MSK MSK4300D, MSK4300U, MSK4300S, MSK4300HU Datasheet
ISO 9001 CERTIFIED BY DSCC
10 AMP, 75V, 3 PHASE MOSFET
BRIDGE WITH INTELLIGENT
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088 (315) 701-6751
INTEGRATED GATE DRIVE
4300
FEATURES:
75 Volt Motor Supply Voltage
10 Amp Output Switch Capability, All N-Channel MOSFET Output Bridge
100% Duty Cycle High Side Conduction Capable
Suitable for PWM Applications from DC to 100KHz
Shoot-Through/Cross Conduction Protection
Undervoltage Lockout Protection
Programmable Dead-Time Control
Low Active Enable for Bridge Shutdown Control
Isolated Package Design for High Voltage Isolation Plus Good Thermal Transfer
Available with Three Lead Bend Options
MIL-PRF-38534 QUALIFIED
DESCRIPTION:
The MSK 4300 is a 3 phase MOSFET bridge plus drivers in a convenient isolated hermetic package. The hybrid is
capable of 10 amps of output current and 75 volts of DC bus voltage. It has a full line of protection features,
including undervoltage lockout protection of the bias voltage, cross conduction control and a user programmable
dead-time control for shoot-through elimination. In addition, the bridge may be shut down by using the EN (enable)
control. The MSK 4300 provides good thermal conductivity for the MOSFETs due to the electrically isolated package
design that allows direct heat sinking of the device without insulators.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
3 Phase Brushless DC
Servo Control
Fin Actuator Control
Gimbal Control
3 Phase AC
Induction Motor Control
HVAC Blower Control
1
Rev. C 6/00
ABSOLUTE MAXIMUM RATINGS
V+
High Voltage Supply
VBIAS
Bias Supply
VIND
Logic Input Voltages
IOUT
Continuous Output Current
IPK
Peak Output Current
○○○○○○○○○○○○○○○○○○○○
○○○○○○○○○○○○○○○
○○○○
○○○○○○○○○○○○○○○
ELECTRICAL SPECIFICATIONS
Parameter
CONTROL SECTION
VBIAS Quiescent Current
VBIAS Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Resistance (Each FET)
Drain-Source On Resistance
(Each FET, For Thermal Calculations Only)
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
Turn-On Prop Delay (Lower)
Turn-Off Prop Delay (Lower)
Turn-On Prop Delay (Upper)
Turn-Off Prop Delay (Upper)
Dead Time
Dead Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
1
1
1
1
1
1
1
1
1
1
1
75V
16V
-0.3V to VBIAS +0.3V
○○○○○○○○○○○
10A
25A
Test Conditions
All Inputs Off
f=20KHz, 50% Duty Cycle
VIN=0V
VIN=5V
ID=25µA, All Inputs Off
VDS=70V
ID=10A
V+=30V, RL=3Ω
ID=10A
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR =∞
SWR=12K
ISD=10A
ISD=10A, di/dt=100A/µS
θJC
TST
TLD
TC
TJ
GroupA 4
Subgroup
1,2,3
1,2,3
1
1
-
-
-
-
-
-
1
-
-
-
4
4
4
4
4
4
-
-
Thermal Resistance
○○○○○○○○○○○○○○
Storage Temperature Range
Lead Temperature Range
○○○○○○○○○○
(10 Seconds)
Case Operating Temperature
Junction Temperature
MSK 4300H
Min.
5.75
6.2
2.7
60
70
6.0
0.3
Typ.
2.5
12.5
6.6
7.1
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
-
-
-
5
6
0.5
5
5
0.5
7.0
0.5
1.05
75
○○○○○○○○○○○○
3
Max.
7.5
8.0
0.8
135
+1
0.300
0.16
8.0
0.7
1.25
15
25
Min.
8
5.75
6.2
-
-
2.7
60
-1
-
70
-
-
--
-
-
2
8
8
2
-
-
-
-
-
-
-
6.0
0.3
-
-
-65°C to +150°C
○○○
○○
-55°C to +125°C
MSK 4300
Typ.
2.5
12.5
6.6
7.1
100
0.5
0.5
7.0
0.5
1.05
75
2
Max.
8
15
7.5
8.0
-
0.8
-
-
-
-
-
-
5
6
5
5
-
135
+1
-
25
0.300
0.16
-
-
3
10
10
3
8.0
0.7
1.25
-
9°C/W
+300°C
+150°C
Units
mAmp
mAmp
Volts
Volts
Volts
Volts
µAmp
µAmp
V
µAmp
Ω
Ω
nSec
nSec
µSec
µSec
µSec
µSec
µSec
µSec
Volts
nSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 T
2, 5 T
3, 6 T
A = TC = +25°C
A = TC = +125°C
A = TC = -55°C
2
Rev. C 6/00
Loading...