MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PZT2907AT1/D
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
•NPN Complement is PZT2222AT1
•The SOT-223 package can be soldered using wave or reflow
•SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of
damage to the die. |
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COLLECTOR |
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• Available in 12 mm tape and reel |
2,4 |
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Use PZT2907AT1 to order the 7 inch/1000 unit reel. |
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Use PZT2907AT3 to order the 13 inch/4000 unit reel. |
BASE 1 |
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EMITTER |
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted) |
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PZT2907AT1
Motorola Preferred Device
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
1 
2 
3
CASE 318E-04, STYLE 1
TO-261AA
Rating |
Symbol |
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Value |
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Unit |
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Collector-Emitter Voltage |
VCEO |
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± 60 |
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Vdc |
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Collector-Base Voltage |
VCBO |
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± 60 |
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Vdc |
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Emitter-Base Voltage |
VEBO |
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± 5.0 |
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Vdc |
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Collector Current |
IC |
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± 600 |
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mAdc |
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Total Power Dissipation @ T = 25°C(1) |
P |
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1.5 |
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Watts |
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A |
D |
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mW/°C |
Derate above 25°C |
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12 |
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Operating and Storage Temperature Range |
TJ, Tstg |
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± 65 to 150 |
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°C |
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THERMAL CHARACTERISTICS |
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Thermal Resistance Ð Junction-to-Ambient (surface mounted) |
RqJA |
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83.3 |
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°C/W |
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Lead Temperature for Soldering, 0.0625″ from case |
TL |
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260 |
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°C |
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Time in Solder Bath |
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10 |
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Sec |
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DEVICE MARKING |
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P2F |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
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Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector-Base Breakdown Voltage (IC = ±10 mAdc, IE = 0) |
V(BR)CBO |
± 60 |
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°Ð ° |
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Ð |
Vdc |
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) |
V(BR)CEO |
± 60 |
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Ð |
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Ð |
Vdc |
Emitter-Base Breakdown Voltage (IE = ±10 mAdc, IC = 0) |
V(BR)EBO |
± 5.0 |
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°Ð ° |
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Ð |
Vdc |
Collector-Base Cutoff Current (VCB = ±50 Vdc, IE = 0) |
ICBO |
Ð |
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°Ð ° |
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±10 |
nAdc |
Collector-Emitter Cutoff Current (VCE = ±30 Vdc, VBE = 0.5 Vdc) |
ICEX |
Ð |
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Ð |
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± 50 |
nAdc |
Base-Emitter Cutoff Current (VCE = ±30 Vdc, VBE = ±0.5 Vdc) |
IBEX |
Ð |
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Ð |
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± 50 |
nAdc |
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola, Inc. 1996
PZT2907AT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS(2) |
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DC Current Gain |
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hFE |
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Ð |
(IC = ±0.1 mAdc, VCE = ±10 Vdc) |
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75 |
Ð |
Ð |
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(IC = ±1.0 mAdc, VCE = ±10 Vdc) |
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100 |
Ð |
Ð |
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(IC = ±10 mAdc, VCE = ±10 Vdc) |
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100 |
Ð |
Ð |
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(IC = ±150 mAdc, VCE = ±10 Vdc) |
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100 |
Ð |
300 |
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(IC = ±500 mAdc, VCE = ±10 Vdc) |
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50 |
Ð |
Ð |
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Collector-Emitter Saturation Voltages |
VCE(sat) |
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Vdc |
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(IC = ±150 mAdc, IB = ±15 mAdc) |
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Ð |
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± 0.4 |
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(IC = ± 500 mAdc, IB = ± 50 mAdc) |
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Ð |
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±1.6 |
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Base-Emitter Saturation Voltages |
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VBE(sat) |
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Vdc |
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(IC = ±150 mAdc, IB = ±15 mAdc) |
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Ð |
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±1.3 |
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(IC = ±500 mAdc, IB = ±50 mAdc) |
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Ð |
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± 2.6 |
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DYNAMIC CHARACTERISTICS |
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Current-Gain Ð Bandwidth Product (I C = ±50 mAdc, VCE = ±20 Vdc, f = 100 MHz) |
fT |
200 |
Ð |
Ð |
MHz |
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Output Capacitance (VCB = ±10 Vdc, IE = 0, f = 1.0 MHz) |
Cc |
Ð |
Ð |
8.0 |
pF |
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Input Capacitance (VEB = ±2.0 Vdc, IC = 0, f = 1.0 MHz) |
Ce |
Ð |
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30 |
pF |
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SWITCHING TIMES |
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Turn-On Time |
(VCC = ±30 Vdc, IC = ±150 mAdc, |
ton |
Ð |
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45 |
ns |
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Delay Time |
td |
Ð |
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10 |
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I |
= ±15 mAdc) |
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B1 |
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Rise Time |
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tr |
Ð |
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40 |
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Turn-Off Time |
(VCC = ±6.0 Vdc, IC = ±150 mAdc, |
toff |
Ð |
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100 |
ns |
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Storage Time |
ts |
Ð |
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80 |
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I |
= I = ±15 mAdc) |
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B1 |
B2 |
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Fall Time |
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tf |
Ð |
Ð |
30 |
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2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle = 2.0%. |
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± 30 V |
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INPUT |
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200 |
INPUT |
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Zo = 50 Ω |
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Zo = 50 |
Ω |
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PRF = 150 Hz |
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PRF = 150 Hz |
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RISE TIME ≤ 2.0 ns |
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1.0 k |
TO OSCILLOSCOPE |
RISE TIME ≤ 2.0 ns |
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RISE TIME ≤ 5.0 ns |
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0 |
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0 |
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± 16 V |
50 |
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± 30 V |
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200 ns |
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200 ns |
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+15 V |
± 6.0 V |
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1.0 k |
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37 |
1.0 k |
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TO OSCILLOSCOPE |
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RISE TIME ≤ 5.0 ns |
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50 |
1N916 |
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Figure 1. Delay and Rise |
Figure 2. Storage and Fall |
Time Test Circuit |
Time Test Circuit |
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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