Motorola PZT2907AT1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This PNP S ilicon Epitaxial t ransistor is designed f or use in l inear a nd
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
• NPN Complement is PZT2222AT1
• The SOT-223 package can be soldered using wave or reflow
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
• Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Emitter Voltage V
CEO
–60 Vdc
Collector-Base Voltage V
CBO
–60 Vdc
Emitter-Base Voltage V
EBO
–5.0 Vdc
Collector Current I
C
–600 mAdc
Total Power Dissipation @ TA = 25°C
(1)
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Temperature Range TJ, T
stg
–65 to 150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted) R
θJA
83.3 °C/W
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath
T
L
260
10
°C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V
(BR)CBO
–60 °—° — Vdc
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V
(BR)CEO
–60 — — Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V
(BR)EBO
–5.0 °—° — Vdc
Collector-Base Cutoff Current (VCB = –50 Vdc, IE = 0) I
CBO
— °—° –10 nAdc
Collector-Emitter Cutoff Current (VCE = –30 Vdc, VBE = 0.5 Vdc) I
CEX
— — –50 nAdc
Base-Emitter Cutoff Current (VCE = –30 Vdc, VBE = –0.5 Vdc) I
BEX
— — –50 nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by PZT2907AT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR
2,4
BASE 1
3
EMITTER
REV 4
PZT2907AT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
(2)
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
h
FE
75
100
100
100
50
—
—
—
—
—
—
—
—
300
—
—
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = –50 mAdc)
V
CE(sat)
—
—
—
—
–0.4
–1.6
Vdc
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
V
BE(sat)
—
—
—
—
–1.3
–2.6
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) f
T
200 — — MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) C
c
— — 8.0 pF
Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) C
e
— — 30 pF
SWITCHING TIMES
Turn-On Time
t
on
— — 45 ns
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
I
= –15 mAdc)
t
d
— — 10
Rise Time
IB1 = –15 mAdc)
t
r
— — 40
Turn-Off Time
t
off
— — 100 ns
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
I
= I
= –15 mAdc)
t
s
— — 80
Fall Time
IB1 = IB2 = –15 mAdc)
t
f
— — 30
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.
INPUT
Zo = 50
Ω
PRF = 150 Hz
RISE TIME
≤
2.0 ns
0
1.0 k
50
– 16 V
200 ns
– 30 V
200
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
0
1.0 k
50
– 30 V
200 ns
– 6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V
1.0 k
1N916
INPUT
Zo = 50
Ω
PRF = 150 Hz
RISE TIME
≤
2.0 ns
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
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