Motorola VN0300L Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by VN0300L/D
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current I
Pulsed Drain Current I
Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature TJ, T
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction to Ambient R
Maximum Lead Temperature for Soldering
Purposes, 1/16” from case for 10
seconds
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
STATIC CHARACTERISTICS
Drain–Source Breakdown Voltage
(VDS = 0, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TA = 125°C)
Gate–Body Leakage
(VDS = 0, VGS = ±30 V)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current
(VDS = VGS, ID = 1.0 mA)
Drain–Source On Resistance
(VGS = 5.0 V, ID = 0.3 A)
(VGS = 10 V, ID = 1.0 A)
Forward Transconductance
(VDS = 10 V, ID = 0.5 A)
1. Pulse Test; Pulse Width < 300 ms, Duty Cycle v 2.0%.
(1)
(1)
(1)
DSS
DGR
V
GS
V
GSM
D
DM
P
D
stg
θJA
T
L
= 25°C unless otherwise noted)
A
3 DRAIN
2
GATE
1 SOURCE
60 V
60 V
± 20
± 40
200 mA
500 mA
350
2.8
— °C
312.5 °C/W
300 °C
Vdc
Vpk
mW
mW/°C
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
r
DS(on)
g
fs
Motorola Preferred Device
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
30 — V
—
—
— ±100 nA
0.8 2.5 V
1.0 — A
—
—
200 — mS
10
500
3.3
1.2
µA
Ω
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
VN0300L
)
f = 1.0 MHz)
(
DD
,
D
,
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
(TA = 25°C unless otherwise noted) (Continued)
(VDS = 15 Vdc, VGS = 0,
f = 1.0 MHz
(VDD = 25 Vdc, ID = 1.0 A,
RL = 24 Ω, RG = 25 Ω)
C
iss
C
oss
C
rss
t
on
t
off
— 100 pF
— 95 pF
— 25 pF
— 30 ns
— 30 ns
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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