MSK MSK3018 Datasheet

ISO-9001 CERTIFIED BY DSCC

THREE PHASE BRIDGE

MOSFET POWER MODULE

3018

M.S.KENNEDY CORP.

4707 Dey Road Liverpool, N.Y. 13088 [phone]

FEATURES:

Designed for Higher Current, Bottom Side Braking

Pin Compatible with MPM3003

P and N Channel MOSFETs for Ease of Drive

Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Avalanche Rated Devices

Interfaces Directly with Most Brushless Motor Drive IC's

55 Volt, 10 Amp P-Channel, 30 Amp N-Channel

DESCRIPTION:

The MSK 3018 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab power SIP

package. Consisting of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transis-

tors, the MSK 3018 will interface directly with most brushless motor drive IC's without special gate driving require-

ments. The MSK 3018 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high perfor-

mance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3018 is a replacement

for the MPM3003 with higher current capability when turning on all the N-Channel FETs for braking.

EQUIVALENT SCHEMATIC

TYPICAL APPLICATIONS

Three Phase Brushless DC Motor Servo Control

Disk Drive Spindle Control

Fin Actuator Control

Az-El Antenna Control

PIN-OUT INFORMATION

Source 2,4,6

1

Gate 2

2

Gate 1

3

Drain 1,2

4

Gate 4

5

Drain 3,4

6

1 Rev. A 7/00

Source 1,3,5

12

Source 1,3,5

11

Gate 5

10

Drain 5,6

9

Gate 6

8

Gate 3

7

ABSOLUTE MAXIMUM RATINGS

VDSS

VDGDR

VGS

ID

IDM

RTH-JC

Drain to Source Voltage

○○○○○○○○○○○

Drain to Gate Voltage

(RGS=1MΩ)

○○○○○○○○○○○○○○○○○

Gate to Source Voltage (Continuous)

Continuous Current (N-Channel)

(P-Channel)

Pulsed Current (N-Channel)

(P-Channel)

○○○○○○○○○

○○○○○○○○○

Thermal Resistance (Junction to Case)

(N-Channel FETs)

(P-Channel FETs)

○○○○○○○○○○○○○○○○

○○○○○○○○○○○○○○○○

ELECTRICAL SPECIFICATIONS

○○○

±20V MAX

○○○○○○

○○○○○○○

55V MAX

55V MAX

30A MAX

14A MAX

40A MAX

20A MAX

2°C/W

6°C/W

Single Pulse Avalanche Energy

(Q2,Q4,Q6)

(Q1,Q3,Q5)

Junction Temperature

TJ

Storage Temperature

TST

Case Operating Temperature Range

TC

Lead Temperature Range

TLD

(10 Seconds)

○○○○○○○○○○○○○○○○○○○

○○○○○○○○○○○○○○○○○○○

○○○○○○○○○○

○○○○○○○○

○○○○○○○○○○○○○○○

570mJ

180mJ

+175°C MAX

-55°C to +150°C

-55°C to +125°C

300°C MAX

Parameter

Test Conditions

4

Min.

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate-Source Threshold Voltage

2

Drain-Source On Resistance

Drain-Source On Resistance

Forward Transconductance

N-Channel (Q2,Q4,Q6)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

P-CHANNEL (Q1,Q3,Q5)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

BODY DIODE

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge

NOTES:

This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.

1

Resistance as seen at package pins.

2

Resistance for die only; use for thermal calculations.

3

TA=25°C unless otherwise specified.

4

Test limits due to autotest fixturing constraints.

5

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

5

3

1

1

1

1

1

VGS=0 ID=0.25mA (All Transistors)

DS=55V VGS=0V (Q2,Q4,Q6)

V

DS=-55V VGS=0V (Q1,Q3,Q5)

V

GS=±20V VDS=0 (All Transistors)

V

DS=VGS ID=250µA (Q2,Q4,Q6)

V

DS=VGS ID=250µA (Q1,Q3,Q5)

V

GS=10V ID=10A (Q2,Q4,Q6)

V

GS=-10V ID=-10A (Q1,Q3,Q5)

V

GS=10V ID=10A (Q2,Q4,Q6)

V

GS=10V ID=-10A (Q1,Q3,Q5)

V

DS=25V ID=10A (Q2,Q4,Q6)

V

DS=-25V ID=-10A (Q1,Q3,Q5)

V

D=30A

I

DS=44V

V

GS=10V

V

DD=28V

V

D=30A

I

G=2.5Ω

R

D=0.93Ω

R

GS=0V

V

DS=25V

V

f=1MHz

D=-10A

I

DS=-44V

V

GS=-10V

V

DD=-28V

V

D=-10A

I

G=13Ω

R

D=2.6Ω

R

GS=0V

V

DS=-25V

V

f=1MHz

S=30A VGS=0V (Q2,Q4,Q6)

I

S=-10A VGS=0V (Q1,Q3,Q5)

I

S=30A di/dt=100A/µS (Q2,Q4,Q6)

I

S=-10A di/dt=100A/µS (Q1,Q3,Q5)

I

S=30A di/dt=100A/µS (Q2,Q4,Q6)

I

S=-10A di/dt=100A/µS (Q1,Q3,Q5)

I

2

55

-

-

-

2.0

-2.0

-

-

-

-

30

4.2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MSK3018

Typ.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14

62

47

58

3400

830

240

-

-

-

13

55

130

41

620

280

140

1.3

-1.6

120

54

510

110

Max.

-

25

-25

±100

4.5

-4.5

0.04

0.16

0.013

0.10

-

-

150

24

55

-

-

-

-

-

-

-

35

7.9

16

-

-

-

-

-

-

-

-

-

190

82

760

160

Rev. A 7/00

Units

V

µA

µA

nA

V

V

Ω
Ω
Ω
Ω

S

S

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

V

V

nS

nS

nC

nC