Motorola MRW54001 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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by MRW54001/D

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. . . designed primarily for large–signal output and driver amplifier stages in the

1.0 to 4.0 GHz frequency range.

• Designed for Class A or AB, Common–Emitter Linear Power Amplifiers

• Specified 20 Volt, 2.0 GHz Characteristics:

Output Power — 0.5 Watt
Power Gain — 10 to 1 1 dB

• 100% Tested for Load Mismatch at All Phase Angles with ∞:1 VSWR

• Gold Metallization for Improved Reliability

• Diffused Ballast Resistors

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Operating Junction Temperature T
Storage Temperature Range T

CEO
CES
EBO

J

stg

22 Vdc
50 Vdc

3.5 Vdc

200 °C

–65 to +200 °C



10–11 dB

1.0–4.0 GHz

0.5 WATT

MICROWAVE LINEAR

POWER TRANSISTORS

CASE 400–01, STYLE 1

(TW200)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 10 mA, IB = 0)

Collector–Emitter Breakdown Voltage

(IC = 10 mA, VBE = 0)

Collector–Base Breakdown Voltage

(IC = 1.0 mA, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 0.25 mA, IC = 0)

Collector Cutoff Current

(VCB = 28 V, IE = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 5.0 V)

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 28 V, IE = 0, f = 1.0 MHz)

REV 1

θJC

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

C

ob

40 °C/W

22 — — Vdc

50 — — Vdc

45 — — Vdc

3.5 — — Vdc

— — 0.25 mAdc

20 — 120 —

— — 3.5 pF

(continued)

 Motorola, Inc. 1997

MRW54001MOTOROLA RF DEVICE DATA

2–1

ELECTRICAL CHARACTERISTICS — continued

Characteristic Symbol Min Typ Max Unit

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCE = 20 V, P

Load Mismatch

(VCE = 20 V, IE = 120 mA, P

Load VSWR = ∞:1, All Phase Angles)
Cutoff Frequency (VCE = 20 V, IE = 120 mA) f
Gain Linearity

(VCE = 20 V, IE = 120 mA, f = 2.0 GHz, Po1 = 0.5 W, Po2 = 0.5 mW)
Intermodulation Distortion, 3rd Order

(VCE = 20 V, IE = 120 mA, Po (PEP) = 0.5 W,

Tones at 2.0 GHz and 2.005 GHz)

= 0.5 W, f = 2.0 GHz, IE = 120 mA)

out

= 0.5 W, f = 2.0 GHz,

out

TYPICAL CHARACTERISTICS

G

PE

ψ

τ

L

G

IMD — –30 — dB

10 — — dB

No Degradation in Output Power

4.0 4.5 — GHz
—

—

—
—

–0.2
+1.0

dB

1.25

1

0.75

0.5

0.25

out

P , POWER OUTPUT (WATTS)

0

0

Figure 1. 1.0 dB Compression Point versus

30

24

, GAIN (dB)

18

PE

G

12

6

50

IE, EMITTER CURRENT (mA)

Emitter Current

54001

Gp @ Po = 0.5 W

VCE = 20 V

15 V

10 V

f = 2 GHz
T

100 150 200 250

P

o

VCE = 20 V
IE = 120 mA
T

FLANGE

= 25

°

C

FLANGE

= 25

°

C

0.6

0.5

0.4

0.3

0.2

0.1

12

11

10

9

, UNCOMPRESSED GAIN (dB)

8

PE

G

0

0

25

Figure 2. Gain versus Emitter Current

500

400

300

200

, COLLECTOR CURRENT (mA)

100

out

C

P , POWER OUTPUT (WATTS)

I

VCE = 20 V

f = 2 GHz
T

FLANGE

50 75 100 125

IE, EMITTER CURRENT (mA)

T

FLANGE

≈

BIAS FOR BEST GAIN

15 V

10 V

= 25

= 25°C

11

10

9

8

7

°

C

0

0.1

0.5

12345

f, FREQUENCY (GHz)

Figure 3. Gain and 1.0 dB Compressed Power

versus Frequency

MRW54001
2–2

0

0

0 5 10 15 25

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

20

22

Figure 4. DC Safe Operating Area

MOTOROLA RF DEVICE DATA