Motorola PBF493RS Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–300 Vdc
Collector–Base Voltage V
CBO
–300 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V
(BR)CEO
–300 — Vdc
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V
(BR)CBO
–300 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V
(BR)EBO
–5.0 — Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
I
CBO
— –0.25 µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc)
I
EBO
— –20 nAdc
Collector Cutoff Current
(VCE = –10 Vdc)
I
CEO
— –250 nAdc
Order this document
by PBF493RS/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
(Replaces PBF493R/D)
PBF493RS
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc) PBF493RS
(IC = –1.0 mAdc, VCE = –10 Vdc) All Types
(IC = –30 mAdc, VCE = –10 Vdc) All Types
h
FE
40
40
25
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
V
CE(sat)
— –0.5 Vdc
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
V
BE(sat)
— –0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
f
T
50 — MHz
Output Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 6.0 pF
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