Motorola VN2406L Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by VN2406L/D
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current I
Pulsed Drain Current I
Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature TJ, T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering
Purposes, 1/16″ from case for 10
seconds
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
STATIC CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
Zero Gate Voltage Drain Current
(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125°C)
Gate– Body Leakage
(VDS = 0, VGS = ±15 V)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current
(VGS = 10 V, VDS ≥ 2.0 V
Drain–Source On Resistance
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
Forward Transconductance
(VDS = 10 V, ID = 0.5 A)
1. Pulse Test; Pulse Width < 300 µs, Duty Cycle v 2.0%.
(1)
DS(on)
(1)
(1)
)
DSS
DGR
V
GS
V
GSM
D
DM
P
D
stg
θJA
T
L
= 25°C unless otherwise noted)
A
3 DRAIN
2
GATE
1 SOURCE
240 Vdc
60 Vdc
± 20
± 40
200 mAdc
500 mAdc
350
2.8
— °C
312.5 °C/W
300 °C
Vdc
Vpk
mW
mW/°C
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
r
DS(on)
g
fs
Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
240 — Vdc
—
—
— ±100 nAdc
0.8 2.0 Vdc
1.0 — Adc
—
—
300 — mS
10
500
10
6.0
µAdc
Ω
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
VN2406L
f = 1.0 MHz)
R
L
150 Ω, R
G
Ω)
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
(VDD = 60 Vdc, ID = 0.4 A,
RL = 150 Ω, R
(TA = 25°C unless otherwise noted) (Continued)
=
= 25 Ω)
= 25
C
C
C
t
(on)
t
(off)
iss
oss
rss
t
(r)
t
(f)
— 125 pF
— 50 pF
— 20 pF
— 8.0 ns
— 8.0 ns
— 23 ns
— 34 ns
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Loading...