MSK MSK3013 Datasheet

ISO-9001 CERTIFIED BY DSCC

QUAD N-CHANNEL

MOSFET POWER MODULE

M.S.KENNEDY CORP.

4707 Dey Road Liverpool, N.Y. 13088

FEATURES:

• Pin Compatible with MPM3013

• QUAD Independent N - Channel MOSFETS

• Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

• Avalanche Rated Devices

• 55 Volt, 25 Amp Rated

• Low RDS (ON) - 0.022Ω For Each Die

DESCRIPTION:

The MSK 3013 is a QUAD N-Channel power circuit packaged in a space efficient isolated ceramic tab power SIP

package. The MSK 3013 consists of four totally isolated N-Channel MOSFETs. The MSK 3013 uses M.S.Kennedy's

proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated

servo motor and disk drive systems. The MSK 3013 is a replacement for the MPM3013 with only minor differences

in specifications.

EQUIVALENT SCHEMATIC

3013

[phone]

TYPICAL APPLICATIONS

• Stepper Motor Servo Control

• Disk Drive Head Control

• X-Y Table Control

• Az-El Antenna Control

• Various Switching Applications

PIN-OUT INFORMATION

1 Q1 Gate 7 Q3 Gate

2 Q1 Source 8 Q3 Source

3 Q1 Drain 9 Q3 Drain

4 Q2 Gate 10 Q4 Gate

5 Q2 Source 11 Q4 Drain

6 Q2 Drain 12 Q4 Source

1

Rev. B 7/00

ABSOLUTE MAXIMUM RATINGS

VDSS Drain to Source Voltage . . .55V MAX

VDGDR Drain to Gate Voltage

(RGS=1MΩ)......... 55V MAX

VGS Gate to Source Voltage

(Continuous)........ ±20V MAX

TJ Junction Temperature. . . ........+175°C MAX

TST Storage Temperature. . . ......-55°C TO +150°C

TC Case Operating Temperature Range . .-55°C TO 125°C

TLD Lead Temperature Range

(10 Seconds) . . . . . . ..........300°C MAX

ID Continuous Current ..... 25A MAX

IDM Pulsed Current ....... 49A MAX

RTH-JC Thermal Resistance

(Junction to Case)...... 0.3°C/W

ELECTRICAL SPECIFICATIONS

Parameter

Drain-Source Breakdown Voltage VGS = 0 ID = 0.25 mA 55 - - V

Drain-Source Leakage Current VDS = 55V VGS = 0V - - 25 µA
Gate-Source Leakage Current VGS = ±20V VDS = 0 - - ±100 nA

Gate-Source Threshold Voltage VDS = VGS ID = 250 µA 2 - 4 V

Drain-Source on Resistance 2 VGS = 10V ID = 25A - 0.033 0.040

Drain-Source on Resistance 3 VGS = 10V ID = 25A - - 0.022

Test Conditions 4

Min. Typ. Max.

MSK 3013

Units

Ω

Ω

Forward Transconductance 1 VDS = 25V ID = 25A 17 - - S
Total Gate Charge 1 ID = 25A - - 65 nC
Gate-Source Charge 1 VDS = 28V - - 12 nC
Gate-Drain Charge 1 VGS = 10V - - 27 nC
Turn-On Delay Time 1 VDD = 28V - 7.3 - nS
Rise Time 1 ID = 25A - 69 - nS
Turn-Off Delay Time 1 RG = 12 - 47 - nS
Fall Time 1 RD = 1.1 - 60 - nS
Input Capacitance 1 VGS = 0V - 1300 - pF
Output Capacitance 1 VDS = 25V - 410 - pF

Reverse Transfer Capacitance 1 f = 1 MHz - 150 - pF

BODY DIODE

Forward on Voltage 1 IS = 25A VGS = 0V - 1.3 1.75 V
Reverse Recovery Time 1 IS = 25A di/dt = 100A/µS - 65 98 nS

Ω

Reverse Recovery Charge 1 IS = 25A di/dt = 100A/µS - 160 240 µC

NOTES:

1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of

actual

device performance but are for reference only.

2 Resistance as seen at package pins.

3 Resistance for die only; use for thermal calculations.

4TA=25°C unless otherwise specified. Parameters apply to each transistor in the module.

2

Rev. B 7/00