MSK MSK3020 Datasheet
H-BRIDGE
ISO 9001 CERTIFIED BY DSCC
M.S. KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088 (315) 701-6751
FEATURES:
• Pin Compatible with MPM3002 and MPM3012
• P and N Channel MOSFETs for Ease of Drive
• N Channel Current Sensing MOSFET for Lossless Sensing
• Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
• Avalanche Rated Devices
• 100 Volt, 10 Amp Full H-Bridge
DESCRIPTION:
The MSK 3020 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3020 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom
transistors. The N Channel MOSFETS are current sensing to allow lossless current sensing for current controlled
applications. The MSK 3020 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high
performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3020 is pin
compatible with the MPM3002 and MPM3012 with some differences in specifications.
EQUIVALENT SCHEMATIC
MOSFET POWER MODULE
3020
TYPICAL APPLICATIONS
• Stepper Motor Servo Control
• Disk Drive Head Control
• X-Y Table Control
• Az-El Antenna Control
PIN-OUT INFORMATION
1 Gate Q1 7 Source 2, 3
2 Source Q1 8 Sense Q3
3 Drain 1, 2 9 Gate Q3
4 Gate Q2 10 Drain 3, 4
5 Sense Q2 11 Gate Q4
6 Kelvin Source 2, 3 12 Source 4
1
Rev. A 7/00
ABSOLUTE MAXIMUM RATINGS
VDSS Drain to Source Voltage ........... 100V MAX
VDGDR Drain to Gate Voltage
(RGS = 1 MW)........................ 100V MAX
VGS Gate to Source Voltage
(Continuous) ........................... ±20V MAX
ID Continuous Current .................... 10A MAX
IDM Pulsed Current ........................... 25A MAX
RTH-JC Thermal Resistance
(Junction to Case) ......................... 4.0°C/W
IM Sense Current - Continuous ...... 13 mA
Single Pulse Avalanche Energy
(Q1, Q4) ........................................................ 7.9 mJ
(Q2, Q3) ......................................................... 69 mJ
TJ Junction Temperature ............................+175°C MAX
TST Storage Temperature ........................ -55°C to
+150°C
TC Case Operating Temperature Range .... -55°C to
+125°C
TLD Lead Temperature Range
(10 Seconds) ........................................... 300°C MAX
MAX
IMM Sense Current Peak ................. 33 mA
ELECTRICAL SPECIFICATIONS
MAX
Parameter Test Conditions 4
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source on Resistance 2
Drain-Source on Resistance 3
Forward Transconductance 1
VGS = 0 ID = 0.25 mA (All Transistors)
GS = 0 VDS = 100V, (Q2, Q3)
V
VDS = 100V VGS = 0V, (Q2, Q3)
DS = -100V VGS = 0V, (Q1, Q4)
V
V
GS = ±20V VDS = 0V (All Transistors)
VDS = VGS ID = 250 µA (Q2, Q3)
V
DS = VGS ID = 250 µA (Q1, Q4)
VGS = 10V ID = 8.4A (Q2, Q3)
V
GS = -10V ID = -8.4A (Q1, Q4)
VGS = 10V ID = 8.4A (Q2, Q3)
V
GS = -10V ID = -8.4A (Q1, Q4)
VDS = 50V ID = 8.4A (Q2, Q3)
V
DS = -50V ID = -8.4A (Q1, Q4)
Min.
100
100
-
-
-
2.0
-2.0
-
-
-
-
4.7
3.2
MSK 3020
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
25
-25
±100
4.0
-4.0
0.26
0.31
0.16
0.20
-
-
Units
V
V
µA
µA
nA
V
V
W
W
W
W
S
S
N-CHANNEL (Q2, Q3)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time 1
Turn-Off Delay Time 1
Fall Time 1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
ID = 14A
DS = 80V
V
VGS = 10V
DD = 50V
V
D = 14A
I
G = 12W
R
RD = 3.5W
VGS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V ID = 14A
-
-
-
-
-
-
-
-
-
-
-
1390
-
-
-
9.5
42
22
25
700
320
83
9
-
26
5.5
11
-
-
-
-
-
-
-
-
1540
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
P-CHANNEL (Q1, Q4)
Total Gate Charge 1
Gate-Source Charge 1
Gate-Drain Charge 1
Turn-On Delay Time 1
Rise Time 1
Turn-Off Delay Time 1
Fall Time 1
Input Capacitance 1
Output Capacitance 1
Reverse Transfer Capacitance 1
D = -8.4A
VDS = -80V
VGS = -10V
DD = -50V
V
ID = -8.4A
R
G = 9.1W
RD = 6.2W
GS = 0V
V
VDS = -25V
f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
15
58
45
46
760
260
170
58
8.3
32
-
-
-
-
-
-
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
I
BODY DIODE
Forward on Voltage 1
Reverse Recovery Time 1
Reverse Recovery Charge 1
I
S = 14A VGS = 0V (Q2, Q3)
IS = -14A VGS = 0V (Q1, Q4)
I
S = 14A di/dt = 100A/µS (Q2, Q3)
IS = -8.4A di/dt = 100A/µS (Q1, Q4)
I
S = 14A di/dt = 100A/µS (Q2, Q3)
I
S = -8.4A di/dt = 100A/µS (Q1, Q4)
-
-
-
-
-
-
2.5
-1.6
150
47
0.85
650
-
-
310
71
1.2
970
V
V
nS
nS
µC
nC
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance
but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4TA = 25°C unless otherwise specified.
2
Rev. A 7/00
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