MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PBF259/D
High Voltage Transistors
NPN Silicon
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COLLECTOR |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
PBF259,S |
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Unit |
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Collector± Emitter Voltage |
VCEO |
300 |
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Vdc |
Collector± Base Voltage |
VCBO |
300 |
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Vdc |
Emitter± Base Voltage |
VEBO |
5.0 |
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Vdc |
Collector Current Ð Continuous |
IC |
500 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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Watts |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PBF259
PBF259S
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector± Emitter Breakdown Voltage(1) |
V(BR)CEO |
300 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
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Collector± Base Breakdown Voltage |
V(BR)CBO |
300 |
Ð |
Vdc |
(IC = 10 mAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
5.0 |
Ð |
Vdc |
(IE = 100 mAdc, IC = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
50 |
nAdc |
(VCB = 250 Vdc, IE = 0) |
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Emitter Cutoff Current |
IEBO |
Ð |
20 |
nAdc |
(VEB = 3.0 Vdc) |
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Collector Cutoff Current |
ICEO |
Ð |
50 |
nAdc |
(VCE = 10 Vdc) |
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1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. |
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Motorola, Inc. 1996
PBF259 PBF259S
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain(1) |
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hFE |
60 |
Ð |
Ð |
(IC = 20 mAdc, VCE = 10 Vdc) |
PBF259S |
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(IC = 1.0 mAdc, VCE = 10 Vdc) |
All Types |
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25 |
Ð |
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(IC = 30 mAdc, VCE = 10 Vdc) |
All Types |
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25 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 30 mAdc, IB = 1.5 mAdc) |
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Ð |
0.5 |
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(IC = 30 mAdc, IB = 60 mAdc |
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Ð |
1.0 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
40 |
Ð |
MHz |
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) |
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Output Capacitance |
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Cobo |
Ð |
3.0 |
pF |
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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