MSK MSK3002 Datasheet

H-BRIDGE

ISO 9001 CERTIFIED BY DSCC

M.S. KENNEDY CORP.

4707 Dey Road Liverpool, N.Y. 13088 [phone]

FEATURES:

• Pin Compatible with MPM3002 and MPM3010

• P and N Channel MOSFETs for Ease of Drive

• N Channel Current Sensing MOSFET for Low Loss Sensing

• Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

• Avalanche Rated Devices

• 55 Volt, 10 Amp Full H-Bridge

DESCRIPTION:

The MSK 3002 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.

The MSK 3002 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom

transistors. The N Channel MOSFETS are current sensing to allow for low loss current sensing for current controlled

applications. The MSK 3002 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high

performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3002 is pin

compatible with the MPM3002 and MPM3010 with some differences in specifications.

EQUIVALENT SCHEMATIC

MOSFET POWER MODULE

3002

TYPICAL APPLICATIONS

• Stepper Motor Servo Control

• Disk Drive Head Control

• X-Y Table Control

• Az-El Antenna Control

1

Rev. C 7/00

ABSOLUTE MAXIMUM RATINGS

VDSS Drain to Source Voltage 55V MAX

○○○○○○

VDGDR Drain to Gate Voltage

(RGS = 1 MΩ) 55V MAX

○○○○○○○○○○○

VGS Gate to Source Voltage

(Continuous) ±20V MAX

ID Continuous Current 10A MAX

IDM Pulsed Current 25A MAX

○○○○○○○○○○○

○○○○○○○○

○○○○○○○○○○○

RTH-JC Thermal Resistance

(Junction to Case) 7.9°C/W

IM Sense Current - Continuou 13 mA MAX

IMM Sense Current Peak 33 mA MAX

○○○○○○○○○

○○

○○○○○○

Single Pulse Avalanche Energy

(Q1,Q4) 6.0J

(Q2,Q3) 71 mJ

TJ JunctionTemperature +175°CMAX

TST Storage Temperature -55°C to +150°C

TC Case Operating Temperature Range -55°C to +125°C

○○○○○○○○○○○○○○○○○○○○○○○○○○

○○○○○○○○○○○○○○○○○○○○○○○○○

○○○○○○○○○○○○

○○○○○○○○○○○○

○○○

TLD Lead Temperature Range

(10Seconds) 300°C MAX

○○○○○○○○○○○○○○○○○○○

ELECTRICAL SPECIFICATIONS

Parameter Test Conditions 4

Drain-Source Breakdown Voltage

Drain-Mirror Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate-Source Threshold Voltage

Drain-Source on Resistance 2

Drain-Source on Resistance 3

Forward Transconductance 1

N-CHANNEL (Q2, Q3)

Total Gate Charge 1

Gate-Source Charge 1

Gate-Drain Charge 1

Turn-On Delay Time 1

Rise Time 1

Turn-Off Delay Time 1

Fall Time 1

Input Capacitance 1

Output Capacitance 1

Reverse Transfer Capacitance 1

Output Capacitance of Sensing Cells 1

Current Sensing Ratio 1

P-CHANNEL (Q1, Q4)

Total Gate Charge 1

Gate-Source Charge 1

Gate-Drain Charge 1

Turn-On Delay Time 1

Rise Time 1

Turn-Off Delay Time 1

Fall Time 1

Input Capacitance 1

Output Capacitance 1

Reverse Transfer Capacitance 1

BODY DIODE

Forward on Voltage 1

Reverse Recovery Time 1

Reverse Recovery Charge 1

VGS = 0 ID = 0.25 mA (All Transistors)

GS = 0 VDS = 55V, (Q2, Q3)

V

VDS = 55V VGS = 0V, (Q2, Q3)

DS = -55V VGS = 0V, (Q1, Q4)

V

VGS = ±20V VDS = 0V (All Transistors)

V

DS = VGS ID = 250 µA (Q2, Q3)

VDS = VGS ID = 250 µA (Q1, Q4)

V

GS = 10V ID = 10A (Q2, Q3)

VGS = -10V ID = -7.2A (Q1, Q4)

V

GS = 10V ID = 10A (Q2, Q3)

VGS = -10V ID = -7.2A (Q1, Q4)

V

DS = 25V ID = 10A (Q2, Q3)

VDS = -25V ID = -7.2A (Q1, Q4)

I

D = 17A

DS = 48V

V

VGS = 10V

VDD = 30V

ID = 17A

G = 18Ω

R

D = 1.7Ω

R

V

GS = 0V

V

DS = 25V

f = 1 MHz

I

D = 17A

ID = -7.2A

VDS = -44V

VGS = -10V

V

DD = -28V

ID = -7.2A

R

G = 24Ω

RD = 3.7Ω

GS = 0V

V

VDS = -25V

f = 1 MHz

S = 17A VGS = 0V (Q2, Q3)

I

I

S = -7.2A VGS = 0V (Q1, Q4)

IS = 17A di/dt = 100A/µS (Q2, Q3)

IS = -7.2A di/dt = 100A/µS (Q1, Q4)

I

S = 17A di/dt = 100A/µS (Q2, Q3)

I

S = -7.2A di/dt = 100A/µS (Q1, Q4)

-2.0

740

NOTES:

1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but

are for reference only.

2 Resistance as seen at package pins.

3 Resistance for die only; use for thermal calculations.

4TA = 25°C unless otherwise specified.

2

Min.

55

55

-

-

-

2.0

-

-

-

-

5.8

2.5

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MSK 3002

Typ.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

12

59

25

38

720

360

75

14

-

-

-

-

13

55

23

37

350

170

92

1.5

-1.6

87

47

0.29

0.084

Max.

-

-

25

-25

±100

4.5

-4.5

0.20

0.28

0.10

0.175

-

-

24

6.3

9

-

-

-

-

-

-

-

-

820

19

5.1

10

-

-

-

-

-

-

-

-

-

180

71

0.60

0.13

Rev. C 7/00

Units

V

V

µA

µA

nA

V

V

Ω
Ω
Ω
Ω

S

S

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

pF

r

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

V

V

nS

nS

µC

µC