16
15
14
13
12
11
AØ
AØ
V+
V+
BØ
BØ
CØ
CØ
RSENSE
RSENSE
Rev. D 4/01
ABSOLUTE MAXIMUM RATINGS
V+
High Voltage Supply
VBIAS
Bias Supply
VIND
Logic Input Voltages
IOUT
Continuous Output Current
IPK
Peak Output Current
○○○○○○○○○○○○○○○○○○○○
○○○○○○○○○○○○○○○
○○○○
-0.3V to VBIAS +0.3V
○○○○○○○○○○○
○○○○○○○○○○○○○○○
ELECTRICAL SPECIFICATIONS
75V
16V
29A
41A
θJC
Thermal Resistance
TST
Storage Temperature Range
TLD
Lead Temperature Range
(10 Seconds)
TC
Case Operating Temperature
(4301H/E)
(4301)
TJ
Junction Temperature
○○○○○○○○○○○○○○○
○○○○○○○○○○○○○○○○
MMS
○○○○○○○○○○○○○○
-65°C to +150°C
○○○
○○○○○○○○○○
+300°C
-55°C to +125°C
-40°C to +85°C
○○○○○○○○○○○○
+150°C
1°C/W
Parameter
CONTROL SECTION
VBIAS Quiescent Current
VBIAS Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Resistance (Each FET)
Drain-Source On Resistance
(Each FET, For Thermal Calculations Only)
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
Turn-On Prop Delay (Lower)
Turn-Off Prop Delay (Lower)
Turn-On Prop Delay (Upper)
Turn-Off Prop Delay (Upper)
Dead Time
Dead Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
1
1
f=20KHz, 50% Duty Cycle
1
1
Test Conditions
All Inputs Off
VIN=0V
VIN=5V
ID=25µA, All Inputs Off
VDS=70V
ID=29A
V+=28V, RL=1Ω
ID=29A
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR =∞
SWR=12K
ISD=29A
ISD=29A, di/dt=100A/µS
GroupA 4
Subgroup
1,2,3
1,2,3
1
1
-
-
-
-
-
-
1
-
-
-
4
4
4
4
4
4
-
-
MSK4301H/E
60
-1
70
Typ.
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
6.6
7.1
100
120
81
0.5
0.5
5.0
1.0
1.05
120
Min.
5.75
6.2
2.7
3.0
0.3
3 2
Max.
8
25
7.5
8.0
0.8
-
-
-
-
-
-
5
5
-
135
+1
-
25
0.020
0.013
-
-
2
8
8
2
7.0
1.2
1.30
-
MSK4301
Min.
-
-
5.75
6.2
-
2.7
60
-1
70
-
-
--
-
-
-
-
-
-
3.0
0.3
-
-
Typ.
2.5
20
6.6
7.1
-
-
100
-
-
-
-
-
120
81
0.5
5
5
0.5
5.0
1.0
1.05
120
Max.
8
25
7.5
8.0
0.8
-
135
+1
-
25
0.020
0.013
-
-
3
10
10
3
7.0
1.2
1.30
-
Units
mAmp
mAmp
Volts
Volts
Volts
Volts
µAmp
µAmp
V
µAmp
Ω
Ω
nSec
nSec
µSec
µSec
µSec
µSec
µSec
µSec
Volts
nSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 T
2, 5 T
3, 6 T
A = TC = +25°C
A = TC = +125°C
A = TC = -55°C
2
Rev. D 4/01
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