MSK MSK3017 Datasheet

ISO-9001 CERTIFIED BY DSCC

THREE PHASE BRIDGE

MOSFET POWER MODULE

3017

M.S.KENNEDY CORP.

4707 Dey Road Liverpool, N.Y. 13088 [phone]

FEATURES:

All N-Channel Mosfets

Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Avalanche Rated Devices

Interfaces with Most Brushless Motor Drive IC's

200 Volt, 30 Amp Full Three Phase Bridge at 25°C

DESCRIPTION:

The MSK 3017 is an all N-Channel three phase power MOSFET Bridge Circuit. Packaged in a space efficient isolated

ceramic tab power SIP that allows for direct heat sinking, the MSK 3017 can be interfaced with a wide array of brushless

motor drive IC's. The MSK 3017 uses M.S Kennedy's proven power hybrid technology to produce a cost effective high

performance circuit for use in today's sophisticated servo motor and disk drive systems.

EQUIVALENT SCHEMATIC

TYPICAL APPLICATIONS

Three Phase Brushless DC Motor Servo Control

Disk Drive Spindle Control

Fin Actuator Control

Az-El Antenna Control

PIN-OUT INFORMATION

1

Drain Q2, Q4, Q6

2

Drain Q2, Q4, Q6

3

Drain Q2, Q4, Q6

4

Gate Q2

5

Gate Q1

6

Drain Q1, Source Q2

7

Drain Q1, Source Q2

8

Drain Q1, Source Q2

9

Gate Q4

10

Gate Q3

11

Drain Q3, Source Q4

1 Rev. - 8/01

Drain Q3,Source Q4

12

Drain Q3, Source Q4

13

Source Q1, Q3, Q5

14

Source Q1, Q3, Q5

15

Source Q1, Q3, Q5

16

Gate Q6

17

Drain Q5, Source Q6

18

Drain Q5, Source Q6

19

Drain Q5, Source Q6

20

Gate Q5

21

ABSOLUTE MAXIMUM RATINGS

VDSS

VDGDR

VGS

ID

IDM

RTH-JC

Drain to Source Voltage

Drain to Gate Voltage

(RGS=1MΩ)

○○○○○○○○○○○

Gate to Source Voltage

(Continuous)

Continuous Current

Pulsed Current

○○○○○○○○○○

○○○○○○○

○○○○○○○○○○

Thermal Resistance

(Junction to Case)@25°C

RTH-JC

Thermal Resistance

(Junction to Case)@125°C

ELECTRICAL SPECIFICATIONS

Parameter

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate-Source Threshold Voltage

Drain-Source On Resistance

Drain-Source On Resistance

Forward Transconductance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Body Diode

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge

1

1

1

2

3

1

1

1

1

1

1

1

1

1

1

1

○○○○

±20V MAX

○○○○○

○○○○

200V MAX

200V MAX

30A MAX

46A MAX

1.0°C/W

1.6°C/W

Test Conditions

VGS=0 ID=0.25mA

DS=200V VGS=0V

V

GS=±20V VDS=0

V

DS=VGS ID=250µA

V

GS=10V ID = 30A

V

GS=10V ID=30A

V

DS=50V ID=30A

V

D = 30A

I

DS=160V

V

GS = 10V

V

DD=100V

V

D = 30A

I

G = 4.3Ω

R

RD = 2.1Ω

VGS=0V

DS=25V

V

f=1MHz

S=30 A VGS=0V

I

S=30 A di/dt=100A/µS

I

Single Pulse Avalanche Energy

Junction Temperature

TJ

Storage Temperature

TST

Case Operating Temperature Range

TC

Lead Temperature Range

TLD

(10 Seconds)

4

○○○○○○○○○○○○○○○○○

○○○○○○○○○○○○

○○○○○○○○○

MSK3017

Min.

200

-

-

2.0

-

-

24

-

-

-

-

-

-

-

-

-

-

-

-

-

○○○○○○○○○

-55°C to +150°C

-55°C to +125°C

Typ.

-

-

-

-

-

-

-

-

-

-

23

120

100

94

5200

1200

310

1.8

390

4.8

Max.

250

±100

0.09

0.06

230

110

590

1000 mJ

+150°C MAX

300°C MAX

Units

-

4.0

-

42

-

-

-

-

-

-

-

-

7.2

V

µA

nA

V

Ω
Ω

S

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

V

nS

µC

NOTES:

1

This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.

2

Resistance as seen at package pins.

3

Resistance for die only; use for thermal calculations.

4

TA=25°C unless otherwise specified.

2 Rev. - 8/01