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MRF2000–5LMOTOROLA RF DEVICE DATA
The RF Line
Designed primarily for wideband, large signal output and driver amplifier
stages in the 1.0 to 2.0 GHz frequency range.
• Designed for Class A or AB, Common Emitter Power Amplifiers
• Specified 20 Volt, 2.0 GHz Characteristic Power Gain —
7.0 dB Min @ 5.0 W P
out
• Built In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
22 Vdc
Collector–Base Voltage V
CES
50 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Collector Current — Continuous I
C
2.0 Adc
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
– 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case, DC R
θJC
(DC) 12 °C/W
Thermal Resistance, Junction to Case, RF R
θJC
(RF) 10 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mA, IC = 0)
V
(BR)CEO
22 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mA, VBE = 0)
V
(BR)CES
50 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 1.25 mA, IC = 0)
V
(BR)EBO
3.5 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mA, RBE = 10 Ohms)
V
(BR)CER
35 — — Vdc
Collector Cutoff Current
(VCE = 20 V, IE = 0)
I
CBO
— — 1.25 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 A, VCE = 5.0 V)
h
FE
20 35 100 —
(continued)