MSK MSK3014 Datasheet
H-BRIDGE
ISO-9001 CERTIFIED BY DSCC
MOSFET POWER MODULE
3014
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088 (315) 701-6751
FEATURES:
P and N Channel MOSFETs for Ease of Drive
100 Volt, 10 Amp Full H-Bridge
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
Avalanche Rated Devices
DESCRIPTION:
The MSK 3014 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3014 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom
transistors. The MSK 3014 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high
perfomance circuit for use in today's sophisticated servo motor and disk drive systems.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
Stepper Motor Servo Control
Disk Drive Head Control
X-Y Table Control
Az-El Antenna Control
PIN-OUT INFORMATION
Gate Q1
1
Source Q1
2
Drain 1,2
3
Gate Q2
4
N/C
5
N/C
6
1
Source 4
12
Gate Q4
11
Drain 3,4
10
Gate Q3
9
N/C
8
Source 2,3
7
Rev. B 7/00
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
○○○○○○○○○○○
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
○○○○○○○○○○
○○○○○○○○
○○○○○○○○○○
Thermal Resistance
(Junction to Case)
○○○○○○○○○
○○○○
100V MAX
100V MAX
±20V MAX
10A MAX
25A MAX
7.9°C/W
Single Pulse Avalanche Energy
(Q2,Q4,Q6)
(Q1,Q3,Q5)
Junction Temperature
TJ
Storage Temperature
TST
Case Operating Temperature Range
TC
Lead Temperature Range
TLD
(10 Seconds)
○○○○○○○○○○○○○○○○○○○○○
○○○○○○○○○○○○○○○○○○○○○
○○○○○○○○○○
○○○○○○○○
○○○○○○○○○○○○○○○○○
+175°C MAX
-55°C to +150°C
-55°C to +125°C
300°C MAX
ELECTRICAL SPECIFICATIONS
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
N-Channel (Q2,Q3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
1
1
1
1
1
1
2
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Test Conditions
4
Min.
VGS=0 ID=0.25mA (All Transistors)
DS=100V VGS=0V (Q2,Q3)
V
DS=-100V VGS=0V (Q1,Q4)
V
GS=±20V VDS=0 (All Transistors)
V
DS=VGS ID=250µA (Q2,Q3)
V
DS=VGS ID=250µA (Q1,Q4)
V
GS=10V ID=9.0A (Q2,Q3)
V
GS=-10V ID=-8.4A (Q1,Q4)
V
GS=10V ID=9.0A (Q2,Q3)
V
GS=10V ID=-8.4A (Q1,Q4)
V
DS=50V ID=9.0A (Q2,Q3)
V
DS=-50V ID=-8.4A (Q1,Q4)
V
D=9.0A
I
DS=80V
V
GS=10V
V
DD=50V
V
D=9.0A
I
G=12Ω
R
D=5.5Ω
R
GS=0V
V
DS=25V
V
1
1
S=9.0A di/dt=100A/µS (Q2,Q3)
I
S=-8.4A di/dt=100A/µS (Q1,Q4)
I
S=9.0A di/dt=100A/µS (Q2,Q3)
I
S=-8.4A di/dt=100A/µS (Q1,Q4)
I
f=1.0MHz
D=-8.4A
I
DS=-80V
V
GS=-10V
V
DD=-50V
V
D=-8.4A
I
G=9.1Ω
R
D=6.2Ω
R
GS=0V
V
DS=-25V
V
f=1.0MHz
S=9.0A VGS=0V (Q2,Q3)
I
S=-8.4A VGS=0V (Q1,Q4)
I
100
-
-
-
2.0
2.0
-
-
-
-
6.4
3.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MSK3014
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.4
27
37
25
640
160
88
-
-
-
15
58
45
46
760
260
170
1.3
-1.6
130
130
650
650
Max.
-
25
-25
±100
4.0
4.0
0.20
0.28
0.11
0.20
-
-
44
6.2
21
-
-
-
-
-
-
-
58
8.3
32
-
-
-
-
-
-
-
-
-
190
190
970
970
NOTES:
1
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
2
Resistance as seen at package pins.
3
Resistance for die only; use for thermal calculations.
4
TA=25°C unless otherwise specified.
2
Rev. B 7/00
7.9mJ
7.9mJ
Units
V
µA
µA
nA
V
V
Ω
Ω
Ω
Ω
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
µC
µC
Loading...