Motorola MSD42WT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MSD42WT1/D
This NPN Silicon Planar Transistor is designed for general purpose amplifier
applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current — Continuous I
DEVICE MARKING
MSD42WT1 = H1D
THERMAL CHARACTERISTICS
Power Dissipation
Junction Temperature T
Storage Temperature Range T
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V
Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V
Emitter-Base Breakdown Voltage (IE = 100 µAdc, IE = 0) V
Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) I
Emitter–Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) I
DC Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
Collector-Emitter Saturation Voltage
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
(TA = 25°C)
Rating
Rating Symbol Max Unit
(1)
Characteristic Symbol Min Max Unit
(2)
(2)
(IC = 200 mAdc, IB = 2.0 mAdc) V
Symbol Value Unit
(BR)CBO
(BR)CEO
(BR)EBO
C
P
D
J
stg
300 Vdc
300 Vdc
6.0 Vdc
150 mAdc
150 mW
150 °C
–55 ~ +150 °C
(BR)CEO
(BR)CBO
(BR)EBO
CBO
EBO
h
FE1
h
FE2
CE(sat)
Motorola Preferred Devices
NPN GENERAL PURPOSE
HIGH VOLTAGE
TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 419–02, STYLE 3
SC–70/SOT–323
COLLECTOR
3
1
BASE2EMITTER
300 — Vdc
300 — Vdc
6.0 — Vdc
— 0.1 µA
— 0.1 µA
25
40
— 0.5 Vdc
—
—
—
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MSD42WT1
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.025
0.65
0.035
0.9
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a function
of the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
ture of the die, R
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet, PD can be
calculated as follows.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
, the maximum rated junction tempera-
J(max)
, the thermal resistance from the device
θJA
PD =
T
J(max)
R
θJA
– T
A
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.075
1.9
0.028
0.7
inches
mm
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 150 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a power dissipation of 300 milliwatts can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
2
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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