Motorola MRFIC2002 Datasheet

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SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
   
The MRFIC2002 is a double-balanced, active mixer designed for transmitters operating in the 800 MHz to 1.0 GHz frequency range. The design utilizes Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior performance in a cost effective monolithic device. Applications for the MRFIC2002 include CT1 and CT2 cordless telephones, GSM, remote controls, video and audio short range links, low cost cellular radios, and ISM band transmitters. A power down control is provided to minimize current drain with minimum recovery/turn-on time.
Conversion Gain = 10 dB (Typ)
Supply Current = 5.5 mA (Typ)
Power Down Supply Current = 2.0 µA (Max)
LO-RF Isolation = 25 dB (Typ)
Low LO Drive Required = –10 dBm (Typ)
LO Impedance Insensitive to Power Down
No Matching Required for RF OUT Port
All Ports are Single Ended
Order MRFIC2002R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 12 mm, 13 inch Reel.
Device Marking = M2002
Order this document
by MRFIC2002/D
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900 MHz TX-MIXER
SILICON MONOLITHIC
INTEGRATED CIRCUIT
CASE 751-05
(SO-8)
ABSOLUTE MAXIMUM RATINGS
Supply Voltage V Control Voltages ENABLE, V Input Power, LO and IF Ports PLO, P Operating Ambient Temperature T Storage Temperature T
(TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
IF IN
1 8
(1)
V
RAMP
ENABLE
2 7
GND
BIAS
3 6
CNTL
4 5
CC
A
stg
RAMP IF
LO IN
V
CC
GND
RF OUT
5.5 Vdc
5.0 Vdc
+10 dBm
–35 to +85 °C
–65 to +150 °C
REV 2
Motorola, Inc. 1997
(1) For CT2 applications, apply ramp voltage provided in MRFIC2004. For non-CT2, leave open circuited.
Pin Connections and Functional Block Diagram
MRFIC2002MOTOROLA RF DEVICE DATA
1
RECOMMENDED OPERATING RANGES
Parameter Symbol Value Unit
Supply Voltage Range V Control Voltage Ranges ENABLE, V RF Port Frequency Range f IF Port Frequency Range f
ELECTRICAL CHARACTERISTICS (V
GHz, RF @ 900 MHz, TA = 25°C unless otherwise noted)
Characteristic (2)
Supply Current: On-Mode Supply Current: Off-Mode (Enable < 1.0 V)
Enable Response Time 1.0 µs Conversion Gain 8.0 10 12 dB Single Sideband Noise Figure 10 dB Output Power at 1.0 dB Gain Compression –18 dBm Output Power at Saturation –16 –14 dBm LO-RF Isolation (1.0 GHz) 25 dB LO-IF Isolation (1.0 GHz) 65 dB IF-RF Isolation (100 MHz) 18 dB IF-LO Isolation (100 MHz) 50 dB
NOTES:
1. For CT2 applications, apply ramp voltage provided in MRFIC2004. For non-CT2, leave open circuited.
2. All Electrical Characteristics are measured in test circuit schematic as shown in Figure 1.
, Enable = 3.0 V and V
CC
Ramp
(1)
Open Circuited, PLO = –7.0 dBm, IF @ 100 MHz, LO @ 1.0
CC
RAMP
RF
IF
Min Typ Max Unit
— —
2.7 to 5.0 Vdc 0 to 5.0 Vdc
500 to 1000 MHz
0 (dc) to 250 MHz
5.5
0.1
7.0
2.0
mA
µA
IF IN
50
C1 L1 L2
C2
V
+
*
RAMP
ENABLE
C1, C3, C6 — 1000 pF Chip Capacitor C2 — 6.8 pF Chip Capacitor C4 — 3.9 pF Chip Capacitor C5 — 100 pF Chip Capacitor C7 — 5.6 pF Chip Capacitor L1 — 270 nH Chip Inductor
+ –
C3
1
2
3
4
8
7
D.U.T.
6
5
L2 — 10 nH Chip Inductor L3 — 390 nH Chip Inductor RF Connectors — SMA Type Board Material — Glass/Epoxy εr = 4.5, Dielectric Thickness = 0.014 (0.36 mm)
Figure 1. T est Circuit
Configuration
C4
L3
C6C5
C7
+ –V
CC
LO IN
50
RF OUT
50
MRFIC2002 2
MOTOROLA RF DEVICE DATA
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