MSK MSK3001 Datasheet

ISO-9001 CERTIFIED BY DSCC

THREE PHASE BRIDGE

MOSFET POWER MODULE

3001

M.S.KENNEDY CORP.

4707 Dey Road Liverpool, N.Y. 13088 [phone]

FEATURES:

Pin Compatible with IRFT001

P and N Channel MOSFETs for Ease of Drive

Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Avalanche Rated Devices

Interfaces Directly with Most Brushless Motor Drive IC's

100 Volt, 5 Amp Full Three Phase Bridge at 25°C

DESCRIPTION:

The MSK 3001 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab power SIP

package. Consisting of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transis-

tors, the MSK 3001 will interface directly with most brushless motor drive IC's without special gate driving require-

ments. The MSK 3001 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high perfor-

mance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3001 is a replacement

for the IRFT001 with only minor differences in mechanical and electrical specifications.

EQUIVALENT SCHEMATIC

TYPICAL APPLICATIONS

Three Phase Brushless DC Motor Servo Control

Disk Drive Spindle Control

Fin Actuator Control

Az-El Antenna Control

PIN-OUT INFORMATION

Source 1,3,5

1

Gate 1

2

Gate 2

3

Drain 1,2

4

Gate 3

5

Drain 3,4

6

1 Rev. B 7/00

Source 2,4,6

11

Gate 6

10

Drain 5,6

9

Gate 5

8

Gate 4

7

ABSOLUTE MAXIMUM RATINGS

VDSS

VDGDR

VGS

ID

IDM

RTH-JC

Drain to Source Voltage

Drain to Gate Voltage

(RGS=1MΩ)

○○○○○○○○○○○○

Gate to Source Voltage

(Continuous)

Continuous Current

Pulsed Current

○○○○○○○○○○

○○○○○○○

○○○○○○○○○○

Thermal Resistance

(Junction to Case)

○○○○○○○○○○

○○○○

100V MAX

100V MAX

±20V MAX

5.6A MAX

22A MAX

6°C/W

Single Pulse Avalanche Energy

(Q1,Q3,Q5)

(Q2,Q4,Q6)

Junction Temperature

TJ

Storage Temperature

TST

Case Operating Temperature Range

TC

Lead Temperature Range

TLD

(10 Seconds)

○○○○○○○○○○○○○○○○○○○○○○

○○○○○○○○○○○○○○○○○○○○○

○○○○○○○○○○

○○○○○○○○

○○○○○○○○○○○○○○○○○

+175°C MAX

-55°C to +150°C

-55°C to +125°C

300°C MAX

ELECTRICAL SPECIFICATIONS

Parameter

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Gate-Source Threshold Voltage

Drain-Source On Resistance

Drain-Source On Resistance

Forward Transconductance

N-Channel (Q1,Q3,Q5)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

P-CHANNEL (Q2,Q4,Q6)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

BODY DIODE

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge

1

1

1

1

1

1

1

2

3

1

1

1

1

1

1

1

1

1

1

1

1

1

1

1

Test Conditions

4

Min.

VGS=0 ID=0.25mA (All Transistors)

DS=100V VGS=0V (Q1,Q3,Q5)

V

DS=-100V VGS=0V (Q2,Q4,Q6)

V

GS=±20V VDS=0 (All Transistors)

V

DS=VGS ID=250µA (Q1,Q3,Q5)

V

DS=VGS ID=250µA (Q2,Q4,Q6)

V

GS=10V ID=5.6A (Q1,Q3,Q5)

V

GS=-10V ID=-3.4A (Q2,Q4,Q6)

V

GS=10V ID=5.6A (Q1,Q3,Q5)

V

GS=10V ID=-3.4A (Q2,Q4,Q6)

V

DS=25V ID=5.7A (Q1,Q3,Q5)

V

DS=-50V ID=-3.4A (Q2,Q4,Q6)

V

D=5.7A

I

DS=80V

V

GS=10V

V

DD=50V

V

D=5.7A

I

G=22Ω

R

D=8.6Ω

R

GS=0V

V

DS=25V

V

1

1

S=5.5A VGS=0V (Q1,Q3,Q5)

I

S=-5.6A VGS=0V (Q2,Q4,Q6)

I

S=5.7A di/dt=100A/µS (Q1,Q3,Q5)

I

S=-6.8A di/dt=100A/µS (Q2,Q4,Q6)

I

S=5.7A di/dt=100A/µS (Q1,Q3,Q5)

I

S=-6.8A di/dt=100A/µS (Q2,Q4,Q6)

I

f=1MHz

D=-6.8A

I

DS=-80V

V

GS=-10V

V

DD=-50V

V

D=-6.8A

I

G=18Ω

R

D=7.1Ω

R

GS=0V

V

DS=-25V

V

f=1MHz

100

-

-

-

2.0

-2.0

-

-

-

-

2.7

1.5

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MSK3001

Typ.

-

-

-

-

-

-

0.18

0.37

-

-

-

-

-

-

-

4.5

23

32

23

330

92

54

-

-

-

9.6

29

21

25

390

170

45

1.3

-1.6

99

100

0.39

0.33

Max.

-

25

-100

±100

4.0

-4.0

0.30

0.75

0.21

0.60

-

-

25

4.8

11

-

-

-

-

-

-

-

18

3.0

9.0

-

-

-

-

-

-

-

-

-

150

200

0.58

0.66

NOTES:

1

This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.

2

Resistance as seen at package pins.

3

Resistance for die only; use for thermal calculations.

4

TA=25°C unless otherwise specified.

2 Rev. B 7/00

91mJ

210mJ

Units

V

µA

µA

nA

V

V

Ω
Ω
Ω
Ω

S

S

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

nC

nC

nC

nS

nS

nS

nS

pF

pF

pF

V

V

nS

nS

µC

µC