SEMICONDUCTOR TECHNICAL DATA
The MRFIC Line
The MRFIC2001 is an integrated downconverter designed for receivers
operating in the 800 MHz to 1.0 GHz frequency range. The design utilizes
Motorola’s advanced MOSAIC 3 silicon bipolar RF process to yield superior
performance in a cost effective monolithic device. Applications for the
MRFIC2001 include CT-1 and CT-2 cordless telephones, remote controls,
video and audio short range links, low cost cellular radios, and ISM band
receivers. A power down control is provided to minimize current drain with
minimum recovery/turn-on time.
• Conversion Gain = 23 dB (Typ)
• Supply Current = 4.7 mA (Typ)
• Power Down Supply Current = 2.0 µA (Max)
• Low LO Drive = –10 dBm (Typ)
• LO Impedance Insensitive to Power Down
• No Image Filtering Required
• No Matching Required for RF IN Port
• All Ports are Single Ended
• Order MRFIC2001R2 for Tape and Reel.
R2 suffix = 2,500 Units per 12 mm, 13 inch Reel.
• Device Marking = M2001
Order this document
by MRFIC2001/D
900 MHz
DOWNCONVERTER
LNA/MIXER
SILICON MONOLITHIC
INTEGRATED CIRCUIT
CASE 751-05
(SO-8)
ABSOLUTE MAXIMUM RATINGS
Supply Voltage V
Control Voltage ENABLE 5.0 Vdc
Input Power, RF and LO Ports PRF, P
Operating Ambient Temperature T
Storage Temperature T
(TA = 25°C unless otherwise noted)
Rating
RF IN
GND
GND
LO IN
1
2
3
4
LNA
Symbol Value Unit
CC
A
stg
LO
8
7
6
5
ENABLE
V
CC
GND
IF OUT/V
5.5 Vdc
+10 dBm
– 35 to + 85 °C
– 65 to +150 °C
CC
REV 2
Motorola, Inc. 1994
Pin Connections and Functional Block Diagram
MRFIC2001MOTOROLA RF DEVICE DATA
1
RECOMMENDED OPERATING RANGES
Parameter Symbol Value Unit
Supply Voltage Range V
Control Voltage Range ENABLE 0 to 5.0 Vdc
RF Port Frequency Range f
IF Port Frequency Range f
CC
RF
IF
2.7 to 5.0 Vdc
500 to 1000 MHz
0 (dc) to 250 MHz
ELECTRICAL CHARACTERISTICS (V
IF @ 100 MHz unless otherwise noted)
Characteristic (1)
Supply Current: On-Mode — 4.7 5.5 mA
Supply Current: Off-Mode (ENABLE < 1.0 Volts) — 0.1 2.0 µA
ENABLE Response Time — 1.0 — µs
Conversion Gain 20 23 26 dB
Input Return Loss (RF IN Port) — 13 — dB
Single Sideband Noise Figure — 5.5 — dB
Input 3rd Order Intercept Point –26 – 22.5 — dBm
Output Power at 1.0 dB Gain Compression — –10 — dBm
LO – RF Isolation (1.0 GHz) — 37 — dB
LO – IF Isolation (1.0 GHz) — 33 — dB
RF – IF Isolation (900 MHz) — 4.0 — dB
RF – LO Isolation (900 MHz) — 19 — dB
NOTE:
1. All Electrical Characteristics measured in test circuit schematic shown in Figure 1 below:
RF IN
Ω
50
LO IN
Ω
50
C1
C2
, ENABLE = 3.0 V, TA = 25°C, RF @ 900 MHz, LO @ 1.0 GHz, PLO = –7.0 dBm,
CC
Min Typ Max Unit
C3
+
ENABLE
–
1
2
D.U.T.
3
L1
4
8
7
L3
C5C4
6
C6
5
+
–
IF OUT
50
V
CC
Ω
MRFIC2001
2
C1, C2, C4, C7 — 100 pF Chip Capacitor
C3, C5, C8 — 1000 pF Chip Capacitor
C6 — 6.8 pF Chip Capacitor
L1 — 8.2 nH Chip Inductor
L2 — 270 nH Chip Inductor
Figure 1. Test Circuit Configuration
L2
C7 C8
L3 — 150 nH Chip Inductor
RF Connectors — SMA Type
Board Material — Epoxy/Glass εr = 4.5,
Dielectric Thickness = 0.014″ (0.36 mm)
MOTOROLA RF DEVICE DATA
+
V
CC
–