1
TPV695AMOTOROLA RF DEVICE DATA
The RF Line
Designed for driver and output stages in band IV and V TV transposers and
transmitter amplifiers. The TPV695A uses gold metallized die with diffused
emitter ballast resistors to enhance reliability, ruggedness and linearity.
• Band IV and V (470–860 MHz)
• 14 W — P
ref
@ –47 dB IMD
• 25 V — V
CC
• High Gain — 10 dB Min, Class A, f = 860 MHz
• Gold Metallization for Reliability
• Push–Pull Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
28 Vdc
Collector–Base Voltage V
CES
50 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
5.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
50
0.4
Watts
W/°C
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–50 to +200 °C
Operating Case Temperature Range T
C
–15 to +70 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.5 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V
(BR)CEO
28 — — Vdc
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V
(BR)CES
50 — — Vdc
Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0) V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current (VCB = 19 V, IE = 0) I
CBO
— — 15 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 A, VCE = 10 V) h
FE
20 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) C
ob
— 18 20 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, P
out
= 14 W, f = 860 MHz, IC = 2.0 x 900 mA)
G
PE
10 — — dB
Overdrive (no degradation)
(f = 470 MHz, VCE = 25 V, IC = 2.0 x 900 mA)
P
in
over
12.5 — — W
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 2.0 x 900 mA, P
ref
= 14 W,
Vision Carrier = –7.0 dB, Sound Carrier = –8.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
IMD
1
— –47 –46 dB