MOTOROLA P2N2907AZL1, P2N2907ARL1 Datasheet

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

–60 Vdc

Collector–Base Voltage V

CBO

–60 Vdc

Emitter–Base Voltage V

EBO

–5.0 Vdc

Collector Current — Continuous I

C

–600 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watts

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = –10 mAdc, IB = 0)

V

(BR)CEO

–60 — Vdc

Collector–Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

V

(BR)CBO

–60 — Vdc

Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V

(BR)EBO

–5.0 — Vdc

Collector Cutoff Current

(VCE = –30 Vdc, V

EB(off)

= –0.5 Vdc)

I

CEX

— –50 nAdc

Collector Cutoff Current

(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)

I

CBO

—
—

–0.01

–10

µAdc

Emitter Cutoff Current

(VEB = –3.0 Vdc)

I

EBO

— –10 nAdc

Collector Cutoff Current

(VCE = –10 V)

I

CEO

— –10 nAdc

Base Cutoff Current

(VCE = –30 Vdc, V

EB(off)

= –0.5 Vdc)

I

BEX

— –50 nAdc

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Order this document

by P2N2907A/D

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SEMICONDUCTOR TECHNICAL DATA

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CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR

1

2

BASE

3

EMITTER

P2N2907A

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)

(1)

(IC = –500 mAdc, VCE = –10 Vdc)

(1)

h

FE

75
100
100
100

50

—
—
—

300

—

—

Collector–Emitter Saturation Voltage

(1)

(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)

V

CE(sat)

—

—

–0.4
–1.6

Vdc

Base–Emitter Saturation Voltage

(1)

(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)

V

BE(sat)

—

—

–1.3
–2.6

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(1), (2)

(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)

f

T

200 — MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

C

obo

— 8.0 pF

Input Capacitance

(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)

C

ibo

— 30 pF

SWITCHING CHARACTERISTICS

Turn–On Time

t

on

— 50 ns

Delay Time

(VCC = –30 Vdc, IC = –150 mAdc,
I

= –15 mAdc) (Figures 1 and 5)

t

d

— 10 ns

Rise Time

IB1 = –15 mAdc) (Figures 1 and 5)

t

r

— 40 ns

Turn–Off Time

t

off

— 110 ns

Storage Time

(VCC = –6.0 Vdc, IC = –150 mAdc,
I

= I

= –15 mAdc) (Figure 2)

t

s

— 80 ns

Fall Time

IB1 = IB2 = –15 mAdc) (Figure 2)

t

f

— 30 ns

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

0

0

–16 V

200 ns

50

1.0 k

200

–30 V

TO OSCILLOSCOPE
RISE TIME

≤

5.0 ns

+15 V –6.0 V

1.0 k 37

50

1N916

1.0 k

200 ns

–30 V

TO OSCILLOSCOPE
RISE TIME

≤

5.0 ns

INPUT
Zo = 50

Ω

PRF = 150 PPS
RISE TIME

≤

2.0 ns

P.W. < 200 ns

INPUT
Zo = 50

Ω

PRF = 150 PPS
RISE TIME

≤

2.0 ns

P.W. < 200 ns

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

P2N2907A

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL CHARACTERISTICS

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

3.0

0.2
–0.1

TJ = 125°C

25°C

–55°C

VCE = –1.0 V
VCE = –10 V

h

FE

, NORMALIZED CURRENT GAIN

2.0

–0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

Figure 4. Collector Saturation Region

IB, BASE CURRENT (mA)

–0.4

–0.6

–0.8

–1.0

–0.2

V , COLLECTOR–EMITTER VOLTAGE (VOLTS)

0

CE

IC = –1.0 mA

–0.005

–10 mA

–0.01

–100 mA

–500 mA

–0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0

–2.0

–3.0

–5.0 –7.0 –10 –20

–30

–50

Figure 5. Turn–On Time

IC, COLLECTOR CURRENT

300

–5.0

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

–5.0

t, TIME (ns)

t, TIME (ns)

200

100

70
50

30
20

10

7.0

5.0

3.0
–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

t

r

2.0 V

td @ V

BE(off)

= 0 V

VCC = –30 V
IC/IB = 10
TJ = 25

°

C

500
300

100

70
50

30
20

10

7.0

5.0
–7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500

200

t

f

t

′

s

= ts – 1/8 t

f

VCC = –30 V
IC/IB = 10
IB1 = I

B2

TJ = 25

°

C

P2N2907A

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

10

0.01

Figure 8. Source Resistance Effects

Rs, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

f = 1.0 kHz

IC = –50 µA
–100

µ

A

–500

µ

A

–1.0 mA

Rs = OPTIMUM SOURCE RESISTANCE

8.0

6.0

4.0

2.0

0

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

10

8.0

6.0

4.0

2.0

0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

IC = –1.0 mA, Rs = 430

Ω

–500 µA, Rs = 560

Ω

–50 µA, Rs = 2.7 k

Ω

–100 µA, Rs = 1.6 k

Ω

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

30

Figure 10. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

C, CAPACITANCE (pF)

–0.1

2.0

Figure 11. “On” Voltage

IC, COLLECTOR CURRENT (mA)

–1.0

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

V

BE(on)

@ VCE = –10 V

R

q

VC

for V

CE(sat)

f

T

, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

COEFFICIENT (mV/

°

C)

20

10

7.0

5.0

3.0

–0.2

–0.3

–0.5

–1.0 –2.0 –3.0 –5.0 –10 –20 –30

400
300

200

100

80
60

40
30

20

–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000

–0.8

–0.6

–0.4

–0.2

0

–0.1 –0.2 –0.5

–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500

+0.5

0

–0.5

–1.0

–1.5

–2.0

–2.5

–0.1 –0.2 –0.5

–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500

C

eb

C

cb

VCE = –20 V
TJ = 25

°

C

R

q

VB

for V

BE

P2N2907A

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

F

B

K

G

H

SECTION X–X

C

V

D

N

N

X X

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

1

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

CASE 029–04

(TO–226AA)

ISSUE AD

P2N2907A

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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P2N2907A/D

*P2N2907A/D*

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