Motorola TPV7025 Datasheet
1
TPV7025MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal
matching of both input and output along with use of a push–pull package
configuration aids broadband amplifier designs.
Gold m etallized dice with d iffused emitter ballast resistors enhances
reliability, ruggedness and linearity.
• Band IV & V (470–860 MHz)
• 25 W — P
ref
@ –45 dB IMD
• 25 V — V
CC
• Push–Pull Package
• Gold Metallization for Reliability
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
28 Vdc
Collector–Base Voltage V
CBO
45 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–50 to +200 °C
Operating Case Temperature T
C
70 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (TC = 70°C) R
θJC
1.5 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage
(IC = 120 mA, IB = 0)
V
(BR)CEO
28 — — Vdc
Collector–Base Breakdown Voltage
(IC = 20 mA, IE = 0)
V
(BR)CBO
45 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 6.0 mA, IC = 0)
V
(BR)EBO
4.0 — — Vdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1.0 A, VCE = 20 V)
h
FE
10 — 60 —
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
C
ob
64 — 80 pF
NOTE: (continued)
1. Each transistor chip measured separately.
Order this document
by TPV7025/D
SEMICONDUCTOR TECHNICAL DATA
25 W, 470–860 MHz
UHF LINEAR
POWER TRANSISTOR
CASE 398–03, STYLE 1
(BMA–4)
Motorola, Inc. 1994
TPV7025
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic UnitMaxTypMinSymbol
FUNCTIONAL TESTS (2)
Common–Emitter Amplifier Power Gain
(VCE = 25 V, P
out
= 25 W, f = 860 MHz, ICQ = 3.2 A)
G
PE
9.0 — 10.5 dB
Load Mismatch
(VCE = 25 V, P
out
= 24 W, f = 860 MHz,
Load VSWR = ∞:1, All Phase Angles)
ψ
No Degradation in Output Power
Overdrive (f = 470 MHz, 2 tones, VCE = 25 V, IC = 3.2 A)
(No Degradation)
P
in
over
24 — — W
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 3.2 A, P
ref
= 25 W,
Vision Carrier = –8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
IMD
1
— — –45 dB
Cross Modulation Distortion
(P
ref
= 25 W, f = 860 MHz, ∆% Sound = (–7.0 dB),
Vision 0 – Peak)
X
MOD
— — 20 %
NOTE:
2. Both transistor chips operating in push–pull amplifier.
Figure 1. IMD versus Output Power Figure 2. IMD versus Frequency
–45
–55
–65
5 6.25 8 10 12.5 16 20 25 28
P
out
, OUTPUT POWER (WATTS)
IMD, INTERMODULATION DISTORTION (dB)
–48
–50
–52
500
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dB)
600 700 800
f = 860 MHz
VCE = 25 V
IC = 3.2 A
Tbp = 25
°
C
3 TONES: –8 dB, –7 dB, – 17 dB
P
out
= 20 W
VCE = 25 V
IC = 3.2 A
Tbp = 25
°
C
3 TONES: –8 dB, –7 dB, – 17 dB
TYPICAL CHARACTERISTICS
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